Energy Transport Between Hole Gas and Crystal Lattice in Diluted Magnetic Semiconductor

Jani Kivioja, Mika Prunnila, Sergei Novikov, Pekka Kuivalainen, Jouni Ahopelto

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientific

    Abstract

    The temperature dependent energy transfer rate between hole gas and lattice has been investigated in thin MnxGa1-xAs (x=3.7% and 4.0%) films by heating the hole system with power density Pd and measuring the hole temperature Th. The MnxGa1-xAs films were grown by low-temperature MBE at 230 ºC. In the experiments we study two samples with manganese concentrations x=3.7 % and 4.0 %. and Curie temperatures of 60 K and 62 K, respectively
    Original languageEnglish
    Title of host publicationPhysics of Semiconductors
    PublisherAmerican Institute of Physics AIP
    ISBN (Print)978-0-7354-0397-0
    DOIs
    Publication statusPublished - 2007
    MoE publication typeB3 Non-refereed article in conference proceedings
    Event28th International Conference on the Physics of Semiconductors - ICPS 2006 - Vienna, Austria
    Duration: 24 Jul 200628 Jul 2006

    Publication series

    SeriesAIP Conference Proceedings
    Volume893
    ISSN0094-243X

    Conference

    Conference28th International Conference on the Physics of Semiconductors - ICPS 2006
    CountryAustria
    CityVienna
    Period24/07/0628/07/06

    Fingerprint

    crystal lattices
    gases
    energy
    manganese
    radiant flux density
    Curie temperature
    energy transfer
    heating
    temperature

    Keywords

    • spintronics
    • electron-phonon coupling

    Cite this

    Kivioja, J., Prunnila, M., Novikov, S., Kuivalainen, P., & Ahopelto, J. (2007). Energy Transport Between Hole Gas and Crystal Lattice in Diluted Magnetic Semiconductor. In Physics of Semiconductors American Institute of Physics AIP. AIP Conference Proceedings, Vol.. 893 https://doi.org/10.1063/1.2730349
    Kivioja, Jani ; Prunnila, Mika ; Novikov, Sergei ; Kuivalainen, Pekka ; Ahopelto, Jouni. / Energy Transport Between Hole Gas and Crystal Lattice in Diluted Magnetic Semiconductor. Physics of Semiconductors. American Institute of Physics AIP, 2007. (AIP Conference Proceedings, Vol. 893).
    @inproceedings{0ff4246649ff4e77a22373bd0636de44,
    title = "Energy Transport Between Hole Gas and Crystal Lattice in Diluted Magnetic Semiconductor",
    abstract = "The temperature dependent energy transfer rate between hole gas and lattice has been investigated in thin MnxGa1-xAs (x=3.7{\%} and 4.0{\%}) films by heating the hole system with power density Pd and measuring the hole temperature Th. The MnxGa1-xAs films were grown by low-temperature MBE at 230 ºC. In the experiments we study two samples with manganese concentrations x=3.7 {\%} and 4.0 {\%}. and Curie temperatures of 60 K and 62 K, respectively",
    keywords = "spintronics, electron-phonon coupling",
    author = "Jani Kivioja and Mika Prunnila and Sergei Novikov and Pekka Kuivalainen and Jouni Ahopelto",
    year = "2007",
    doi = "10.1063/1.2730349",
    language = "English",
    isbn = "978-0-7354-0397-0",
    series = "AIP Conference Proceedings",
    publisher = "American Institute of Physics AIP",
    booktitle = "Physics of Semiconductors",
    address = "United States",

    }

    Kivioja, J, Prunnila, M, Novikov, S, Kuivalainen, P & Ahopelto, J 2007, Energy Transport Between Hole Gas and Crystal Lattice in Diluted Magnetic Semiconductor. in Physics of Semiconductors. American Institute of Physics AIP, AIP Conference Proceedings, vol. 893, 28th International Conference on the Physics of Semiconductors - ICPS 2006, Vienna, Austria, 24/07/06. https://doi.org/10.1063/1.2730349

    Energy Transport Between Hole Gas and Crystal Lattice in Diluted Magnetic Semiconductor. / Kivioja, Jani; Prunnila, Mika; Novikov, Sergei; Kuivalainen, Pekka; Ahopelto, Jouni.

    Physics of Semiconductors. American Institute of Physics AIP, 2007. (AIP Conference Proceedings, Vol. 893).

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientific

    TY - GEN

    T1 - Energy Transport Between Hole Gas and Crystal Lattice in Diluted Magnetic Semiconductor

    AU - Kivioja, Jani

    AU - Prunnila, Mika

    AU - Novikov, Sergei

    AU - Kuivalainen, Pekka

    AU - Ahopelto, Jouni

    PY - 2007

    Y1 - 2007

    N2 - The temperature dependent energy transfer rate between hole gas and lattice has been investigated in thin MnxGa1-xAs (x=3.7% and 4.0%) films by heating the hole system with power density Pd and measuring the hole temperature Th. The MnxGa1-xAs films were grown by low-temperature MBE at 230 ºC. In the experiments we study two samples with manganese concentrations x=3.7 % and 4.0 %. and Curie temperatures of 60 K and 62 K, respectively

    AB - The temperature dependent energy transfer rate between hole gas and lattice has been investigated in thin MnxGa1-xAs (x=3.7% and 4.0%) films by heating the hole system with power density Pd and measuring the hole temperature Th. The MnxGa1-xAs films were grown by low-temperature MBE at 230 ºC. In the experiments we study two samples with manganese concentrations x=3.7 % and 4.0 %. and Curie temperatures of 60 K and 62 K, respectively

    KW - spintronics

    KW - electron-phonon coupling

    U2 - 10.1063/1.2730349

    DO - 10.1063/1.2730349

    M3 - Conference article in proceedings

    SN - 978-0-7354-0397-0

    T3 - AIP Conference Proceedings

    BT - Physics of Semiconductors

    PB - American Institute of Physics AIP

    ER -

    Kivioja J, Prunnila M, Novikov S, Kuivalainen P, Ahopelto J. Energy Transport Between Hole Gas and Crystal Lattice in Diluted Magnetic Semiconductor. In Physics of Semiconductors. American Institute of Physics AIP. 2007. (AIP Conference Proceedings, Vol. 893). https://doi.org/10.1063/1.2730349