(Et3Si)2Se as a precursor for atomic layer deposition: growth analysis of thermoelectric Bi2Se3

Tiina Sarnet; Timo Hatanpää; Marko Vehkamäki; Timo Flyktman; Jouni Ahopelto; Kenichiro Mizohata; Mikko Ritala; Markku Leskelä

doi:10.1039/c5tc00533g

(Et3Si)2Se as a precursor for atomic layer deposition: growth analysis of thermoelectric Bi2Se3

Tiina Sarnet (Corresponding Author), Timo Hatanpää, Marko Vehkamäki, Timo Flyktman, Jouni Ahopelto, Kenichiro Mizohata, Mikko Ritala, Markku Leskelä

University of Helsinki

Research output: Contribution to journal › Article › Scientific › peer-review

14 Citations (Scopus)

Abstract

An atomic layer deposition (ALD) process was developed for an important thermoelectric material Bi2Se3 utilizing dechlorosilylation reactions between BiCl3 and (Et3Si)2Se precursors. The applicability of this alkylsilyl selenide precursor was confirmed, as reactions with BiCl3 produced good quality thin films with low impurity contents. Saturation of the growth rate with regards to the pulse lengths of both precursors indicated that the Bi2Se3 process had characteristic ALD properties. Also, the film thickness corresponded linearly with increasing number of deposition cycles. No ALD window was discovered and the growth rates decreased significantly with increasing temperatures, similarly to other ALD processes utilizing alkylsilyl chalcogenide precursors. Nevertheless, high growth rates of 1.6 Å per cycle occurred at 160 °C. In addition, a good thermoelectric response was shown.

Original language	English
Pages (from-to)	4820-4828
Journal	Journal of Materials Chemistry C
Volume	3
Issue number	18
DOIs	https://doi.org/10.1039/c5tc00533g
Publication status	Published - 2015
MoE publication type	A1 Journal article-refereed

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title = "(Et3Si)2Se as a precursor for atomic layer deposition: growth analysis of thermoelectric Bi2Se3",

abstract = "An atomic layer deposition (ALD) process was developed for an important thermoelectric material Bi2Se3 utilizing dechlorosilylation reactions between BiCl3 and (Et3Si)2Se precursors. The applicability of this alkylsilyl selenide precursor was confirmed, as reactions with BiCl3 produced good quality thin films with low impurity contents. Saturation of the growth rate with regards to the pulse lengths of both precursors indicated that the Bi2Se3 process had characteristic ALD properties. Also, the film thickness corresponded linearly with increasing number of deposition cycles. No ALD window was discovered and the growth rates decreased significantly with increasing temperatures, similarly to other ALD processes utilizing alkylsilyl chalcogenide precursors. Nevertheless, high growth rates of 1.6 {\AA} per cycle occurred at 160 °C. In addition, a good thermoelectric response was shown.",

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doi = "10.1039/c5tc00533g",

language = "English",

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T1 - (Et3Si)2Se as a precursor for atomic layer deposition: growth analysis of thermoelectric Bi2Se3

AU - Sarnet, Tiina

AU - Hatanpää, Timo

AU - Vehkamäki, Marko

AU - Flyktman, Timo

AU - Ahopelto, Jouni

AU - Mizohata, Kenichiro

AU - Ritala, Mikko

AU - Leskelä, Markku

PY - 2015

Y1 - 2015

N2 - An atomic layer deposition (ALD) process was developed for an important thermoelectric material Bi2Se3 utilizing dechlorosilylation reactions between BiCl3 and (Et3Si)2Se precursors. The applicability of this alkylsilyl selenide precursor was confirmed, as reactions with BiCl3 produced good quality thin films with low impurity contents. Saturation of the growth rate with regards to the pulse lengths of both precursors indicated that the Bi2Se3 process had characteristic ALD properties. Also, the film thickness corresponded linearly with increasing number of deposition cycles. No ALD window was discovered and the growth rates decreased significantly with increasing temperatures, similarly to other ALD processes utilizing alkylsilyl chalcogenide precursors. Nevertheless, high growth rates of 1.6 Å per cycle occurred at 160 °C. In addition, a good thermoelectric response was shown.

AB - An atomic layer deposition (ALD) process was developed for an important thermoelectric material Bi2Se3 utilizing dechlorosilylation reactions between BiCl3 and (Et3Si)2Se precursors. The applicability of this alkylsilyl selenide precursor was confirmed, as reactions with BiCl3 produced good quality thin films with low impurity contents. Saturation of the growth rate with regards to the pulse lengths of both precursors indicated that the Bi2Se3 process had characteristic ALD properties. Also, the film thickness corresponded linearly with increasing number of deposition cycles. No ALD window was discovered and the growth rates decreased significantly with increasing temperatures, similarly to other ALD processes utilizing alkylsilyl chalcogenide precursors. Nevertheless, high growth rates of 1.6 Å per cycle occurred at 160 °C. In addition, a good thermoelectric response was shown.

U2 - 10.1039/c5tc00533g

DO - 10.1039/c5tc00533g

M3 - Article

SN - 2050-7526

VL - 3

SP - 4820

EP - 4828

JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

IS - 18

ER -

(Et3Si)2Se as a precursor for atomic layer deposition: growth analysis of thermoelectric Bi2Se3

Abstract

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