Electrostatic field limits and charge threshold for field-induced damage to voltage susceptible devices

Jaakko Paasi (Corresponding Author), Hannu Salmela, Jeremy Smallwood

    Research output: Contribution to journalArticleScientificpeer-review

    6 Citations (Scopus)

    Abstract

    We have studied electrostatic field and charge threshold limits for damage to MOSFET devices in order to understand the ESD damage risks during handling in electronics production and assembly processes. The study covers both field-induced charged device model (CDM) and charged board model (CBM) cases. The charging electrostatic field for failure can be even two orders of magnitude lower for a device on a board than at component level. The charge level for failure remains approximately constant. Our results show that charge threshold for failure would serve as a good guide for ESD risks of voltage susceptible MOSFETs as discrete components and when assembled to PWBs.
    Original languageEnglish
    Pages (from-to)128-136
    Number of pages9
    JournalJournal of Electrostatics
    Volume64
    Issue number2
    DOIs
    Publication statusPublished - 2006
    MoE publication typeA1 Journal article-refereed

    Keywords

    • electrostatic discharge
    • ESD
    • MOSFET devices
    • device failures
    • charge threshold
    • gate-breakdown
    • field-induced

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