Erbium-doped waveguides fabricated with atomic layer deposition method

Kimmo Solehmainen (Corresponding Author), Markku Kapulainen, Päivi Heimala, Kirsi Polamo

Research output: Contribution to journalArticleScientificpeer-review

35 Citations (Scopus)

Abstract

Atomic layer deposition was used in preparing erbium (Er)-doped waveguides. Ridge-type Er-doped Al2O3 waveguides were patterned on silica-coated silicon wafers using photolithography and wet etching. Optical absorption, emission, fluorescence lifetime, and signal enhancement measurements were performed. Polarization dependence of the absorption spectrum and birefringence of the waveguide were measured. The material showed strong absorption and wide emission spectrum around 1530 nm with full-width at half-maximum of 52 nm. Signal enhancement of 6 dB was measured for a 3.9-cm-long waveguide.
Original languageEnglish
Pages (from-to)194 - 196
Number of pages3
JournalIEEE Photonics Technology Letters
Volume16
Issue number1
DOIs
Publication statusPublished - 2004
MoE publication typeA1 Journal article-refereed

Fingerprint

Erbium
Atomic layer deposition
atomic layer epitaxy
erbium
Waveguides
waveguides
Wet etching
augmentation
Photolithography
photolithography
Birefringence
Full width at half maximum
Silicon wafers
Silicon Dioxide
Light absorption
birefringence
ridges
Absorption spectra
emission spectra
optical absorption

Cite this

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abstract = "Atomic layer deposition was used in preparing erbium (Er)-doped waveguides. Ridge-type Er-doped Al2O3 waveguides were patterned on silica-coated silicon wafers using photolithography and wet etching. Optical absorption, emission, fluorescence lifetime, and signal enhancement measurements were performed. Polarization dependence of the absorption spectrum and birefringence of the waveguide were measured. The material showed strong absorption and wide emission spectrum around 1530 nm with full-width at half-maximum of 52 nm. Signal enhancement of 6 dB was measured for a 3.9-cm-long waveguide.",
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journal = "IEEE Photonics Technology Letters",
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Erbium-doped waveguides fabricated with atomic layer deposition method. / Solehmainen, Kimmo (Corresponding Author); Kapulainen, Markku; Heimala, Päivi; Polamo, Kirsi.

In: IEEE Photonics Technology Letters, Vol. 16, No. 1, 2004, p. 194 - 196.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Erbium-doped waveguides fabricated with atomic layer deposition method

AU - Solehmainen, Kimmo

AU - Kapulainen, Markku

AU - Heimala, Päivi

AU - Polamo, Kirsi

PY - 2004

Y1 - 2004

N2 - Atomic layer deposition was used in preparing erbium (Er)-doped waveguides. Ridge-type Er-doped Al2O3 waveguides were patterned on silica-coated silicon wafers using photolithography and wet etching. Optical absorption, emission, fluorescence lifetime, and signal enhancement measurements were performed. Polarization dependence of the absorption spectrum and birefringence of the waveguide were measured. The material showed strong absorption and wide emission spectrum around 1530 nm with full-width at half-maximum of 52 nm. Signal enhancement of 6 dB was measured for a 3.9-cm-long waveguide.

AB - Atomic layer deposition was used in preparing erbium (Er)-doped waveguides. Ridge-type Er-doped Al2O3 waveguides were patterned on silica-coated silicon wafers using photolithography and wet etching. Optical absorption, emission, fluorescence lifetime, and signal enhancement measurements were performed. Polarization dependence of the absorption spectrum and birefringence of the waveguide were measured. The material showed strong absorption and wide emission spectrum around 1530 nm with full-width at half-maximum of 52 nm. Signal enhancement of 6 dB was measured for a 3.9-cm-long waveguide.

U2 - 10.1109/LPT.2003.820484

DO - 10.1109/LPT.2003.820484

M3 - Article

VL - 16

SP - 194

EP - 196

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 1

ER -