Enhanced luminescence of near-surface quantum wells passivated in situ by InP

Harri Lipsanen, Markku Sopanen, M. Taskinen, J. Tulkki, Jouni Ahopelto

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

The authors report optical properties of in situ passivated AlGaAs and GaAs surfaces. The deposition of an ultra thin InP layer (about one monolayer) on the surface of AlGaAs/GaAs structures by metalorganic vapor phase epitaxy (MOVPE) results in drastically reduced surface recombination. The effect is studied by low-temperature photoluminescence (PL) of near-surface AlGaAs/GaAs quantum wells (QW) where the top barrier thickness is varied from 0 to 50 nm. At the thickness of 15 nm the intensity from passivated samples is more than four orders of magnitude larger than obtained from unpassivated structures. Photoreflectance (PR) measurements are used to determine the Fermi level pinning at the surface. The InP passivation is shown to reduce the surface pinning by about 0.3 eV.
Original languageEnglish
Title of host publicationProceedings of 8th International Conference on Indium Phosphide and Related Materials
PublisherIEEE Institute of Electrical and Electronic Engineers
Pages490-493
ISBN (Print)0-7803-3283-0
DOIs
Publication statusPublished - 1996
MoE publication typeA4 Article in a conference publication
Event8th International Conference on Indium Phosphide and Related Materials, IPRM 1996 - Schwäbisch-Gmundt, Germany
Duration: 21 Apr 199625 Apr 1996

Conference

Conference8th International Conference on Indium Phosphide and Related Materials, IPRM 1996
Abbreviated titleIPRM '96
CountryGermany
CitySchwäbisch-Gmundt
Period21/04/9625/04/96

Fingerprint

quantum wells
luminescence
aluminum gallium arsenides
vapor phase epitaxy
passivity
photoluminescence
optical properties

Keywords

  • quantum wells

Cite this

Lipsanen, H., Sopanen, M., Taskinen, M., Tulkki, J., & Ahopelto, J. (1996). Enhanced luminescence of near-surface quantum wells passivated in situ by InP. In Proceedings of 8th International Conference on Indium Phosphide and Related Materials (pp. 490-493). IEEE Institute of Electrical and Electronic Engineers . https://doi.org/10.1109/ICIPRM.1996.492289
Lipsanen, Harri ; Sopanen, Markku ; Taskinen, M. ; Tulkki, J. ; Ahopelto, Jouni. / Enhanced luminescence of near-surface quantum wells passivated in situ by InP. Proceedings of 8th International Conference on Indium Phosphide and Related Materials. IEEE Institute of Electrical and Electronic Engineers , 1996. pp. 490-493
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title = "Enhanced luminescence of near-surface quantum wells passivated in situ by InP",
abstract = "The authors report optical properties of in situ passivated AlGaAs and GaAs surfaces. The deposition of an ultra thin InP layer (about one monolayer) on the surface of AlGaAs/GaAs structures by metalorganic vapor phase epitaxy (MOVPE) results in drastically reduced surface recombination. The effect is studied by low-temperature photoluminescence (PL) of near-surface AlGaAs/GaAs quantum wells (QW) where the top barrier thickness is varied from 0 to 50 nm. At the thickness of 15 nm the intensity from passivated samples is more than four orders of magnitude larger than obtained from unpassivated structures. Photoreflectance (PR) measurements are used to determine the Fermi level pinning at the surface. The InP passivation is shown to reduce the surface pinning by about 0.3 eV.",
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Lipsanen, H, Sopanen, M, Taskinen, M, Tulkki, J & Ahopelto, J 1996, Enhanced luminescence of near-surface quantum wells passivated in situ by InP. in Proceedings of 8th International Conference on Indium Phosphide and Related Materials. IEEE Institute of Electrical and Electronic Engineers , pp. 490-493, 8th International Conference on Indium Phosphide and Related Materials, IPRM 1996, Schwäbisch-Gmundt, Germany, 21/04/96. https://doi.org/10.1109/ICIPRM.1996.492289

Enhanced luminescence of near-surface quantum wells passivated in situ by InP. / Lipsanen, Harri; Sopanen, Markku; Taskinen, M.; Tulkki, J.; Ahopelto, Jouni.

Proceedings of 8th International Conference on Indium Phosphide and Related Materials. IEEE Institute of Electrical and Electronic Engineers , 1996. p. 490-493.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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T1 - Enhanced luminescence of near-surface quantum wells passivated in situ by InP

AU - Lipsanen, Harri

AU - Sopanen, Markku

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AU - Ahopelto, Jouni

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N2 - The authors report optical properties of in situ passivated AlGaAs and GaAs surfaces. The deposition of an ultra thin InP layer (about one monolayer) on the surface of AlGaAs/GaAs structures by metalorganic vapor phase epitaxy (MOVPE) results in drastically reduced surface recombination. The effect is studied by low-temperature photoluminescence (PL) of near-surface AlGaAs/GaAs quantum wells (QW) where the top barrier thickness is varied from 0 to 50 nm. At the thickness of 15 nm the intensity from passivated samples is more than four orders of magnitude larger than obtained from unpassivated structures. Photoreflectance (PR) measurements are used to determine the Fermi level pinning at the surface. The InP passivation is shown to reduce the surface pinning by about 0.3 eV.

AB - The authors report optical properties of in situ passivated AlGaAs and GaAs surfaces. The deposition of an ultra thin InP layer (about one monolayer) on the surface of AlGaAs/GaAs structures by metalorganic vapor phase epitaxy (MOVPE) results in drastically reduced surface recombination. The effect is studied by low-temperature photoluminescence (PL) of near-surface AlGaAs/GaAs quantum wells (QW) where the top barrier thickness is varied from 0 to 50 nm. At the thickness of 15 nm the intensity from passivated samples is more than four orders of magnitude larger than obtained from unpassivated structures. Photoreflectance (PR) measurements are used to determine the Fermi level pinning at the surface. The InP passivation is shown to reduce the surface pinning by about 0.3 eV.

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DO - 10.1109/ICIPRM.1996.492289

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Lipsanen H, Sopanen M, Taskinen M, Tulkki J, Ahopelto J. Enhanced luminescence of near-surface quantum wells passivated in situ by InP. In Proceedings of 8th International Conference on Indium Phosphide and Related Materials. IEEE Institute of Electrical and Electronic Engineers . 1996. p. 490-493 https://doi.org/10.1109/ICIPRM.1996.492289