Etching through silicon wafer in inductively coupled plasma

Sami Franssila, Jyrki Kiihamäki, Jani Karttunen

    Research output: Contribution to journalArticleScientificpeer-review

    23 Citations (Scopus)

    Abstract

     Inductively coupled plasma reactor (ICP) has been used to etch holes, trenches and other shapes completely through 380 and 525 μm thick silicon wafers. Bosch/STS process of gas flow pulsing with SF6 etch step and C4F8 sidewall passivation step was employed. Etch rate reduction due to aspect ratio dependence and pattern size and shape effects have been explored. Etch stop has been studied both on bulk and SOI wafers. Notching effect was observed for high aspect ratio features but it was absent in large, low aspect ratio features. Aluminum etch stop layer has been shown to eliminate notching.

    Original languageEnglish
    Pages (from-to)141 - 144
    Number of pages4
    JournalMicrosystem Technologies
    Volume6
    Issue number4
    DOIs
    Publication statusPublished - 2000
    MoE publication typeA1 Journal article-refereed

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