Enhanced model for short channel MOSFET's

Pekka Kuivalainen, Mikael Andersson, Simo Eränen, Hannu Ronkainen

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)

Abstract

The accuracy of the existing metal-oxide-semiconductor-field-effect-transistor (MOSFET) models used in simulations of the integrated circuits can be enhanced by restoring some of the device physics which has previously been eliminated in the original models.
The model modifications include an improved treatment of mobility degradation phenomena and an improved approximation for the saturation voltage.
These modifications result in excellent agreement with the experimental data for both n- and p-channel transistors having effective channel lengths as small as 0.5 μm. In contrast to previous models the agreement with the measured data is achieved by using a physically acceptable value for the charge carrier saturation velocity and a smaller number of fitting parameters.
Original languageEnglish
Pages (from-to)476-480
JournalPhysica Scripta
Volume46
Issue number5
DOIs
Publication statusPublished - 1992
MoE publication typeA1 Journal article-refereed

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Field-effect Transistor
metal oxide semiconductors
Oxides
Semiconductors
field effect transistors
Metals
Saturation
saturation
Integrated Circuits
Model
integrated circuits
charge carriers
Degradation
transistors
Voltage
Charge
Physics
Experimental Data
degradation
physics

Cite this

Kuivalainen, Pekka ; Andersson, Mikael ; Eränen, Simo ; Ronkainen, Hannu. / Enhanced model for short channel MOSFET's. In: Physica Scripta. 1992 ; Vol. 46, No. 5. pp. 476-480.
@article{a73fc618e61746c9a64d8227094ded78,
title = "Enhanced model for short channel MOSFET's",
abstract = "The accuracy of the existing metal-oxide-semiconductor-field-effect-transistor (MOSFET) models used in simulations of the integrated circuits can be enhanced by restoring some of the device physics which has previously been eliminated in the original models. The model modifications include an improved treatment of mobility degradation phenomena and an improved approximation for the saturation voltage. These modifications result in excellent agreement with the experimental data for both n- and p-channel transistors having effective channel lengths as small as 0.5 μm. In contrast to previous models the agreement with the measured data is achieved by using a physically acceptable value for the charge carrier saturation velocity and a smaller number of fitting parameters.",
author = "Pekka Kuivalainen and Mikael Andersson and Simo Er{\"a}nen and Hannu Ronkainen",
note = "Project code: PUO1008",
year = "1992",
doi = "10.1088/0031-8949/46/5/016",
language = "English",
volume = "46",
pages = "476--480",
journal = "Physica Scripta",
issn = "0031-8949",
publisher = "Institute of Physics IOP",
number = "5",

}

Kuivalainen, P, Andersson, M, Eränen, S & Ronkainen, H 1992, 'Enhanced model for short channel MOSFET's', Physica Scripta, vol. 46, no. 5, pp. 476-480. https://doi.org/10.1088/0031-8949/46/5/016

Enhanced model for short channel MOSFET's. / Kuivalainen, Pekka; Andersson, Mikael; Eränen, Simo; Ronkainen, Hannu.

In: Physica Scripta, Vol. 46, No. 5, 1992, p. 476-480.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Enhanced model for short channel MOSFET's

AU - Kuivalainen, Pekka

AU - Andersson, Mikael

AU - Eränen, Simo

AU - Ronkainen, Hannu

N1 - Project code: PUO1008

PY - 1992

Y1 - 1992

N2 - The accuracy of the existing metal-oxide-semiconductor-field-effect-transistor (MOSFET) models used in simulations of the integrated circuits can be enhanced by restoring some of the device physics which has previously been eliminated in the original models. The model modifications include an improved treatment of mobility degradation phenomena and an improved approximation for the saturation voltage. These modifications result in excellent agreement with the experimental data for both n- and p-channel transistors having effective channel lengths as small as 0.5 μm. In contrast to previous models the agreement with the measured data is achieved by using a physically acceptable value for the charge carrier saturation velocity and a smaller number of fitting parameters.

AB - The accuracy of the existing metal-oxide-semiconductor-field-effect-transistor (MOSFET) models used in simulations of the integrated circuits can be enhanced by restoring some of the device physics which has previously been eliminated in the original models. The model modifications include an improved treatment of mobility degradation phenomena and an improved approximation for the saturation voltage. These modifications result in excellent agreement with the experimental data for both n- and p-channel transistors having effective channel lengths as small as 0.5 μm. In contrast to previous models the agreement with the measured data is achieved by using a physically acceptable value for the charge carrier saturation velocity and a smaller number of fitting parameters.

U2 - 10.1088/0031-8949/46/5/016

DO - 10.1088/0031-8949/46/5/016

M3 - Article

VL - 46

SP - 476

EP - 480

JO - Physica Scripta

JF - Physica Scripta

SN - 0031-8949

IS - 5

ER -