Enhanced model for short channel MOSFET's

Pekka Kuivalainen, Mikael Andersson, Simo Eränen, Hannu Ronkainen

    Research output: Contribution to journalArticle

    2 Citations (Scopus)

    Abstract

    The accuracy of the existing metal-oxide-semiconductor-field-effect-transistor (MOSFET) models used in simulations of the integrated circuits can be enhanced by restoring some of the device physics which has previously been eliminated in the original models.
    The model modifications include an improved treatment of mobility degradation phenomena and an improved approximation for the saturation voltage.
    These modifications result in excellent agreement with the experimental data for both n- and p-channel transistors having effective channel lengths as small as 0.5 μm. In contrast to previous models the agreement with the measured data is achieved by using a physically acceptable value for the charge carrier saturation velocity and a smaller number of fitting parameters.
    Original languageEnglish
    Pages (from-to)476-480
    JournalPhysica Scripta
    Volume46
    Issue number5
    DOIs
    Publication statusPublished - 1992
    MoE publication typeA1 Journal article-refereed

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