(Et3Si)2Se as a precursor for atomic layer deposition: growth analysis of thermoelectric Bi2Se3

Tiina Sarnet (Corresponding Author), Timo Hatanpää, Marko Vehkamäki, Timo Flyktman, Jouni Ahopelto, Kenichiro Mizohata, Mikko Ritala, Markku Leskelä

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Abstract

An atomic layer deposition (ALD) process was developed for an important thermoelectric material Bi2Se3 utilizing dechlorosilylation reactions between BiCl3 and (Et3Si)2Se precursors. The applicability of this alkylsilyl selenide precursor was confirmed, as reactions with BiCl3 produced good quality thin films with low impurity contents. Saturation of the growth rate with regards to the pulse lengths of both precursors indicated that the Bi2Se3 process had characteristic ALD properties. Also, the film thickness corresponded linearly with increasing number of deposition cycles. No ALD window was discovered and the growth rates decreased significantly with increasing temperatures, similarly to other ALD processes utilizing alkylsilyl chalcogenide precursors. Nevertheless, high growth rates of 1.6 Å per cycle occurred at 160 °C. In addition, a good thermoelectric response was shown.
Original languageEnglish
Pages (from-to)4820-4828
JournalJournal of Materials Chemistry C
Volume3
Issue number18
DOIs
Publication statusPublished - 2015
MoE publication typeA1 Journal article-refereed

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Atomic layer deposition
Film thickness
Impurities
Thin films
Temperature

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Sarnet, Tiina ; Hatanpää, Timo ; Vehkamäki, Marko ; Flyktman, Timo ; Ahopelto, Jouni ; Mizohata, Kenichiro ; Ritala, Mikko ; Leskelä, Markku. / (Et3Si)2Se as a precursor for atomic layer deposition: growth analysis of thermoelectric Bi2Se3. In: Journal of Materials Chemistry C. 2015 ; Vol. 3, No. 18. pp. 4820-4828.
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abstract = "An atomic layer deposition (ALD) process was developed for an important thermoelectric material Bi2Se3 utilizing dechlorosilylation reactions between BiCl3 and (Et3Si)2Se precursors. The applicability of this alkylsilyl selenide precursor was confirmed, as reactions with BiCl3 produced good quality thin films with low impurity contents. Saturation of the growth rate with regards to the pulse lengths of both precursors indicated that the Bi2Se3 process had characteristic ALD properties. Also, the film thickness corresponded linearly with increasing number of deposition cycles. No ALD window was discovered and the growth rates decreased significantly with increasing temperatures, similarly to other ALD processes utilizing alkylsilyl chalcogenide precursors. Nevertheless, high growth rates of 1.6 {\AA} per cycle occurred at 160 °C. In addition, a good thermoelectric response was shown.",
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(Et3Si)2Se as a precursor for atomic layer deposition: growth analysis of thermoelectric Bi2Se3. / Sarnet, Tiina (Corresponding Author); Hatanpää, Timo; Vehkamäki, Marko; Flyktman, Timo; Ahopelto, Jouni; Mizohata, Kenichiro; Ritala, Mikko; Leskelä, Markku.

In: Journal of Materials Chemistry C, Vol. 3, No. 18, 2015, p. 4820-4828.

Research output: Contribution to journalArticleScientificpeer-review

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T1 - (Et3Si)2Se as a precursor for atomic layer deposition: growth analysis of thermoelectric Bi2Se3

AU - Sarnet, Tiina

AU - Hatanpää, Timo

AU - Vehkamäki, Marko

AU - Flyktman, Timo

AU - Ahopelto, Jouni

AU - Mizohata, Kenichiro

AU - Ritala, Mikko

AU - Leskelä, Markku

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AB - An atomic layer deposition (ALD) process was developed for an important thermoelectric material Bi2Se3 utilizing dechlorosilylation reactions between BiCl3 and (Et3Si)2Se precursors. The applicability of this alkylsilyl selenide precursor was confirmed, as reactions with BiCl3 produced good quality thin films with low impurity contents. Saturation of the growth rate with regards to the pulse lengths of both precursors indicated that the Bi2Se3 process had characteristic ALD properties. Also, the film thickness corresponded linearly with increasing number of deposition cycles. No ALD window was discovered and the growth rates decreased significantly with increasing temperatures, similarly to other ALD processes utilizing alkylsilyl chalcogenide precursors. Nevertheless, high growth rates of 1.6 Å per cycle occurred at 160 °C. In addition, a good thermoelectric response was shown.

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