Enhanced electroluminescence in 405 nm InGaN/GaN LEDs by optimized electron blocking layer

Olli Svensk; Pekka Törmä; Sami Suihkonen; Muhammad Ali; Harri Lipsanen; Markku Sopanen; Maxim Odnoblyudov; Vladislav Bougrov

doi:10.1016/j.jcrysgro.2008.07.025

Enhanced electroluminescence in 405 nm InGaN/GaN LEDs by optimized electron blocking layer

Olli Svensk^*, Pekka Törmä, Sami Suihkonen, Muhammad Ali, Harri Lipsanen, Markku Sopanen, Maxim Odnoblyudov, Vladislav Bougrov

^*Corresponding author for this work

Not published at VTT

Research output: Contribution to journal › Article › Scientific › peer-review

Abstract

In this work, we have investigated the effect of AlGaN electron blocking layer (EBL) doping level and thickness on the optical properties of near-UV (405 nm) InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs) grown by metal organic chemical vapor deposition (MOCVD). Photoluminescence (PL) and electroluminescence (EL) of LEDs with a 50-nm-thick undoped GaN spacer layer between the EBL and the MQW stack were systematically studied. We will present evidence showing that the optimal EBL doping and thickness has an important role in the optimization of near-UV LED output power. By employing the optimized EBL structure we were able to enhance the EL intensity by a factor of five compared to the similar structure without the EBL. © 2008 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	5154-5157
Journal	Journal of Crystal Growth
Volume	310
Issue number	23
DOIs	https://doi.org/10.1016/j.jcrysgro.2008.07.025
Publication status	Published - 15 Nov 2008
MoE publication type	A1 Journal article-refereed

Keywords

A1. Diffusion
A1. Doping
A3. MOCVD
B1. Nitrides
B2. Semiconducting III-V materials

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10.1016/j.jcrysgro.2008.07.025

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@article{178296b2f9cc4c3fbf66ee5b7d059df9,

title = "Enhanced electroluminescence in 405 nm InGaN/GaN LEDs by optimized electron blocking layer",

abstract = "In this work, we have investigated the effect of AlGaN electron blocking layer (EBL) doping level and thickness on the optical properties of near-UV (405 nm) InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs) grown by metal organic chemical vapor deposition (MOCVD). Photoluminescence (PL) and electroluminescence (EL) of LEDs with a 50-nm-thick undoped GaN spacer layer between the EBL and the MQW stack were systematically studied. We will present evidence showing that the optimal EBL doping and thickness has an important role in the optimization of near-UV LED output power. By employing the optimized EBL structure we were able to enhance the EL intensity by a factor of five compared to the similar structure without the EBL. {\textcopyright} 2008 Elsevier B.V. All rights reserved.",

keywords = "A1. Diffusion, A1. Doping, A3. MOCVD, B1. Nitrides, B2. Semiconducting III-V materials",

author = "Olli Svensk and Pekka T{\"o}rm{\"a} and Sami Suihkonen and Muhammad Ali and Harri Lipsanen and Markku Sopanen and Maxim Odnoblyudov and Vladislav Bougrov",

year = "2008",

month = nov,

day = "15",

doi = "10.1016/j.jcrysgro.2008.07.025",

language = "English",

volume = "310",

pages = "5154--5157",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "23",

}

TY - JOUR

T1 - Enhanced electroluminescence in 405 nm InGaN/GaN LEDs by optimized electron blocking layer

AU - Svensk, Olli

AU - Törmä, Pekka

AU - Suihkonen, Sami

AU - Ali, Muhammad

AU - Lipsanen, Harri

AU - Sopanen, Markku

AU - Odnoblyudov, Maxim

AU - Bougrov, Vladislav

PY - 2008/11/15

Y1 - 2008/11/15

N2 - In this work, we have investigated the effect of AlGaN electron blocking layer (EBL) doping level and thickness on the optical properties of near-UV (405 nm) InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs) grown by metal organic chemical vapor deposition (MOCVD). Photoluminescence (PL) and electroluminescence (EL) of LEDs with a 50-nm-thick undoped GaN spacer layer between the EBL and the MQW stack were systematically studied. We will present evidence showing that the optimal EBL doping and thickness has an important role in the optimization of near-UV LED output power. By employing the optimized EBL structure we were able to enhance the EL intensity by a factor of five compared to the similar structure without the EBL. © 2008 Elsevier B.V. All rights reserved.

AB - In this work, we have investigated the effect of AlGaN electron blocking layer (EBL) doping level and thickness on the optical properties of near-UV (405 nm) InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs) grown by metal organic chemical vapor deposition (MOCVD). Photoluminescence (PL) and electroluminescence (EL) of LEDs with a 50-nm-thick undoped GaN spacer layer between the EBL and the MQW stack were systematically studied. We will present evidence showing that the optimal EBL doping and thickness has an important role in the optimization of near-UV LED output power. By employing the optimized EBL structure we were able to enhance the EL intensity by a factor of five compared to the similar structure without the EBL. © 2008 Elsevier B.V. All rights reserved.

KW - A1. Diffusion

KW - A1. Doping

KW - A3. MOCVD

KW - B1. Nitrides

KW - B2. Semiconducting III-V materials

U2 - 10.1016/j.jcrysgro.2008.07.025

DO - 10.1016/j.jcrysgro.2008.07.025

M3 - Article

SN - 0022-0248

VL - 310

SP - 5154

EP - 5157

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 23

ER -

Enhanced electroluminescence in 405 nm InGaN/GaN LEDs by optimized electron blocking layer

Abstract

Keywords

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