Enhancement of near-UV GaN LED light extraction efficiency by GaN/sapphire template patterning

Muhammad Ali; Lauri Riuttanen; M Kruse; Sami Suihkonen; A.E. Romanov; Pekka T. Törmä; Markku Sopanen; Harri Lipsanen; M.A. Odnoblyudov; V.E. Bougrov

doi:10.1088/0268-1242/27/8/082002

Enhancement of near-UV GaN LED light extraction efficiency by GaN/sapphire template patterning

Muhammad Ali, Lauri Riuttanen, M Kruse, Sami Suihkonen, A.E. Romanov, Pekka T. Törmä, Markku Sopanen, Harri Lipsanen, M.A. Odnoblyudov, V.E. Bougrov

Not published at VTT

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	English
Article number	082002
Number of pages	5
Journal	Semiconductor Science and Technology
Volume	27
Issue number	8
DOIs	https://doi.org/10.1088/0268-1242/27/8/082002
Publication status	Published - 2012
MoE publication type	A1 Journal article-refereed

Access to Document

10.1088/0268-1242/27/8/082002

Cite this

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title = "Enhancement of near-UV GaN LED light extraction efficiency by GaN/sapphire template patterning",

author = "Muhammad Ali and Lauri Riuttanen and M Kruse and Sami Suihkonen and A.E. Romanov and T{\"o}rm{\"a}, \{Pekka T.\} and Markku Sopanen and Harri Lipsanen and M.A. Odnoblyudov and V.E. Bougrov",

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T1 - Enhancement of near-UV GaN LED light extraction efficiency by GaN/sapphire template patterning

AU - Ali, Muhammad

AU - Riuttanen, Lauri

AU - Kruse, M

AU - Suihkonen, Sami

AU - Romanov, A.E.

AU - Törmä, Pekka T.

AU - Sopanen, Markku

AU - Lipsanen, Harri

AU - Odnoblyudov, M.A.

AU - Bougrov, V.E.

N1 - M1 - 082002

PY - 2012

Y1 - 2012

U2 - 10.1088/0268-1242/27/8/082002

DO - 10.1088/0268-1242/27/8/082002

M3 - Article

SN - 0268-1242

VL - 27

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 8

M1 - 082002

ER -