Energy Transport Between Hole Gas and Crystal Lattice in Diluted Magnetic Semiconductor

Jani Kivioja, Mika Prunnila, Sergei Novikov, Pekka Kuivalainen, Jouni Ahopelto

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientific

    Abstract

    The temperature dependent energy transfer rate between hole gas and lattice has been investigated in thin MnxGa1-xAs (x=3.7% and 4.0%) films by heating the hole system with power density Pd and measuring the hole temperature Th. The MnxGa1-xAs films were grown by low-temperature MBE at 230 ºC. In the experiments we study two samples with manganese concentrations x=3.7 % and 4.0 %. and Curie temperatures of 60 K and 62 K, respectively
    Original languageEnglish
    Title of host publicationPhysics of Semiconductors
    PublisherAmerican Institute of Physics AIP
    ISBN (Print)978-0-7354-0397-0
    DOIs
    Publication statusPublished - 2007
    MoE publication typeB3 Non-refereed article in conference proceedings
    Event28th International Conference on the Physics of Semiconductors - ICPS 2006 - Vienna, Austria
    Duration: 24 Jul 200628 Jul 2006

    Publication series

    SeriesAIP Conference Proceedings
    Volume893
    ISSN0094-243X

    Conference

    Conference28th International Conference on the Physics of Semiconductors - ICPS 2006
    CountryAustria
    CityVienna
    Period24/07/0628/07/06

    Keywords

    • spintronics
    • electron-phonon coupling

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  • Cite this

    Kivioja, J., Prunnila, M., Novikov, S., Kuivalainen, P., & Ahopelto, J. (2007). Energy Transport Between Hole Gas and Crystal Lattice in Diluted Magnetic Semiconductor. In Physics of Semiconductors American Institute of Physics AIP. AIP Conference Proceedings, Vol.. 893 https://doi.org/10.1063/1.2730349