Enhanced optoelectronic performance of plasma electrolytic oxidized monocrystalline silicon using rGO incorporation

Sema Ebrahimi; Aidin Bordbar-Khiabani; Benyamin Yarmand

doi:10.1016/j.matlet.2018.12.086

Enhanced optoelectronic performance of plasma electrolytic oxidized monocrystalline silicon using rGO incorporation

Sema Ebrahimi
, Aidin Bordbar-Khiabani
, Benyamin Yarmand^*

^*Corresponding author for this work

Not published at VTT

Materials and Energy Research Center (MERC)

Research output: Contribution to journal › Article › Scientific › peer-review

24 Citations (Scopus)

Abstract

rGO/SiO₂ composite coating was successfully prepared by plasma electrolyte oxidation (PEO) process on monocrystalline silicon (mc-Si) substrate. Investigating the effect of rGO incorporation into the SiO₂ coating revealed that the addition of rGO leads to a significant increase in the photo-trapping ability due to the high specific surface area and excellent electron transfer efficiency. The PL intensity of the composite sample was found to decrease, which signified the suspension of the electron-hole pairs’ recombination. As a result, the photocurrent gain of the composite coating enhanced about 5.5 times. Likewise, the time-response switching featured an over two-fold increase for the rGO/SiO₂ coating, impressively.

Original language	English
Pages (from-to)	151-154
Number of pages	4
Journal	Materials Letters
Volume	239
DOIs	https://doi.org/10.1016/j.matlet.2018.12.086
Publication status	Published - 15 Mar 2019
MoE publication type	A1 Journal article-refereed

Funding

This research work has been supported with research grant (NO.: 247383 ) by Materials and Energy Research Center (MERC) , Karaj, Iran.

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Composite materials
Optoelectrical properties
Plasma electrolyte oxidation
rGO/SiO composite
Semiconductors

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10.1016/j.matlet.2018.12.086

Cite this

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title = "Enhanced optoelectronic performance of plasma electrolytic oxidized monocrystalline silicon using rGO incorporation",

abstract = "rGO/SiO2 composite coating was successfully prepared by plasma electrolyte oxidation (PEO) process on monocrystalline silicon (mc-Si) substrate. Investigating the effect of rGO incorporation into the SiO2 coating revealed that the addition of rGO leads to a significant increase in the photo-trapping ability due to the high specific surface area and excellent electron transfer efficiency. The PL intensity of the composite sample was found to decrease, which signified the suspension of the electron-hole pairs{\textquoteright} recombination. As a result, the photocurrent gain of the composite coating enhanced about 5.5 times. Likewise, the time-response switching featured an over two-fold increase for the rGO/SiO2 coating, impressively.",

keywords = "Composite materials, Optoelectrical properties, Plasma electrolyte oxidation, rGO/SiO composite, Semiconductors",

author = "Sema Ebrahimi and Aidin Bordbar-Khiabani and Benyamin Yarmand",

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year = "2019",

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doi = "10.1016/j.matlet.2018.12.086",

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journal = "Materials Letters",

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TY - JOUR

T1 - Enhanced optoelectronic performance of plasma electrolytic oxidized monocrystalline silicon using rGO incorporation

AU - Ebrahimi, Sema

AU - Bordbar-Khiabani, Aidin

AU - Yarmand, Benyamin

PY - 2019/3/15

Y1 - 2019/3/15

N2 - rGO/SiO2 composite coating was successfully prepared by plasma electrolyte oxidation (PEO) process on monocrystalline silicon (mc-Si) substrate. Investigating the effect of rGO incorporation into the SiO2 coating revealed that the addition of rGO leads to a significant increase in the photo-trapping ability due to the high specific surface area and excellent electron transfer efficiency. The PL intensity of the composite sample was found to decrease, which signified the suspension of the electron-hole pairs’ recombination. As a result, the photocurrent gain of the composite coating enhanced about 5.5 times. Likewise, the time-response switching featured an over two-fold increase for the rGO/SiO2 coating, impressively.

AB - rGO/SiO2 composite coating was successfully prepared by plasma electrolyte oxidation (PEO) process on monocrystalline silicon (mc-Si) substrate. Investigating the effect of rGO incorporation into the SiO2 coating revealed that the addition of rGO leads to a significant increase in the photo-trapping ability due to the high specific surface area and excellent electron transfer efficiency. The PL intensity of the composite sample was found to decrease, which signified the suspension of the electron-hole pairs’ recombination. As a result, the photocurrent gain of the composite coating enhanced about 5.5 times. Likewise, the time-response switching featured an over two-fold increase for the rGO/SiO2 coating, impressively.

KW - Composite materials

KW - Optoelectrical properties

KW - Plasma electrolyte oxidation

KW - rGO/SiO composite

KW - Semiconductors

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DO - 10.1016/j.matlet.2018.12.086

M3 - Article

AN - SCOPUS:85059341635

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VL - 239

SP - 151

EP - 154

JO - Materials Letters

JF - Materials Letters

ER -

Enhanced optoelectronic performance of plasma electrolytic oxidized monocrystalline silicon using rGO incorporation

Abstract

Funding

UN SDGs

Keywords

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