Erbium-doped planar waveguides fabricated with atomic layer deposition

Kimmo Solehmainen, Markku Kapulainen, Päivi Heimala

Research output: Chapter in Book/Report/Conference proceedingConference abstract in proceedingsScientific

Abstract

Er-doped waveguides can be used to compensate for the losses encountered by the optical signal around 1550 nm. In this work Er-doped Al2O3 waveguides were realised with the atomic layer deposition (ALD) method. Two microns thick Er-doped aluminium oxide layers were grown with ALD on silica-coated silicon wafers. The ridge-type waveguides were patterned using photolithography and wet etching. The Er-doping was done in situ during the ALD process. Resulted single-mode ridge-type waveguides were measured to obtain optical absorption, emission, fluorescence lifetime, and gain characteristics. Optical excitation of erbium ions was done using 980 nm wavelength.
Original languageEnglish
Title of host publicationNorthern Optics 2003
EditorsEero Noponen
Publication statusPublished - 2003
MoE publication typeNot Eligible
EventNorthern Optics 2003: Joint Conference of the Optical Societies of Denmark, Finland, Norway and Sweden - Espoo, Finland
Duration: 16 Jun 200318 Jun 2003

Publication series

SeriesHelsinki University of Technology Publications in Engineering Physics A
Number822
ISSN1456-3320

Conference

ConferenceNorthern Optics 2003
CountryFinland
CityEspoo
Period16/06/0318/06/03

Keywords

  • aluminium oxide
  • atomic layer deposition
  • erbium
  • optical amplification
  • optical waveguides

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  • Cite this

    Solehmainen, K., Kapulainen, M., & Heimala, P. (2003). Erbium-doped planar waveguides fabricated with atomic layer deposition. In E. Noponen (Ed.), Northern Optics 2003 Helsinki University of Technology Publications in Engineering Physics A, No. 822