INIS
electrons
100%
blocking layer
100%
light emitting diodes
100%
electroluminescence
100%
gallium nitrides
100%
thickness
33%
quantum wells
33%
layers
16%
output
16%
comparative evaluations
16%
levels
16%
optimization
16%
chemical vapor deposition
16%
power
16%
optical properties
16%
photoluminescence
16%
stacks
16%
organometallic compounds
16%
ultraviolet radiation
16%
spacers
16%
Keyphrases
Electroluminescence
100%
GaN-based Light-emitting Diodes
100%
Electron Blocking Layer
100%
Indium Gallium Nitride (InGaN)
100%
Light-emitting Diodes
33%
Multiple Quantum Wells
33%
Optical Properties
16%
Similarity Structure
16%
Power Output
16%
Ultraviolet Light-emitting Diode (UV-LED)
16%
Layered Structure
16%
Photoluminescence
16%
Doping Level
16%
Undoped
16%
Metal-organic Chemical Vapor Deposition (MOCVD)
16%
Near-UV
16%
Spacer Layer
16%
Aluminum Gallium Nitride (AlGaN)
16%
Electroluminescence Intensity
16%
Near UV Light
16%
GaN Spacer
16%
Physics
Light Emitting Diode
100%
Electroluminescence
100%
Multiple Quantum Well
50%
Ultraviolet Radiation
25%
Metalorganic Chemical Vapor Deposition
25%
Optical Property
25%
Photoluminescence
25%
Engineering
Light-Emitting Diode
100%
Luminaires
100%
Quantum Well
50%
Output Power
25%
Layer Structure
25%
Doping Level
25%
Material Science
Light-Emitting Diode
100%
Electroluminescence
100%
Quantum Well
50%
Photoluminescence
25%
Optical Property
25%
Chemical Engineering
Vapor Deposition
100%
Chemical Vapor Deposition
100%