Enhanced luminescence of near-surface quantum wells passivated in situ by InP

Harri Lipsanen; Markku Sopanen; M. Taskinen; J. Tulkki; Jouni Ahopelto

doi:10.1109/ICIPRM.1996.492289

Enhanced luminescence of near-surface quantum wells passivated in situ by InP

Harri Lipsanen, Markku Sopanen, M. Taskinen, J. Tulkki, Jouni Ahopelto

Helsinki University of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

The authors report optical properties of in situ passivated AlGaAs and GaAs surfaces. The deposition of an ultra thin InP layer (about one monolayer) on the surface of AlGaAs/GaAs structures by metalorganic vapor phase epitaxy (MOVPE) results in drastically reduced surface recombination. The effect is studied by low-temperature photoluminescence (PL) of near-surface AlGaAs/GaAs quantum wells (QW) where the top barrier thickness is varied from 0 to 50 nm. At the thickness of 15 nm the intensity from passivated samples is more than four orders of magnitude larger than obtained from unpassivated structures. Photoreflectance (PR) measurements are used to determine the Fermi level pinning at the surface. The InP passivation is shown to reduce the surface pinning by about 0.3 eV.

Original language	English
Title of host publication	Proceedings of 8th International Conference on Indium Phosphide and Related Materials
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	490-493
ISBN (Print)	978-0-7803-3283-6
DOIs	https://doi.org/10.1109/ICIPRM.1996.492289
Publication status	Published - 1996
MoE publication type	A4 Article in a conference publication
Event	8th International Conference on Indium Phosphide and Related Materials, IPRM 1996 - Schwäbisch-Gmundt, Germany Duration: 21 Apr 1996 → 25 Apr 1996

Conference

Conference	8th International Conference on Indium Phosphide and Related Materials, IPRM 1996
Abbreviated title	IPRM '96
Country/Territory	Germany
City	Schwäbisch-Gmundt
Period	21/04/96 → 25/04/96

Keywords

quantum wells

Access to Document

10.1109/ICIPRM.1996.492289

Cite this

@inproceedings{0144a93be0964cbcab587f7597280f99,

title = "Enhanced luminescence of near-surface quantum wells passivated in situ by InP",

abstract = "The authors report optical properties of in situ passivated AlGaAs and GaAs surfaces. The deposition of an ultra thin InP layer (about one monolayer) on the surface of AlGaAs/GaAs structures by metalorganic vapor phase epitaxy (MOVPE) results in drastically reduced surface recombination. The effect is studied by low-temperature photoluminescence (PL) of near-surface AlGaAs/GaAs quantum wells (QW) where the top barrier thickness is varied from 0 to 50 nm. At the thickness of 15 nm the intensity from passivated samples is more than four orders of magnitude larger than obtained from unpassivated structures. Photoreflectance (PR) measurements are used to determine the Fermi level pinning at the surface. The InP passivation is shown to reduce the surface pinning by about 0.3 eV.",

keywords = "quantum wells",

author = "Harri Lipsanen and Markku Sopanen and M. Taskinen and J. Tulkki and Jouni Ahopelto",

year = "1996",

doi = "10.1109/ICIPRM.1996.492289",

language = "English",

isbn = "978-0-7803-3283-6",

pages = "490--493",

booktitle = "Proceedings of 8th International Conference on Indium Phosphide and Related Materials",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

note = "8th International Conference on Indium Phosphide and Related Materials, IPRM 1996, IPRM '96 ; Conference date: 21-04-1996 Through 25-04-1996",

}

Lipsanen, H, Sopanen, M, Taskinen, M, Tulkki, J & Ahopelto, J 1996, Enhanced luminescence of near-surface quantum wells passivated in situ by InP. in Proceedings of 8th International Conference on Indium Phosphide and Related Materials. IEEE Institute of Electrical and Electronic Engineers, pp. 490-493, 8th International Conference on Indium Phosphide and Related Materials, IPRM 1996, Schwäbisch-Gmundt, Germany, 21/04/96. https://doi.org/10.1109/ICIPRM.1996.492289

Enhanced luminescence of near-surface quantum wells passivated in situ by InP. / Lipsanen, Harri; Sopanen, Markku; Taskinen, M. et al.
Proceedings of 8th International Conference on Indium Phosphide and Related Materials. IEEE Institute of Electrical and Electronic Engineers, 1996. p. 490-493.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Enhanced luminescence of near-surface quantum wells passivated in situ by InP

AU - Lipsanen, Harri

AU - Sopanen, Markku

AU - Taskinen, M.

AU - Tulkki, J.

AU - Ahopelto, Jouni

PY - 1996

Y1 - 1996

N2 - The authors report optical properties of in situ passivated AlGaAs and GaAs surfaces. The deposition of an ultra thin InP layer (about one monolayer) on the surface of AlGaAs/GaAs structures by metalorganic vapor phase epitaxy (MOVPE) results in drastically reduced surface recombination. The effect is studied by low-temperature photoluminescence (PL) of near-surface AlGaAs/GaAs quantum wells (QW) where the top barrier thickness is varied from 0 to 50 nm. At the thickness of 15 nm the intensity from passivated samples is more than four orders of magnitude larger than obtained from unpassivated structures. Photoreflectance (PR) measurements are used to determine the Fermi level pinning at the surface. The InP passivation is shown to reduce the surface pinning by about 0.3 eV.

AB - The authors report optical properties of in situ passivated AlGaAs and GaAs surfaces. The deposition of an ultra thin InP layer (about one monolayer) on the surface of AlGaAs/GaAs structures by metalorganic vapor phase epitaxy (MOVPE) results in drastically reduced surface recombination. The effect is studied by low-temperature photoluminescence (PL) of near-surface AlGaAs/GaAs quantum wells (QW) where the top barrier thickness is varied from 0 to 50 nm. At the thickness of 15 nm the intensity from passivated samples is more than four orders of magnitude larger than obtained from unpassivated structures. Photoreflectance (PR) measurements are used to determine the Fermi level pinning at the surface. The InP passivation is shown to reduce the surface pinning by about 0.3 eV.

KW - quantum wells

U2 - 10.1109/ICIPRM.1996.492289

DO - 10.1109/ICIPRM.1996.492289

M3 - Conference article in proceedings

SN - 978-0-7803-3283-6

SP - 490

EP - 493

BT - Proceedings of 8th International Conference on Indium Phosphide and Related Materials

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - 8th International Conference on Indium Phosphide and Related Materials, IPRM 1996

Y2 - 21 April 1996 through 25 April 1996

ER -

Enhanced luminescence of near-surface quantum wells passivated in situ by InP

Abstract

Conference

Keywords

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Cite this