Electrostatic field limits and charge threshold for field induced damage to voltage susceptible devices

Jaakko Paasi; Hannu Salmela; Jeremy Smallwood

doi:10.1109/EOSESD.2004.5272605

Electrostatic field limits and charge threshold for field induced damage to voltage susceptible devices

Jaakko Paasi, Hannu Salmela, Jeremy Smallwood

Electrostatic Solutions Ltd

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

4 Citations (Scopus)

Abstract

We have studied electrostatic field and charge threshold limits for damage to MOSFET devices in order to understand the ESD damage risks during handling in electronics production and assembly processes. The study covers both field induced charged device model (CDM) and charged board model (CBM) cases. The charging electrostatic field for failure can be even two orders of magnitude lower for a device on a board than at component level. The charge level for failure remains approximately constant. Our results show that charge threshold for failure would serve as a good guide for ESD risks of voltage susceptible MOSFETs as discrete components and when assembled to PWBs.

Original language	English
Title of host publication	2004 Electrical Overstress/Electrostatic Discharge Symposium Proceedings
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	229-237
ISBN (Electronic)	978-1-58537-063-4
ISBN (Print)	1-58537-063-0
DOIs	https://doi.org/10.1109/EOSESD.2004.5272605
Publication status	Published - 2004
MoE publication type	A4 Article in a conference publication
Event	26th Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2004 - Grapevine, United States Duration: 19 Sept 2004 → 23 Sept 2004

Conference

Conference	26th Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2004
Country/Territory	United States
City	Grapevine
Period	19/09/04 → 23/09/04

Access to Document

10.1109/EOSESD.2004.5272605

Cite this

@inproceedings{8c5acb85e85c4e8bb8f8743ef1c4a99e,

title = "Electrostatic field limits and charge threshold for field induced damage to voltage susceptible devices",

abstract = "We have studied electrostatic field and charge threshold limits for damage to MOSFET devices in order to understand the ESD damage risks during handling in electronics production and assembly processes. The study covers both field induced charged device model (CDM) and charged board model (CBM) cases. The charging electrostatic field for failure can be even two orders of magnitude lower for a device on a board than at component level. The charge level for failure remains approximately constant. Our results show that charge threshold for failure would serve as a good guide for ESD risks of voltage susceptible MOSFETs as discrete components and when assembled to PWBs.",

author = "Jaakko Paasi and Hannu Salmela and Jeremy Smallwood",

note = "Project code: G2SU00220; 26th Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2004 ; Conference date: 19-09-2004 Through 23-09-2004",

year = "2004",

doi = "10.1109/EOSESD.2004.5272605",

language = "English",

isbn = "1-58537-063-0",

pages = "229--237",

booktitle = "2004 Electrical Overstress/Electrostatic Discharge Symposium Proceedings",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

}

Paasi, J , Salmela, H & Smallwood, J 2004, Electrostatic field limits and charge threshold for field induced damage to voltage susceptible devices. in 2004 Electrical Overstress/Electrostatic Discharge Symposium Proceedings. IEEE Institute of Electrical and Electronic Engineers, pp. 229-237, 26th Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2004, Grapevine, Texas, United States, 19/09/04. https://doi.org/10.1109/EOSESD.2004.5272605

Electrostatic field limits and charge threshold for field induced damage to voltage susceptible devices. / Paasi, Jaakko ; Salmela, Hannu; Smallwood, Jeremy.
2004 Electrical Overstress/Electrostatic Discharge Symposium Proceedings. IEEE Institute of Electrical and Electronic Engineers, 2004. p. 229-237.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Electrostatic field limits and charge threshold for field induced damage to voltage susceptible devices

AU - Paasi, Jaakko

AU - Salmela, Hannu

AU - Smallwood, Jeremy

N1 - Project code: G2SU00220

PY - 2004

Y1 - 2004

N2 - We have studied electrostatic field and charge threshold limits for damage to MOSFET devices in order to understand the ESD damage risks during handling in electronics production and assembly processes. The study covers both field induced charged device model (CDM) and charged board model (CBM) cases. The charging electrostatic field for failure can be even two orders of magnitude lower for a device on a board than at component level. The charge level for failure remains approximately constant. Our results show that charge threshold for failure would serve as a good guide for ESD risks of voltage susceptible MOSFETs as discrete components and when assembled to PWBs.

AB - We have studied electrostatic field and charge threshold limits for damage to MOSFET devices in order to understand the ESD damage risks during handling in electronics production and assembly processes. The study covers both field induced charged device model (CDM) and charged board model (CBM) cases. The charging electrostatic field for failure can be even two orders of magnitude lower for a device on a board than at component level. The charge level for failure remains approximately constant. Our results show that charge threshold for failure would serve as a good guide for ESD risks of voltage susceptible MOSFETs as discrete components and when assembled to PWBs.

U2 - 10.1109/EOSESD.2004.5272605

DO - 10.1109/EOSESD.2004.5272605

M3 - Conference article in proceedings

SN - 1-58537-063-0

SP - 229

EP - 237

BT - 2004 Electrical Overstress/Electrostatic Discharge Symposium Proceedings

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - 26th Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2004

Y2 - 19 September 2004 through 23 September 2004

ER -

Electrostatic field limits and charge threshold for field induced damage to voltage susceptible devices

Abstract

Conference

Access to Document

Fingerprint

Cite this