Electrostatic field limits and charge threshold for field-induced damage to voltage susceptible devices

Jaakko Paasi (Corresponding Author), Hannu Salmela, Jeremy Smallwood

Research output: Contribution to journalArticleScientificpeer-review

6 Citations (Scopus)

Abstract

We have studied electrostatic field and charge threshold limits for damage to MOSFET devices in order to understand the ESD damage risks during handling in electronics production and assembly processes. The study covers both field-induced charged device model (CDM) and charged board model (CBM) cases. The charging electrostatic field for failure can be even two orders of magnitude lower for a device on a board than at component level. The charge level for failure remains approximately constant. Our results show that charge threshold for failure would serve as a good guide for ESD risks of voltage susceptible MOSFETs as discrete components and when assembled to PWBs.
Original languageEnglish
Pages (from-to)128-136
Number of pages9
JournalJournal of Electrostatics
Volume64
Issue number2
DOIs
Publication statusPublished - 2006
MoE publication typeA1 Journal article-refereed

Fingerprint

Static Electricity
Electric fields
damage
Equipment and Supplies
thresholds
electric fields
Electric potential
MOSFET devices
electric potential
field effect transistors
electrostatic charge
Electronic equipment
charging
assembly
electronics

Keywords

  • electrostatic discharge
  • ESD
  • MOSFET devices
  • device failures
  • charge threshold
  • gate-breakdown
  • field-induced

Cite this

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title = "Electrostatic field limits and charge threshold for field-induced damage to voltage susceptible devices",
abstract = "We have studied electrostatic field and charge threshold limits for damage to MOSFET devices in order to understand the ESD damage risks during handling in electronics production and assembly processes. The study covers both field-induced charged device model (CDM) and charged board model (CBM) cases. The charging electrostatic field for failure can be even two orders of magnitude lower for a device on a board than at component level. The charge level for failure remains approximately constant. Our results show that charge threshold for failure would serve as a good guide for ESD risks of voltage susceptible MOSFETs as discrete components and when assembled to PWBs.",
keywords = "electrostatic discharge, ESD, MOSFET devices, device failures, charge threshold, gate-breakdown, field-induced",
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Electrostatic field limits and charge threshold for field-induced damage to voltage susceptible devices. / Paasi, Jaakko (Corresponding Author); Salmela, Hannu; Smallwood, Jeremy.

In: Journal of Electrostatics, Vol. 64, No. 2, 2006, p. 128-136.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Electrostatic field limits and charge threshold for field-induced damage to voltage susceptible devices

AU - Paasi, Jaakko

AU - Salmela, Hannu

AU - Smallwood, Jeremy

N1 - Project code: G2SU00220

PY - 2006

Y1 - 2006

N2 - We have studied electrostatic field and charge threshold limits for damage to MOSFET devices in order to understand the ESD damage risks during handling in electronics production and assembly processes. The study covers both field-induced charged device model (CDM) and charged board model (CBM) cases. The charging electrostatic field for failure can be even two orders of magnitude lower for a device on a board than at component level. The charge level for failure remains approximately constant. Our results show that charge threshold for failure would serve as a good guide for ESD risks of voltage susceptible MOSFETs as discrete components and when assembled to PWBs.

AB - We have studied electrostatic field and charge threshold limits for damage to MOSFET devices in order to understand the ESD damage risks during handling in electronics production and assembly processes. The study covers both field-induced charged device model (CDM) and charged board model (CBM) cases. The charging electrostatic field for failure can be even two orders of magnitude lower for a device on a board than at component level. The charge level for failure remains approximately constant. Our results show that charge threshold for failure would serve as a good guide for ESD risks of voltage susceptible MOSFETs as discrete components and when assembled to PWBs.

KW - electrostatic discharge

KW - ESD

KW - MOSFET devices

KW - device failures

KW - charge threshold

KW - gate-breakdown

KW - field-induced

U2 - 10.1016/j.elstat.2005.03.089

DO - 10.1016/j.elstat.2005.03.089

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VL - 64

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JO - Journal of Electrostatics

JF - Journal of Electrostatics

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