Erratum: High-frequency mechanical excitation of a silicon nanostring with piezoelectric aluminum nitride layers (Physical Review Applied (2020) 14 (014054) DOI: 10.1103/PhysRevApplied.14.014054)

Alessandro Pitanti, Tapani Makkonen, Martin F. Colombano, Simone Zanotto, Leonardo Vicarelli, Marco Cecchini, Amadeu Griol, Daniel Navarro-Urrios, Clivia Sotomayor-Torres, Alejandro Martinez, Jouni Ahopelto

Research output: Contribution to journalOther journal contributionScientificpeer-review

Abstract

We report on a minor correction in our article: “High frequency mechanical excitation of a silicon nanostring with piezoelectric aluminum nitride layers”. The sentence at page 4, starting at line 13 to the last, contains a mistake in the rescaling factor to compare single-frequency to multi-frequency measurements. The corrected sentence reads as: The total, integrated voltage set in each window is of 3.5 VRMS; to compare the result with the one given by the monochromatic, single frequency 1 GHz tone, one should consider that the signal is normalized considering the peak envelope power voltage equally spread on each excitation window. Scaling opportunely the single frequency measurement for a factor v2/n times the voltages ratio, the ~ 300 pm displacement amplitude at 1 GHz reported in Fig. 3 should then translate to roughly 7 pm at the same frequency. Note that our correction does not affect the figures, the results nor the conclusions of our manuscript.

Original languageEnglish
Article number039901
JournalPhysical Review Applied
Volume17
Issue number3
DOIs
Publication statusPublished - Mar 2022
MoE publication typeA1 Journal article-refereed

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