Erbium-doped planar waveguides fabricated with atomic layer deposition

Kimmo Solehmainen, Markku Kapulainen, Päivi Heimala

    Research output: Chapter in Book/Report/Conference proceedingConference abstract in proceedingsScientific

    Abstract

    Er-doped waveguides can be used to compensate for the losses encountered by the optical signal around 1550 nm. In this work Er-doped Al2O3 waveguides were realised with the atomic layer deposition (ALD) method. Two microns thick Er-doped aluminium oxide layers were grown with ALD on silica-coated silicon wafers. The ridge-type waveguides were patterned using photolithography and wet etching. The Er-doping was done in situ during the ALD process. Resulted single-mode ridge-type waveguides were measured to obtain optical absorption, emission, fluorescence lifetime, and gain characteristics. Optical excitation of erbium ions was done using 980 nm wavelength.
    Original languageEnglish
    Title of host publicationNorthern Optics 2003
    EditorsEero Noponen
    PublisherTeknillinen korkeakoulu
    ISBN (Print)951-22-6596-6
    Publication statusPublished - 2003
    MoE publication typeNot Eligible
    EventNorthern Optics 2003: Joint Conference of the Optical Societies of Denmark, Finland, Norway and Sweden - Espoo, Finland
    Duration: 16 Jun 200318 Jun 2003

    Publication series

    SeriesHelsinki University of Technology Publications in Engineering Physics A
    Number822
    ISSN1456-3320

    Conference

    ConferenceNorthern Optics 2003
    Country/TerritoryFinland
    CityEspoo
    Period16/06/0318/06/03

    Keywords

    • aluminium oxide
    • atomic layer deposition
    • erbium
    • optical amplification
    • optical waveguides

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