Etching of Sacrificial CVD Silicon Dioxide with Anhydrous HF Vapor

Heini Ritala, Jyrki Kiihamäki

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)

Abstract

Anhydrous HF vapor etching of sacrificial silicon dioxide thin films grown by plasma enhanced and low pressure chemical vapor deposition (PECVD and LPCVD) methods was studied. Film compositions as well as etch residue were analyzed. Effects of oxide deposition method, precursors, annealing and oxide composition on etch rate are discussed.
Original languageEnglish
Pages (from-to)351-358
Number of pages8
JournalECS Transactions
Volume25
Issue number5
DOIs
Publication statusPublished - 2009
MoE publication typeA1 Journal article-refereed

Fingerprint

Chemical vapor deposition
Etching
Vapors
Silica
Low pressure chemical vapor deposition
Oxides
Plasma enhanced chemical vapor deposition
Chemical analysis
Annealing
Plasmas
Thin films

Cite this

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title = "Etching of Sacrificial CVD Silicon Dioxide with Anhydrous HF Vapor",
abstract = "Anhydrous HF vapor etching of sacrificial silicon dioxide thin films grown by plasma enhanced and low pressure chemical vapor deposition (PECVD and LPCVD) methods was studied. Film compositions as well as etch residue were analyzed. Effects of oxide deposition method, precursors, annealing and oxide composition on etch rate are discussed.",
author = "Heini Ritala and Jyrki Kiiham{\"a}ki",
note = "Project code: 14311",
year = "2009",
doi = "10.1149/1.3202673",
language = "English",
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journal = "ECS Transactions",
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Etching of Sacrificial CVD Silicon Dioxide with Anhydrous HF Vapor. / Ritala, Heini; Kiihamäki, Jyrki.

In: ECS Transactions, Vol. 25, No. 5, 2009, p. 351-358.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Etching of Sacrificial CVD Silicon Dioxide with Anhydrous HF Vapor

AU - Ritala, Heini

AU - Kiihamäki, Jyrki

N1 - Project code: 14311

PY - 2009

Y1 - 2009

N2 - Anhydrous HF vapor etching of sacrificial silicon dioxide thin films grown by plasma enhanced and low pressure chemical vapor deposition (PECVD and LPCVD) methods was studied. Film compositions as well as etch residue were analyzed. Effects of oxide deposition method, precursors, annealing and oxide composition on etch rate are discussed.

AB - Anhydrous HF vapor etching of sacrificial silicon dioxide thin films grown by plasma enhanced and low pressure chemical vapor deposition (PECVD and LPCVD) methods was studied. Film compositions as well as etch residue were analyzed. Effects of oxide deposition method, precursors, annealing and oxide composition on etch rate are discussed.

U2 - 10.1149/1.3202673

DO - 10.1149/1.3202673

M3 - Article

VL - 25

SP - 351

EP - 358

JO - ECS Transactions

JF - ECS Transactions

SN - 1938-5862

IS - 5

ER -