Etching through silicon wafer in inductively coupled plasma

Sami Franssila, Jyrki Kiihamäki, Jani Karttunen

Research output: Contribution to journalArticleScientificpeer-review

21 Citations (Scopus)

Abstract

 Inductively coupled plasma reactor (ICP) has been used to etch holes, trenches and other shapes completely through 380 and 525 μm thick silicon wafers. Bosch/STS process of gas flow pulsing with SF6 etch step and C4F8 sidewall passivation step was employed. Etch rate reduction due to aspect ratio dependence and pattern size and shape effects have been explored. Etch stop has been studied both on bulk and SOI wafers. Notching effect was observed for high aspect ratio features but it was absent in large, low aspect ratio features. Aluminum etch stop layer has been shown to eliminate notching.

Original languageEnglish
Pages (from-to)141 - 144
Number of pages4
JournalMicrosystem Technologies
Volume6
Issue number4
DOIs
Publication statusPublished - 2000
MoE publication typeA1 Journal article-refereed

Fingerprint

Inductively coupled plasma
Silicon wafers
Aspect ratio
Etching
etching
wafers
low aspect ratio
space transportation system
SOI (semiconductors)
silicon
high aspect ratio
passivity
gas flow
aspect ratio
reactors
Aluminum
aluminum
Passivation
Flow of gases

Cite this

Franssila, Sami ; Kiihamäki, Jyrki ; Karttunen, Jani. / Etching through silicon wafer in inductively coupled plasma. In: Microsystem Technologies. 2000 ; Vol. 6, No. 4. pp. 141 - 144.
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Etching through silicon wafer in inductively coupled plasma. / Franssila, Sami; Kiihamäki, Jyrki; Karttunen, Jani.

In: Microsystem Technologies, Vol. 6, No. 4, 2000, p. 141 - 144.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Etching through silicon wafer in inductively coupled plasma

AU - Franssila, Sami

AU - Kiihamäki, Jyrki

AU - Karttunen, Jani

PY - 2000

Y1 - 2000

N2 -  Inductively coupled plasma reactor (ICP) has been used to etch holes, trenches and other shapes completely through 380 and 525 μm thick silicon wafers. Bosch/STS process of gas flow pulsing with SF6 etch step and C4F8 sidewall passivation step was employed. Etch rate reduction due to aspect ratio dependence and pattern size and shape effects have been explored. Etch stop has been studied both on bulk and SOI wafers. Notching effect was observed for high aspect ratio features but it was absent in large, low aspect ratio features. Aluminum etch stop layer has been shown to eliminate notching.

AB -  Inductively coupled plasma reactor (ICP) has been used to etch holes, trenches and other shapes completely through 380 and 525 μm thick silicon wafers. Bosch/STS process of gas flow pulsing with SF6 etch step and C4F8 sidewall passivation step was employed. Etch rate reduction due to aspect ratio dependence and pattern size and shape effects have been explored. Etch stop has been studied both on bulk and SOI wafers. Notching effect was observed for high aspect ratio features but it was absent in large, low aspect ratio features. Aluminum etch stop layer has been shown to eliminate notching.

U2 - 10.1007/s005420050183

DO - 10.1007/s005420050183

M3 - Article

VL - 6

SP - 141

EP - 144

JO - Microsystem Technologies

JF - Microsystem Technologies

SN - 0946-7076

IS - 4

ER -