Abstract
The dispersion curves of Lamb-wave modes propagating along a multilayer
structure are important for the operation of thin-film bulk acoustic
wave (BAW) devices. For instance, the behavior of the side resonances
that may contaminate the electrical response of a thin-film BAW
resonator depends on the dispersion relation of the layer stack. Because
the dispersion behavior depends on the materials parameters (and
thicknesses) of the layers in the structure, measurement of the
dispersion curves provides a tool for determining the materials
parameters of thin films. We have determined the dispersion curves for a
multilayer structure through measuring the mechanical displacement
profiles over the top electrode of a thin-film BAW resonator at several
frequencies using a homodyne Michelson laser interferometer. The layer
thicknesses are obtained using scanning electron microscope (SEM)
measurements. In the numerical computation of the dispersion curves, the
piezoelectricity and full anisotropy of the materials are taken into
account. The materials parameters of the piezoelectric layer are
determined through fitting the measured and computed dispersion curves.
Original language | English |
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Pages (from-to) | 42 - 51 |
Number of pages | 10 |
Journal | IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control |
Volume | 51 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2004 |
MoE publication type | A1 Journal article-refereed |
Keywords
- thin films
- thin film devices
- thin-film bulk acoustic wave devices
- BAW
- BAW resonators