Enhanced optical properties of in situ passivated near-surface A1xGa1-xAs/GaAs quantum wells

Harri Lipsanen; Markku Sopanen; M. Taskinen; J. Tulkki; Jouni Ahopelto

doi:10.1063/1.115863

Enhanced optical properties of in situ passivated near-surface A1_xGa_1-xAs/GaAs quantum wells

Harri Lipsanen, Markku Sopanen, M. Taskinen, J. Tulkki, Jouni Ahopelto

Helsinki University of Technology

Research output: Contribution to journal › Article › Scientific › peer-review

23 Citations (Scopus)

Abstract

An epitaxial method for in situ passivation of epitaxial Al_xGa_1−xAs/GaAs surfaces is reported. The deposition of an ultrathin InP layer (about one monolayer) on the surface of Al_xGa_1−xAs/GaAs structures by metalorganic vapor phase epitaxy results in drastically reduced surface recombination. The effect is studied by low‐temperature photoluminescence of near‐surface Al_0.22Ga_0.78As/GaAs quantum wells where the top barrier thickness is varied from 0 to 50 nm. At the thicknesses of ≤5 nm, the intensity from passivated samples is more than four orders of magnitude larger than that obtained from unpassivated structures. For a passivated surface quantum well where InP is deposited directly onto the GaAs quantum well, we observe a blueshift of 15 meV and an intensity reduction of only a factor of 10 as compared to the luminescence from a quantum well placed at a depth of 50 nm from the surface.

Original language	English
Pages (from-to)	2216-2218
Number of pages	3
Journal	Applied Physics Letters
Volume	68
Issue number	16
DOIs	https://doi.org/10.1063/1.115863
Publication status	Published - 1996
MoE publication type	A1 Journal article-refereed

Keywords

quantum wells

Access to Document

10.1063/1.115863

Cite this

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title = "Enhanced optical properties of in situ passivated near-surface A1xGa1-xAs/GaAs quantum wells",

abstract = "An epitaxial method for in situ passivation of epitaxial AlxGa1−xAs/GaAs surfaces is reported. The deposition of an ultrathin InP layer (about one monolayer) on the surface of AlxGa1−xAs/GaAs structures by metalorganic vapor phase epitaxy results in drastically reduced surface recombination. The effect is studied by low‐temperature photoluminescence of near‐surface Al0.22Ga0.78As/GaAs quantum wells where the top barrier thickness is varied from 0 to 50 nm. At the thicknesses of ≤5 nm, the intensity from passivated samples is more than four orders of magnitude larger than that obtained from unpassivated structures. For a passivated surface quantum well where InP is deposited directly onto the GaAs quantum well, we observe a blueshift of 15 meV and an intensity reduction of only a factor of 10 as compared to the luminescence from a quantum well placed at a depth of 50 nm from the surface.",

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year = "1996",

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T1 - Enhanced optical properties of in situ passivated near-surface A1xGa1-xAs/GaAs quantum wells

AU - Lipsanen, Harri

AU - Sopanen, Markku

AU - Taskinen, M.

AU - Tulkki, J.

AU - Ahopelto, Jouni

PY - 1996

Y1 - 1996

N2 - An epitaxial method for in situ passivation of epitaxial AlxGa1−xAs/GaAs surfaces is reported. The deposition of an ultrathin InP layer (about one monolayer) on the surface of AlxGa1−xAs/GaAs structures by metalorganic vapor phase epitaxy results in drastically reduced surface recombination. The effect is studied by low‐temperature photoluminescence of near‐surface Al0.22Ga0.78As/GaAs quantum wells where the top barrier thickness is varied from 0 to 50 nm. At the thicknesses of ≤5 nm, the intensity from passivated samples is more than four orders of magnitude larger than that obtained from unpassivated structures. For a passivated surface quantum well where InP is deposited directly onto the GaAs quantum well, we observe a blueshift of 15 meV and an intensity reduction of only a factor of 10 as compared to the luminescence from a quantum well placed at a depth of 50 nm from the surface.

AB - An epitaxial method for in situ passivation of epitaxial AlxGa1−xAs/GaAs surfaces is reported. The deposition of an ultrathin InP layer (about one monolayer) on the surface of AlxGa1−xAs/GaAs structures by metalorganic vapor phase epitaxy results in drastically reduced surface recombination. The effect is studied by low‐temperature photoluminescence of near‐surface Al0.22Ga0.78As/GaAs quantum wells where the top barrier thickness is varied from 0 to 50 nm. At the thicknesses of ≤5 nm, the intensity from passivated samples is more than four orders of magnitude larger than that obtained from unpassivated structures. For a passivated surface quantum well where InP is deposited directly onto the GaAs quantum well, we observe a blueshift of 15 meV and an intensity reduction of only a factor of 10 as compared to the luminescence from a quantum well placed at a depth of 50 nm from the surface.

KW - quantum wells

U2 - 10.1063/1.115863

DO - 10.1063/1.115863

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JO - Applied Physics Letters

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