Epi-Gd₂O₃-MOSHEMT: A Potential Solution Toward Leveraging the Application of /Si AlGaN/GaNHEMT With Improved ION/IOFF Operating at 473 K
- Ritam Sarkar
- , Bhanu B. Upadhyay
- , Swagata Bhunia
- , Ravindra S. Pokharia
- , Dhiman Nag
- , S. Surapaneni
- , Jori Lemettinen
- , Sami Suihkonen
- , Philipp Gribisch
- , Hans Jorg Osten
- , Swaroop Ganguly
- , Dipankar Saha
- , Apurba Laha*
*Corresponding author for this work
- Indian Institute of Technology Bombay
- Leibniz University Hannover
- Aalto University
Research output: Contribution to journal › Article › Scientific › peer-review
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