Environment-assisted tunneling as an origin of the dynes density of states

J.P. Pekola, V.F. Maisi, S. Kafanov, N. Chekurov, A. Kemppinen, Y.A. Pashkin, O-P. Saira, M. Möttönen, J.S. Tsai

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Abstract

We show that the effect of a high-temperature environment in current transport through a normal metal–insulator–superconductor tunnel junction can be described by an effective density of states in the superconductor. In the limit of a resistive low-Ohmic environment, this density of states reduces into the well-known Dynes form. Our theoretical result is supported by experiments in engineered environments. We apply our findings to improve the performance of a single-electron turnstile, a potential candidate for a metrological current source.
Original languageEnglish
Article number026803
JournalPhysical Review Letters
Volume105
DOIs
Publication statusPublished - 2010
MoE publication typeA1 Journal article-refereed

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Pekola, J. P., Maisi, V. F., Kafanov, S., Chekurov, N., Kemppinen, A., Pashkin, Y. A., Saira, O-P., Möttönen, M., & Tsai, J. S. (2010). Environment-assisted tunneling as an origin of the dynes density of states. Physical Review Letters, 105, [026803]. https://doi.org/10.1103/PhysRevLett.105.026803