Excellent silicon surface passivation using dimethylaluminium chloride as Al source for atomic layer deposited Al2O3

Shuo Li (Corresponding Author), Yameng Bao, Mikko Laitinen, Timo Sajavaara, Matti Putkonen, Hele Savin

    Research output: Contribution to journalArticleScientificpeer-review

    11 Citations (Scopus)

    Abstract

    We demonstrate that the surface passivation of crystalline silicon and thermal stability of atomic layer deposited (ALD) Al2O3 can be substantially improved by replacing the conventional aluminium precursor trimethylaluminium (TMA) with low-cost dimethylaluminium chloride (DMACl). A film thickness as low as 6 nm is enough to result in a minority carrier lifetime above 1 ms after high temperature firing step. In addition, optimal ALD DMACl + H2O process temperature and the film growth rate are comparable to the conventional TMA-based process. Thus, DMACl appears to be a potential alternative precursor for mass production with much lower chemical cost and yet excellent passivation performance.
    Original languageEnglish
    Pages (from-to)1795-1799
    JournalPhysica Status Solidi A: Applications and Materials Science
    Volume212
    Issue number8
    DOIs
    Publication statusPublished - 2015
    MoE publication typeA1 Journal article-refereed

    Keywords

    • Al2O3
    • atomic layer deposition
    • crystals
    • dimethylaluminium chloride
    • silicon
    • surface passivation

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