Emission and absorption entropy generation in semiconductors

K. Reck, Aapo Varpula, Mika Prunnila, O. Hansen

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientific

    32 Citations (Scopus)

    Abstract

    While emission and absorption entropy generation is well known in black bodies, it has not previously been studied in semiconductors, even though semiconductors are widely used for solar light absorption in modern solar cells [1]. We present an analysis of the entropy generation in semiconductor materials due to emission and absorption of electromagnetic radiation. It is shown that the emission and absorption entropy generation reduces the fundamental limit on the efficiency of any semiconductor solar cell even further than the Landsberg limit. The results are derived from purely thermodynamical considerations and are thus of general validity. A modified Landsberg efficiency and numerical results are given.
    Original languageEnglish
    Title of host publicationProceedings of the 28th European Photovoltaic Solar Energy Conference and Exhibition
    Pages20-23
    ISBN (Electronic)3-936338-33-7
    DOIs
    Publication statusPublished - 2013
    MoE publication typeB3 Non-refereed article in conference proceedings
    Event28th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2013 - Paris, France
    Duration: 30 Sep 20134 Oct 2013

    Conference

    Conference28th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2013
    CountryFrance
    CityParis
    Period30/09/134/10/13

    Fingerprint

    entropy
    solar cells
    electromagnetic absorption
    electromagnetic radiation

    Cite this

    Reck, K., Varpula, A., Prunnila, M., & Hansen, O. (2013). Emission and absorption entropy generation in semiconductors. In Proceedings of the 28th European Photovoltaic Solar Energy Conference and Exhibition (pp. 20-23) https://doi.org/10.4229/28thEUPVSEC2013-1BO.9.4
    Reck, K. ; Varpula, Aapo ; Prunnila, Mika ; Hansen, O. / Emission and absorption entropy generation in semiconductors. Proceedings of the 28th European Photovoltaic Solar Energy Conference and Exhibition. 2013. pp. 20-23
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    title = "Emission and absorption entropy generation in semiconductors",
    abstract = "While emission and absorption entropy generation is well known in black bodies, it has not previously been studied in semiconductors, even though semiconductors are widely used for solar light absorption in modern solar cells [1]. We present an analysis of the entropy generation in semiconductor materials due to emission and absorption of electromagnetic radiation. It is shown that the emission and absorption entropy generation reduces the fundamental limit on the efficiency of any semiconductor solar cell even further than the Landsberg limit. The results are derived from purely thermodynamical considerations and are thus of general validity. A modified Landsberg efficiency and numerical results are given.",
    author = "K. Reck and Aapo Varpula and Mika Prunnila and O. Hansen",
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    Reck, K, Varpula, A, Prunnila, M & Hansen, O 2013, Emission and absorption entropy generation in semiconductors. in Proceedings of the 28th European Photovoltaic Solar Energy Conference and Exhibition. pp. 20-23, 28th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2013, Paris, France, 30/09/13. https://doi.org/10.4229/28thEUPVSEC2013-1BO.9.4

    Emission and absorption entropy generation in semiconductors. / Reck, K.; Varpula, Aapo; Prunnila, Mika; Hansen, O.

    Proceedings of the 28th European Photovoltaic Solar Energy Conference and Exhibition. 2013. p. 20-23.

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientific

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    AU - Reck, K.

    AU - Varpula, Aapo

    AU - Prunnila, Mika

    AU - Hansen, O.

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    PY - 2013

    Y1 - 2013

    N2 - While emission and absorption entropy generation is well known in black bodies, it has not previously been studied in semiconductors, even though semiconductors are widely used for solar light absorption in modern solar cells [1]. We present an analysis of the entropy generation in semiconductor materials due to emission and absorption of electromagnetic radiation. It is shown that the emission and absorption entropy generation reduces the fundamental limit on the efficiency of any semiconductor solar cell even further than the Landsberg limit. The results are derived from purely thermodynamical considerations and are thus of general validity. A modified Landsberg efficiency and numerical results are given.

    AB - While emission and absorption entropy generation is well known in black bodies, it has not previously been studied in semiconductors, even though semiconductors are widely used for solar light absorption in modern solar cells [1]. We present an analysis of the entropy generation in semiconductor materials due to emission and absorption of electromagnetic radiation. It is shown that the emission and absorption entropy generation reduces the fundamental limit on the efficiency of any semiconductor solar cell even further than the Landsberg limit. The results are derived from purely thermodynamical considerations and are thus of general validity. A modified Landsberg efficiency and numerical results are given.

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    Reck K, Varpula A, Prunnila M, Hansen O. Emission and absorption entropy generation in semiconductors. In Proceedings of the 28th European Photovoltaic Solar Energy Conference and Exhibition. 2013. p. 20-23 https://doi.org/10.4229/28thEUPVSEC2013-1BO.9.4