Excellent silicon surface passivation using dimethylaluminium chloride as Al source for atomic layer deposited Al2O3

Shuo Li (Corresponding Author), Yameng Bao, Mikko Laitinen, Timo Sajavaara, Matti Putkonen, Hele Savin

    Research output: Contribution to journalArticleScientificpeer-review

    9 Citations (Scopus)

    Abstract

    We demonstrate that the surface passivation of crystalline silicon and thermal stability of atomic layer deposited (ALD) Al2O3 can be substantially improved by replacing the conventional aluminium precursor trimethylaluminium (TMA) with low-cost dimethylaluminium chloride (DMACl). A film thickness as low as 6 nm is enough to result in a minority carrier lifetime above 1 ms after high temperature firing step. In addition, optimal ALD DMACl + H2O process temperature and the film growth rate are comparable to the conventional TMA-based process. Thus, DMACl appears to be a potential alternative precursor for mass production with much lower chemical cost and yet excellent passivation performance.
    Original languageEnglish
    Pages (from-to)1795-1799
    JournalPhysica Status Solidi A: Applications and Materials Science
    Volume212
    Issue number8
    DOIs
    Publication statusPublished - 2015
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Silicon
    Passivation
    passivity
    chlorides
    Carrier lifetime
    silicon
    Film growth
    Film thickness
    Costs
    Thermodynamic stability
    carrier lifetime
    Crystalline materials
    minority carriers
    Aluminum
    Temperature
    thermal stability
    film thickness
    costs
    aluminum
    dimethylaluminum chloride

    Keywords

    • Al2O3
    • atomic layer deposition
    • crystals
    • dimethylaluminium chloride
    • silicon
    • surface passivation

    Cite this

    Li, Shuo ; Bao, Yameng ; Laitinen, Mikko ; Sajavaara, Timo ; Putkonen, Matti ; Savin, Hele. / Excellent silicon surface passivation using dimethylaluminium chloride as Al source for atomic layer deposited Al2O3. In: Physica Status Solidi A: Applications and Materials Science. 2015 ; Vol. 212, No. 8. pp. 1795-1799.
    @article{1de08ea6bcb84fbfb9f15823a46185be,
    title = "Excellent silicon surface passivation using dimethylaluminium chloride as Al source for atomic layer deposited Al2O3",
    abstract = "We demonstrate that the surface passivation of crystalline silicon and thermal stability of atomic layer deposited (ALD) Al2O3 can be substantially improved by replacing the conventional aluminium precursor trimethylaluminium (TMA) with low-cost dimethylaluminium chloride (DMACl). A film thickness as low as 6 nm is enough to result in a minority carrier lifetime above 1 ms after high temperature firing step. In addition, optimal ALD DMACl + H2O process temperature and the film growth rate are comparable to the conventional TMA-based process. Thus, DMACl appears to be a potential alternative precursor for mass production with much lower chemical cost and yet excellent passivation performance.",
    keywords = "Al2O3, atomic layer deposition, crystals, dimethylaluminium chloride, silicon, surface passivation",
    author = "Shuo Li and Yameng Bao and Mikko Laitinen and Timo Sajavaara and Matti Putkonen and Hele Savin",
    year = "2015",
    doi = "10.1002/pssa.201431930",
    language = "English",
    volume = "212",
    pages = "1795--1799",
    journal = "Physica Status Solidi A: Applications and Materials Science",
    issn = "1862-6300",
    publisher = "Wiley",
    number = "8",

    }

    Excellent silicon surface passivation using dimethylaluminium chloride as Al source for atomic layer deposited Al2O3. / Li, Shuo (Corresponding Author); Bao, Yameng; Laitinen, Mikko; Sajavaara, Timo; Putkonen, Matti; Savin, Hele.

    In: Physica Status Solidi A: Applications and Materials Science, Vol. 212, No. 8, 2015, p. 1795-1799.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Excellent silicon surface passivation using dimethylaluminium chloride as Al source for atomic layer deposited Al2O3

    AU - Li, Shuo

    AU - Bao, Yameng

    AU - Laitinen, Mikko

    AU - Sajavaara, Timo

    AU - Putkonen, Matti

    AU - Savin, Hele

    PY - 2015

    Y1 - 2015

    N2 - We demonstrate that the surface passivation of crystalline silicon and thermal stability of atomic layer deposited (ALD) Al2O3 can be substantially improved by replacing the conventional aluminium precursor trimethylaluminium (TMA) with low-cost dimethylaluminium chloride (DMACl). A film thickness as low as 6 nm is enough to result in a minority carrier lifetime above 1 ms after high temperature firing step. In addition, optimal ALD DMACl + H2O process temperature and the film growth rate are comparable to the conventional TMA-based process. Thus, DMACl appears to be a potential alternative precursor for mass production with much lower chemical cost and yet excellent passivation performance.

    AB - We demonstrate that the surface passivation of crystalline silicon and thermal stability of atomic layer deposited (ALD) Al2O3 can be substantially improved by replacing the conventional aluminium precursor trimethylaluminium (TMA) with low-cost dimethylaluminium chloride (DMACl). A film thickness as low as 6 nm is enough to result in a minority carrier lifetime above 1 ms after high temperature firing step. In addition, optimal ALD DMACl + H2O process temperature and the film growth rate are comparable to the conventional TMA-based process. Thus, DMACl appears to be a potential alternative precursor for mass production with much lower chemical cost and yet excellent passivation performance.

    KW - Al2O3

    KW - atomic layer deposition

    KW - crystals

    KW - dimethylaluminium chloride

    KW - silicon

    KW - surface passivation

    U2 - 10.1002/pssa.201431930

    DO - 10.1002/pssa.201431930

    M3 - Article

    VL - 212

    SP - 1795

    EP - 1799

    JO - Physica Status Solidi A: Applications and Materials Science

    JF - Physica Status Solidi A: Applications and Materials Science

    SN - 1862-6300

    IS - 8

    ER -