Etching of Sacrificial CVD Silicon Dioxide with Anhydrous HF Vapor

Heini Ritala, Jyrki Kiihamäki

    Research output: Contribution to journalArticleScientificpeer-review

    2 Citations (Scopus)

    Abstract

    Anhydrous HF vapor etching of sacrificial silicon dioxide thin films grown by plasma enhanced and low pressure chemical vapor deposition (PECVD and LPCVD) methods was studied. Film compositions as well as etch residue were analyzed. Effects of oxide deposition method, precursors, annealing and oxide composition on etch rate are discussed.
    Original languageEnglish
    Pages (from-to)351-358
    Number of pages8
    JournalECS Transactions
    Volume25
    Issue number5
    DOIs
    Publication statusPublished - 2009
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Chemical vapor deposition
    Etching
    Vapors
    Silica
    Low pressure chemical vapor deposition
    Oxides
    Plasma enhanced chemical vapor deposition
    Chemical analysis
    Annealing
    Plasmas
    Thin films

    Cite this

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    title = "Etching of Sacrificial CVD Silicon Dioxide with Anhydrous HF Vapor",
    abstract = "Anhydrous HF vapor etching of sacrificial silicon dioxide thin films grown by plasma enhanced and low pressure chemical vapor deposition (PECVD and LPCVD) methods was studied. Film compositions as well as etch residue were analyzed. Effects of oxide deposition method, precursors, annealing and oxide composition on etch rate are discussed.",
    author = "Heini Ritala and Jyrki Kiiham{\"a}ki",
    note = "Project code: 14311",
    year = "2009",
    doi = "10.1149/1.3202673",
    language = "English",
    volume = "25",
    pages = "351--358",
    journal = "ECS Transactions",
    issn = "1938-5862",
    publisher = "Electrochemical Society ECS",
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    }

    Etching of Sacrificial CVD Silicon Dioxide with Anhydrous HF Vapor. / Ritala, Heini; Kiihamäki, Jyrki.

    In: ECS Transactions, Vol. 25, No. 5, 2009, p. 351-358.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Etching of Sacrificial CVD Silicon Dioxide with Anhydrous HF Vapor

    AU - Ritala, Heini

    AU - Kiihamäki, Jyrki

    N1 - Project code: 14311

    PY - 2009

    Y1 - 2009

    N2 - Anhydrous HF vapor etching of sacrificial silicon dioxide thin films grown by plasma enhanced and low pressure chemical vapor deposition (PECVD and LPCVD) methods was studied. Film compositions as well as etch residue were analyzed. Effects of oxide deposition method, precursors, annealing and oxide composition on etch rate are discussed.

    AB - Anhydrous HF vapor etching of sacrificial silicon dioxide thin films grown by plasma enhanced and low pressure chemical vapor deposition (PECVD and LPCVD) methods was studied. Film compositions as well as etch residue were analyzed. Effects of oxide deposition method, precursors, annealing and oxide composition on etch rate are discussed.

    U2 - 10.1149/1.3202673

    DO - 10.1149/1.3202673

    M3 - Article

    VL - 25

    SP - 351

    EP - 358

    JO - ECS Transactions

    JF - ECS Transactions

    SN - 1938-5862

    IS - 5

    ER -