Keyphrases
In Situ
100%
GaAs Quantum Well
100%
Enhanced Optical Properties
100%
Passivated
100%
Epitaxial
66%
Low Temperature
33%
Order of Magnitude
33%
Ultrathin
33%
Surface Recombination
33%
Luminescence
33%
Photoluminescence
33%
Barrier Thickness
33%
Blue Shift
33%
Quantum Well
33%
GaAs Surface
33%
Metal Organic Vapor Phase Epitaxy (MOVPE)
33%
Intensity Reduction
33%
In Situ Passivation
33%
Passivated Surface
33%
Surface Quantum Well
33%
GaAs Structure
33%
INIS
surfaces
100%
optical properties
100%
quantum wells
100%
gallium arsenides
100%
thickness
33%
indium phosphides
33%
epitaxy
33%
layers
16%
comparative evaluations
16%
barriers
16%
reduction
16%
deposition
16%
depth
16%
photoluminescence
16%
luminescence
16%
recombination
16%
passivation
16%
vapor phase epitaxy
16%
Material Science
Gallium Arsenide
100%
Quantum Well
100%
Optical Property
100%
Surface (Surface Science)
100%
Monolayers
16%
Luminescence
16%
Photoluminescence
16%
Vapor Phase Epitaxy
16%
Engineering
Gallium Arsenide
100%
Quantum Well
100%
Passivation
20%
Blueshift
20%
Monolayers
20%
Physics
Quantum Wells
100%
Optical Property
100%
Metalorganic Vapor Phase Epitaxy
20%
Photoluminescence
20%