Etching of Sacrificial CVD Silicon Dioxide with Anhydrous HF Vapor

Heini Ritala, Jyrki Kiihamäki

    Research output: Contribution to journalArticleScientificpeer-review

    2 Citations (Scopus)

    Abstract

    Anhydrous HF vapor etching of sacrificial silicon dioxide thin films grown by plasma enhanced and low pressure chemical vapor deposition (PECVD and LPCVD) methods was studied. Film compositions as well as etch residue were analyzed. Effects of oxide deposition method, precursors, annealing and oxide composition on etch rate are discussed.
    Original languageEnglish
    Pages (from-to)351-358
    Number of pages8
    JournalECS Transactions
    Volume25
    Issue number5
    DOIs
    Publication statusPublished - 2009
    MoE publication typeA1 Journal article-refereed

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