Electrostatic field limits and charge threshold for field induced damage to voltage susceptible devices

Jaakko Paasi, Hannu Salmela, Jeremy Smallwood

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    3 Citations (Scopus)

    Abstract

    We have studied electrostatic field and charge threshold limits for damage to MOSFET devices in order to understand the ESD damage risks during handling in electronics production and assembly processes. The study covers both field induced charged device model (CDM) and charged board model (CBM) cases. The charging electrostatic field for failure can be even two orders of magnitude lower for a device on a board than at component level. The charge level for failure remains approximately constant. Our results show that charge threshold for failure would serve as a good guide for ESD risks of voltage susceptible MOSFETs as discrete components and when assembled to PWBs.
    Original languageEnglish
    Title of host publication2004 Electrical Overstress/Electrostatic Discharge Symposium Proceedings
    PublisherIEEE Institute of Electrical and Electronic Engineers
    Pages229-237
    ISBN (Electronic)978-1-58537-063-4
    ISBN (Print)1-58537-063-0
    DOIs
    Publication statusPublished - 2004
    MoE publication typeA4 Article in a conference publication
    Event26th Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2004 - Grapevine, United States
    Duration: 19 Sep 200423 Sep 2004

    Conference

    Conference26th Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2004
    CountryUnited States
    CityGrapevine
    Period19/09/0423/09/04

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  • Cite this

    Paasi, J., Salmela, H., & Smallwood, J. (2004). Electrostatic field limits and charge threshold for field induced damage to voltage susceptible devices. In 2004 Electrical Overstress/Electrostatic Discharge Symposium Proceedings (pp. 229-237). IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/EOSESD.2004.5272605