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Enhanced electroluminescence in 405 nm InGaN/GaN LEDs by optimized electron blocking layer

  • Olli Svensk*
  • , Pekka Törmä
  • , Sami Suihkonen
  • , Muhammad Ali
  • , Harri Lipsanen
  • , Markku Sopanen
  • , Maxim Odnoblyudov
  • , Vladislav Bougrov
    • *Corresponding author for this work
  • OptoGaN Oy
  • Helsinki University of Technology

Research output: Contribution to journal › Article › Scientific › peer-review

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