Electrostatic field limits and charge threshold for field induced damage to voltage susceptible devices

Keyphrases

• Electrostatic Field 100%
• Field-induced 100%
• Induced Damage 100%
• Production Process 33%
• Assembly Process 33%
• Order of Magnitude 33%
• Component Level 33%
• Charging Level 33%
• Electronics Production 33%
• Discrete Components 33%
• MOSFET 33%
• Electrostatic Charge 33%
• Damage Risk 33%
• MOSFET Device 33%
• Board Model 33%
• Electronics Assembly 33%
• ESD Damage 33%
• Charged Device Model 33%

INIS

• devices 100%
• voltage 100%
• charges 100%
• damage 100%
• electrostatics 100%
• failures 75%
• levels 50%
• risks 50%
• mosfet 50%
• production 25%

Engineering

• Induced Damage 100%
• Electric Field 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 66%
• Component Level 33%
• Discrete Component 33%
• Threshold Limit 33%
• Assembly Process 33%
• Damage Risk 33%
• Electrostatic Charge 33%