Enhanced model for short channel MOSFET's

Pekka Kuivalainen, Mikael Andersson, Simo Eränen, Hannu Ronkainen

    Research output: Contribution to journalArticleScientificpeer-review

    2 Citations (Scopus)

    Abstract

    The accuracy of the existing metal-oxide-semiconductor-field-effect-transistor (MOSFET) models used in simulations of the integrated circuits can be enhanced by restoring some of the device physics which has previously been eliminated in the original models.
    The model modifications include an improved treatment of mobility degradation phenomena and an improved approximation for the saturation voltage.
    These modifications result in excellent agreement with the experimental data for both n- and p-channel transistors having effective channel lengths as small as 0.5 μm. In contrast to previous models the agreement with the measured data is achieved by using a physically acceptable value for the charge carrier saturation velocity and a smaller number of fitting parameters.
    Original languageEnglish
    Pages (from-to)476-480
    JournalPhysica Scripta
    Volume46
    Issue number5
    DOIs
    Publication statusPublished - 1992
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Field-effect Transistor
    metal oxide semiconductors
    Oxides
    Semiconductors
    field effect transistors
    Metals
    Saturation
    saturation
    Integrated Circuits
    Model
    integrated circuits
    charge carriers
    Degradation
    transistors
    Voltage
    Charge
    Physics
    Experimental Data
    degradation
    physics

    Cite this

    Kuivalainen, Pekka ; Andersson, Mikael ; Eränen, Simo ; Ronkainen, Hannu. / Enhanced model for short channel MOSFET's. In: Physica Scripta. 1992 ; Vol. 46, No. 5. pp. 476-480.
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    title = "Enhanced model for short channel MOSFET's",
    abstract = "The accuracy of the existing metal-oxide-semiconductor-field-effect-transistor (MOSFET) models used in simulations of the integrated circuits can be enhanced by restoring some of the device physics which has previously been eliminated in the original models. The model modifications include an improved treatment of mobility degradation phenomena and an improved approximation for the saturation voltage. These modifications result in excellent agreement with the experimental data for both n- and p-channel transistors having effective channel lengths as small as 0.5 μm. In contrast to previous models the agreement with the measured data is achieved by using a physically acceptable value for the charge carrier saturation velocity and a smaller number of fitting parameters.",
    author = "Pekka Kuivalainen and Mikael Andersson and Simo Er{\"a}nen and Hannu Ronkainen",
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    Kuivalainen, P, Andersson, M, Eränen, S & Ronkainen, H 1992, 'Enhanced model for short channel MOSFET's', Physica Scripta, vol. 46, no. 5, pp. 476-480. https://doi.org/10.1088/0031-8949/46/5/016

    Enhanced model for short channel MOSFET's. / Kuivalainen, Pekka; Andersson, Mikael; Eränen, Simo; Ronkainen, Hannu.

    In: Physica Scripta, Vol. 46, No. 5, 1992, p. 476-480.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Enhanced model for short channel MOSFET's

    AU - Kuivalainen, Pekka

    AU - Andersson, Mikael

    AU - Eränen, Simo

    AU - Ronkainen, Hannu

    N1 - Project code: PUO1008

    PY - 1992

    Y1 - 1992

    N2 - The accuracy of the existing metal-oxide-semiconductor-field-effect-transistor (MOSFET) models used in simulations of the integrated circuits can be enhanced by restoring some of the device physics which has previously been eliminated in the original models. The model modifications include an improved treatment of mobility degradation phenomena and an improved approximation for the saturation voltage. These modifications result in excellent agreement with the experimental data for both n- and p-channel transistors having effective channel lengths as small as 0.5 μm. In contrast to previous models the agreement with the measured data is achieved by using a physically acceptable value for the charge carrier saturation velocity and a smaller number of fitting parameters.

    AB - The accuracy of the existing metal-oxide-semiconductor-field-effect-transistor (MOSFET) models used in simulations of the integrated circuits can be enhanced by restoring some of the device physics which has previously been eliminated in the original models. The model modifications include an improved treatment of mobility degradation phenomena and an improved approximation for the saturation voltage. These modifications result in excellent agreement with the experimental data for both n- and p-channel transistors having effective channel lengths as small as 0.5 μm. In contrast to previous models the agreement with the measured data is achieved by using a physically acceptable value for the charge carrier saturation velocity and a smaller number of fitting parameters.

    U2 - 10.1088/0031-8949/46/5/016

    DO - 10.1088/0031-8949/46/5/016

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