Er-doped waveguides can be used to compensate for the losses encountered by the optical signal around 1550 nm. In this work Er-doped Al2O3 waveguides were realised with the atomic layer deposition (ALD) method. Two microns thick Er-doped aluminium oxide layers were grown with ALD on silica-coated silicon wafers. The ridge-type waveguides were patterned using photolithography and wet etching. The Er-doping was done in situ during the ALD process. Resulted single-mode ridge-type waveguides were measured to obtain optical absorption, emission, fluorescence lifetime, and gain characteristics. Optical excitation of erbium ions was done using 980 nm wavelength.
|Series||Helsinki University of Technology Publications in Engineering Physics A|
|Conference||Northern Optics 2003|
|Period||16/06/03 → 18/06/03|
- aluminium oxide
- atomic layer deposition
- optical amplification
- optical waveguides