Electrostatic field limits and charge threshold for field-induced damage to voltage susceptible devices

Jaakko Paasi (Corresponding Author), Hannu Salmela, Jeremy Smallwood

    Research output: Contribution to journalArticleScientificpeer-review

    6 Citations (Scopus)

    Abstract

    We have studied electrostatic field and charge threshold limits for damage to MOSFET devices in order to understand the ESD damage risks during handling in electronics production and assembly processes. The study covers both field-induced charged device model (CDM) and charged board model (CBM) cases. The charging electrostatic field for failure can be even two orders of magnitude lower for a device on a board than at component level. The charge level for failure remains approximately constant. Our results show that charge threshold for failure would serve as a good guide for ESD risks of voltage susceptible MOSFETs as discrete components and when assembled to PWBs.
    Original languageEnglish
    Pages (from-to)128-136
    Number of pages9
    JournalJournal of Electrostatics
    Volume64
    Issue number2
    DOIs
    Publication statusPublished - 2006
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Static Electricity
    Electric fields
    damage
    Equipment and Supplies
    thresholds
    electric fields
    Electric potential
    MOSFET devices
    electric potential
    field effect transistors
    electrostatic charge
    Electronic equipment
    charging
    assembly
    electronics

    Keywords

    • electrostatic discharge
    • ESD
    • MOSFET devices
    • device failures
    • charge threshold
    • gate-breakdown
    • field-induced

    Cite this

    @article{654ea43c6e034dc48a4934b5aba8c229,
    title = "Electrostatic field limits and charge threshold for field-induced damage to voltage susceptible devices",
    abstract = "We have studied electrostatic field and charge threshold limits for damage to MOSFET devices in order to understand the ESD damage risks during handling in electronics production and assembly processes. The study covers both field-induced charged device model (CDM) and charged board model (CBM) cases. The charging electrostatic field for failure can be even two orders of magnitude lower for a device on a board than at component level. The charge level for failure remains approximately constant. Our results show that charge threshold for failure would serve as a good guide for ESD risks of voltage susceptible MOSFETs as discrete components and when assembled to PWBs.",
    keywords = "electrostatic discharge, ESD, MOSFET devices, device failures, charge threshold, gate-breakdown, field-induced",
    author = "Jaakko Paasi and Hannu Salmela and Jeremy Smallwood",
    note = "Project code: G2SU00220",
    year = "2006",
    doi = "10.1016/j.elstat.2005.03.089",
    language = "English",
    volume = "64",
    pages = "128--136",
    journal = "Journal of Electrostatics",
    issn = "0304-3886",
    publisher = "Elsevier",
    number = "2",

    }

    Electrostatic field limits and charge threshold for field-induced damage to voltage susceptible devices. / Paasi, Jaakko (Corresponding Author); Salmela, Hannu; Smallwood, Jeremy.

    In: Journal of Electrostatics, Vol. 64, No. 2, 2006, p. 128-136.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Electrostatic field limits and charge threshold for field-induced damage to voltage susceptible devices

    AU - Paasi, Jaakko

    AU - Salmela, Hannu

    AU - Smallwood, Jeremy

    N1 - Project code: G2SU00220

    PY - 2006

    Y1 - 2006

    N2 - We have studied electrostatic field and charge threshold limits for damage to MOSFET devices in order to understand the ESD damage risks during handling in electronics production and assembly processes. The study covers both field-induced charged device model (CDM) and charged board model (CBM) cases. The charging electrostatic field for failure can be even two orders of magnitude lower for a device on a board than at component level. The charge level for failure remains approximately constant. Our results show that charge threshold for failure would serve as a good guide for ESD risks of voltage susceptible MOSFETs as discrete components and when assembled to PWBs.

    AB - We have studied electrostatic field and charge threshold limits for damage to MOSFET devices in order to understand the ESD damage risks during handling in electronics production and assembly processes. The study covers both field-induced charged device model (CDM) and charged board model (CBM) cases. The charging electrostatic field for failure can be even two orders of magnitude lower for a device on a board than at component level. The charge level for failure remains approximately constant. Our results show that charge threshold for failure would serve as a good guide for ESD risks of voltage susceptible MOSFETs as discrete components and when assembled to PWBs.

    KW - electrostatic discharge

    KW - ESD

    KW - MOSFET devices

    KW - device failures

    KW - charge threshold

    KW - gate-breakdown

    KW - field-induced

    U2 - 10.1016/j.elstat.2005.03.089

    DO - 10.1016/j.elstat.2005.03.089

    M3 - Article

    VL - 64

    SP - 128

    EP - 136

    JO - Journal of Electrostatics

    JF - Journal of Electrostatics

    SN - 0304-3886

    IS - 2

    ER -