Etching of Sacrificial CVD Silicon Dioxide with Anhydrous HF Vapor

Heini Ritala; Jyrki Kiihamäki

doi:10.1149/1.3202673

Etching of Sacrificial CVD Silicon Dioxide with Anhydrous HF Vapor

Heini Ritala, Jyrki Kiihamäki

Research output: Contribution to journal › Article › Scientific › peer-review

2 Citations (Scopus)

Abstract

Anhydrous HF vapor etching of sacrificial silicon dioxide thin films grown by plasma enhanced and low pressure chemical vapor deposition (PECVD and LPCVD) methods was studied. Film compositions as well as etch residue were analyzed. Effects of oxide deposition method, precursors, annealing and oxide composition on etch rate are discussed.

Original language	English
Pages (from-to)	351-358
Number of pages	8
Journal	ECS Transactions
Volume	25
Issue number	5
DOIs	https://doi.org/10.1149/1.3202673
Publication status	Published - 2009
MoE publication type	A1 Journal article-refereed

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10.1149/1.3202673

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title = "Etching of Sacrificial CVD Silicon Dioxide with Anhydrous HF Vapor",

abstract = "Anhydrous HF vapor etching of sacrificial silicon dioxide thin films grown by plasma enhanced and low pressure chemical vapor deposition (PECVD and LPCVD) methods was studied. Film compositions as well as etch residue were analyzed. Effects of oxide deposition method, precursors, annealing and oxide composition on etch rate are discussed.",

author = "Heini Ritala and Jyrki Kiiham{\"a}ki",

note = "Project code: 14311 ",

year = "2009",

doi = "10.1149/1.3202673",

language = "English",

volume = "25",

pages = "351--358",

journal = "ECS Transactions",

issn = "1938-5862",

publisher = "Electrochemical Society ECS",

number = "5",

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T1 - Etching of Sacrificial CVD Silicon Dioxide with Anhydrous HF Vapor

AU - Ritala, Heini

AU - Kiihamäki, Jyrki

N1 - Project code: 14311

PY - 2009

Y1 - 2009

N2 - Anhydrous HF vapor etching of sacrificial silicon dioxide thin films grown by plasma enhanced and low pressure chemical vapor deposition (PECVD and LPCVD) methods was studied. Film compositions as well as etch residue were analyzed. Effects of oxide deposition method, precursors, annealing and oxide composition on etch rate are discussed.

AB - Anhydrous HF vapor etching of sacrificial silicon dioxide thin films grown by plasma enhanced and low pressure chemical vapor deposition (PECVD and LPCVD) methods was studied. Film compositions as well as etch residue were analyzed. Effects of oxide deposition method, precursors, annealing and oxide composition on etch rate are discussed.

U2 - 10.1149/1.3202673

DO - 10.1149/1.3202673

M3 - Article

SN - 1938-5862

VL - 25

SP - 351

EP - 358

JO - ECS Transactions

JF - ECS Transactions

IS - 5

ER -

Etching of Sacrificial CVD Silicon Dioxide with Anhydrous HF Vapor

Abstract

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