Enhanced optical properties of in situ passivated near-surface A1xGa1-xAs/GaAs quantum wells

Harri Lipsanen, Markku Sopanen, M. Taskinen, J. Tulkki, Jouni Ahopelto

    Research output: Contribution to journalArticleScientificpeer-review

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    Abstract

    An epitaxial method for in situ passivation of epitaxial AlxGa1−xAs/GaAs surfaces is reported. The deposition of an ultrathin InP layer (about one monolayer) on the surface of AlxGa1−xAs/GaAs structures by metalorganic vapor phase epitaxy results in drastically reduced surface recombination. The effect is studied by low‐temperature photoluminescence of near‐surface Al0.22Ga0.78As/GaAs quantum wells where the top barrier thickness is varied from 0 to 50 nm. At the thicknesses of ≤5 nm, the intensity from passivated samples is more than four orders of magnitude larger than that obtained from unpassivated structures. For a passivated surface quantum well where InP is deposited directly onto the GaAs quantum well, we observe a blueshift of 15 meV and an intensity reduction of only a factor of 10 as compared to the luminescence from a quantum well placed at a depth of 50 nm from the surface.
    Original languageEnglish
    Pages (from-to)2216-2218
    Number of pages3
    JournalApplied Physics Letters
    Volume68
    Issue number16
    DOIs
    Publication statusPublished - 1996
    MoE publication typeA1 Journal article-refereed

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    quantum wells
    optical properties
    vapor phase epitaxy
    passivity
    luminescence
    photoluminescence

    Keywords

    • quantum wells

    Cite this

    Lipsanen, Harri ; Sopanen, Markku ; Taskinen, M. ; Tulkki, J. ; Ahopelto, Jouni. / Enhanced optical properties of in situ passivated near-surface A1xGa1-xAs/GaAs quantum wells. In: Applied Physics Letters. 1996 ; Vol. 68, No. 16. pp. 2216-2218.
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    title = "Enhanced optical properties of in situ passivated near-surface A1xGa1-xAs/GaAs quantum wells",
    abstract = "An epitaxial method for in situ passivation of epitaxial AlxGa1−xAs/GaAs surfaces is reported. The deposition of an ultrathin InP layer (about one monolayer) on the surface of AlxGa1−xAs/GaAs structures by metalorganic vapor phase epitaxy results in drastically reduced surface recombination. The effect is studied by low‐temperature photoluminescence of near‐surface Al0.22Ga0.78As/GaAs quantum wells where the top barrier thickness is varied from 0 to 50 nm. At the thicknesses of ≤5 nm, the intensity from passivated samples is more than four orders of magnitude larger than that obtained from unpassivated structures. For a passivated surface quantum well where InP is deposited directly onto the GaAs quantum well, we observe a blueshift of 15 meV and an intensity reduction of only a factor of 10 as compared to the luminescence from a quantum well placed at a depth of 50 nm from the surface.",
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    author = "Harri Lipsanen and Markku Sopanen and M. Taskinen and J. Tulkki and Jouni Ahopelto",
    year = "1996",
    doi = "10.1063/1.115863",
    language = "English",
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    journal = "Applied Physics Letters",
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    Enhanced optical properties of in situ passivated near-surface A1xGa1-xAs/GaAs quantum wells. / Lipsanen, Harri; Sopanen, Markku; Taskinen, M.; Tulkki, J.; Ahopelto, Jouni.

    In: Applied Physics Letters, Vol. 68, No. 16, 1996, p. 2216-2218.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Enhanced optical properties of in situ passivated near-surface A1xGa1-xAs/GaAs quantum wells

    AU - Lipsanen, Harri

    AU - Sopanen, Markku

    AU - Taskinen, M.

    AU - Tulkki, J.

    AU - Ahopelto, Jouni

    PY - 1996

    Y1 - 1996

    N2 - An epitaxial method for in situ passivation of epitaxial AlxGa1−xAs/GaAs surfaces is reported. The deposition of an ultrathin InP layer (about one monolayer) on the surface of AlxGa1−xAs/GaAs structures by metalorganic vapor phase epitaxy results in drastically reduced surface recombination. The effect is studied by low‐temperature photoluminescence of near‐surface Al0.22Ga0.78As/GaAs quantum wells where the top barrier thickness is varied from 0 to 50 nm. At the thicknesses of ≤5 nm, the intensity from passivated samples is more than four orders of magnitude larger than that obtained from unpassivated structures. For a passivated surface quantum well where InP is deposited directly onto the GaAs quantum well, we observe a blueshift of 15 meV and an intensity reduction of only a factor of 10 as compared to the luminescence from a quantum well placed at a depth of 50 nm from the surface.

    AB - An epitaxial method for in situ passivation of epitaxial AlxGa1−xAs/GaAs surfaces is reported. The deposition of an ultrathin InP layer (about one monolayer) on the surface of AlxGa1−xAs/GaAs structures by metalorganic vapor phase epitaxy results in drastically reduced surface recombination. The effect is studied by low‐temperature photoluminescence of near‐surface Al0.22Ga0.78As/GaAs quantum wells where the top barrier thickness is varied from 0 to 50 nm. At the thicknesses of ≤5 nm, the intensity from passivated samples is more than four orders of magnitude larger than that obtained from unpassivated structures. For a passivated surface quantum well where InP is deposited directly onto the GaAs quantum well, we observe a blueshift of 15 meV and an intensity reduction of only a factor of 10 as compared to the luminescence from a quantum well placed at a depth of 50 nm from the surface.

    KW - quantum wells

    U2 - 10.1063/1.115863

    DO - 10.1063/1.115863

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    SP - 2216

    EP - 2218

    JO - Applied Physics Letters

    JF - Applied Physics Letters

    SN - 0003-6951

    IS - 16

    ER -