Etching through silicon wafer in inductively coupled plasma

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific

Original language	English
Title of host publication	Conference on High Aspect Ratio Microstructure Technology, HARMST'99
Pages	24 - 25
Publication status	Published - 1999
MoE publication type	B3 Non-refereed article in conference proceedings
Event	Conference on High Aspect Ratio Microstructure Technology, HARMST '99 - Kisarazu, Japan Duration: 13 Jun 1999 → 15 Jun 1999

Conference	Conference on High Aspect Ratio Microstructure Technology, HARMST '99
Country/Territory	Japan
City	Kisarazu
Period	13/06/99 → 15/06/99

Cite this

@inproceedings{e99844d4c5614dc09e9538b7b6a86596,

title = "Etching through silicon wafer in inductively coupled plasma",

author = "Sami Franssila and Jyrki Kiiham{\"a}ki and Jani Karttunen",

year = "1999",

language = "English",

pages = "24 -- 25",

booktitle = "Conference on High Aspect Ratio Microstructure Technology, HARMST'99",

note = "Conference on High Aspect Ratio Microstructure Technology, HARMST '99 ; Conference date: 13-06-1999 Through 15-06-1999",

}

TY - GEN

T1 - Etching through silicon wafer in inductively coupled plasma

AU - Franssila, Sami

AU - Kiihamäki, Jyrki

AU - Karttunen, Jani

PY - 1999

Y1 - 1999

M3 - Conference article in proceedings

SP - 24

EP - 25

BT - Conference on High Aspect Ratio Microstructure Technology, HARMST'99

T2 - Conference on High Aspect Ratio Microstructure Technology, HARMST '99

Y2 - 13 June 1999 through 15 June 1999

ER -