Enhanced optical properties of in situ passivated near-surface A1xGa1-xAs/GaAs quantum wells

Harri Lipsanen, Markku Sopanen, M. Taskinen, J. Tulkki, Jouni Ahopelto

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Abstract

An epitaxial method for in situ passivation of epitaxial AlxGa1−xAs/GaAs surfaces is reported. The deposition of an ultrathin InP layer (about one monolayer) on the surface of AlxGa1−xAs/GaAs structures by metalorganic vapor phase epitaxy results in drastically reduced surface recombination. The effect is studied by low‐temperature photoluminescence of near‐surface Al0.22Ga0.78As/GaAs quantum wells where the top barrier thickness is varied from 0 to 50 nm. At the thicknesses of ≤5 nm, the intensity from passivated samples is more than four orders of magnitude larger than that obtained from unpassivated structures. For a passivated surface quantum well where InP is deposited directly onto the GaAs quantum well, we observe a blueshift of 15 meV and an intensity reduction of only a factor of 10 as compared to the luminescence from a quantum well placed at a depth of 50 nm from the surface.
Original languageEnglish
Pages (from-to)2216-2218
Number of pages3
JournalApplied Physics Letters
Volume68
Issue number16
DOIs
Publication statusPublished - 1996
MoE publication typeA1 Journal article-refereed

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quantum wells
optical properties
vapor phase epitaxy
passivity
luminescence
photoluminescence

Keywords

  • quantum wells

Cite this

Lipsanen, Harri ; Sopanen, Markku ; Taskinen, M. ; Tulkki, J. ; Ahopelto, Jouni. / Enhanced optical properties of in situ passivated near-surface A1xGa1-xAs/GaAs quantum wells. In: Applied Physics Letters. 1996 ; Vol. 68, No. 16. pp. 2216-2218.
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abstract = "An epitaxial method for in situ passivation of epitaxial AlxGa1−xAs/GaAs surfaces is reported. The deposition of an ultrathin InP layer (about one monolayer) on the surface of AlxGa1−xAs/GaAs structures by metalorganic vapor phase epitaxy results in drastically reduced surface recombination. The effect is studied by low‐temperature photoluminescence of near‐surface Al0.22Ga0.78As/GaAs quantum wells where the top barrier thickness is varied from 0 to 50 nm. At the thicknesses of ≤5 nm, the intensity from passivated samples is more than four orders of magnitude larger than that obtained from unpassivated structures. For a passivated surface quantum well where InP is deposited directly onto the GaAs quantum well, we observe a blueshift of 15 meV and an intensity reduction of only a factor of 10 as compared to the luminescence from a quantum well placed at a depth of 50 nm from the surface.",
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Enhanced optical properties of in situ passivated near-surface A1xGa1-xAs/GaAs quantum wells. / Lipsanen, Harri; Sopanen, Markku; Taskinen, M.; Tulkki, J.; Ahopelto, Jouni.

In: Applied Physics Letters, Vol. 68, No. 16, 1996, p. 2216-2218.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Enhanced optical properties of in situ passivated near-surface A1xGa1-xAs/GaAs quantum wells

AU - Lipsanen, Harri

AU - Sopanen, Markku

AU - Taskinen, M.

AU - Tulkki, J.

AU - Ahopelto, Jouni

PY - 1996

Y1 - 1996

N2 - An epitaxial method for in situ passivation of epitaxial AlxGa1−xAs/GaAs surfaces is reported. The deposition of an ultrathin InP layer (about one monolayer) on the surface of AlxGa1−xAs/GaAs structures by metalorganic vapor phase epitaxy results in drastically reduced surface recombination. The effect is studied by low‐temperature photoluminescence of near‐surface Al0.22Ga0.78As/GaAs quantum wells where the top barrier thickness is varied from 0 to 50 nm. At the thicknesses of ≤5 nm, the intensity from passivated samples is more than four orders of magnitude larger than that obtained from unpassivated structures. For a passivated surface quantum well where InP is deposited directly onto the GaAs quantum well, we observe a blueshift of 15 meV and an intensity reduction of only a factor of 10 as compared to the luminescence from a quantum well placed at a depth of 50 nm from the surface.

AB - An epitaxial method for in situ passivation of epitaxial AlxGa1−xAs/GaAs surfaces is reported. The deposition of an ultrathin InP layer (about one monolayer) on the surface of AlxGa1−xAs/GaAs structures by metalorganic vapor phase epitaxy results in drastically reduced surface recombination. The effect is studied by low‐temperature photoluminescence of near‐surface Al0.22Ga0.78As/GaAs quantum wells where the top barrier thickness is varied from 0 to 50 nm. At the thicknesses of ≤5 nm, the intensity from passivated samples is more than four orders of magnitude larger than that obtained from unpassivated structures. For a passivated surface quantum well where InP is deposited directly onto the GaAs quantum well, we observe a blueshift of 15 meV and an intensity reduction of only a factor of 10 as compared to the luminescence from a quantum well placed at a depth of 50 nm from the surface.

KW - quantum wells

U2 - 10.1063/1.115863

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EP - 2218

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

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