Emission and absorption entropy generation in semiconductors

K. Reck, Aapo Varpula, Mika Prunnila, O. Hansen

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientific

32 Citations (Scopus)

Abstract

While emission and absorption entropy generation is well known in black bodies, it has not previously been studied in semiconductors, even though semiconductors are widely used for solar light absorption in modern solar cells [1]. We present an analysis of the entropy generation in semiconductor materials due to emission and absorption of electromagnetic radiation. It is shown that the emission and absorption entropy generation reduces the fundamental limit on the efficiency of any semiconductor solar cell even further than the Landsberg limit. The results are derived from purely thermodynamical considerations and are thus of general validity. A modified Landsberg efficiency and numerical results are given.
Original languageEnglish
Title of host publicationProceedings of the 28th European Photovoltaic Solar Energy Conference and Exhibition
Pages20-23
ISBN (Electronic)3-936338-33-7
DOIs
Publication statusPublished - 2013
MoE publication typeB3 Non-refereed article in conference proceedings
Event28th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2013 - Paris, France
Duration: 30 Sep 20134 Oct 2013

Conference

Conference28th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2013
CountryFrance
CityParis
Period30/09/134/10/13

Fingerprint

entropy
solar cells
electromagnetic absorption
electromagnetic radiation

Cite this

Reck, K., Varpula, A., Prunnila, M., & Hansen, O. (2013). Emission and absorption entropy generation in semiconductors. In Proceedings of the 28th European Photovoltaic Solar Energy Conference and Exhibition (pp. 20-23) https://doi.org/10.4229/28thEUPVSEC2013-1BO.9.4
Reck, K. ; Varpula, Aapo ; Prunnila, Mika ; Hansen, O. / Emission and absorption entropy generation in semiconductors. Proceedings of the 28th European Photovoltaic Solar Energy Conference and Exhibition. 2013. pp. 20-23
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Reck, K, Varpula, A, Prunnila, M & Hansen, O 2013, Emission and absorption entropy generation in semiconductors. in Proceedings of the 28th European Photovoltaic Solar Energy Conference and Exhibition. pp. 20-23, 28th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2013, Paris, France, 30/09/13. https://doi.org/10.4229/28thEUPVSEC2013-1BO.9.4

Emission and absorption entropy generation in semiconductors. / Reck, K.; Varpula, Aapo; Prunnila, Mika; Hansen, O.

Proceedings of the 28th European Photovoltaic Solar Energy Conference and Exhibition. 2013. p. 20-23.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientific

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N2 - While emission and absorption entropy generation is well known in black bodies, it has not previously been studied in semiconductors, even though semiconductors are widely used for solar light absorption in modern solar cells [1]. We present an analysis of the entropy generation in semiconductor materials due to emission and absorption of electromagnetic radiation. It is shown that the emission and absorption entropy generation reduces the fundamental limit on the efficiency of any semiconductor solar cell even further than the Landsberg limit. The results are derived from purely thermodynamical considerations and are thus of general validity. A modified Landsberg efficiency and numerical results are given.

AB - While emission and absorption entropy generation is well known in black bodies, it has not previously been studied in semiconductors, even though semiconductors are widely used for solar light absorption in modern solar cells [1]. We present an analysis of the entropy generation in semiconductor materials due to emission and absorption of electromagnetic radiation. It is shown that the emission and absorption entropy generation reduces the fundamental limit on the efficiency of any semiconductor solar cell even further than the Landsberg limit. The results are derived from purely thermodynamical considerations and are thus of general validity. A modified Landsberg efficiency and numerical results are given.

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Reck K, Varpula A, Prunnila M, Hansen O. Emission and absorption entropy generation in semiconductors. In Proceedings of the 28th European Photovoltaic Solar Energy Conference and Exhibition. 2013. p. 20-23 https://doi.org/10.4229/28thEUPVSEC2013-1BO.9.4