INIS
layers
100%
surfaces
100%
silicon
100%
chlorides
100%
passivation
100%
cost
50%
precursor
50%
films
50%
performance
25%
thickness
25%
production
25%
aluminium
25%
stability
25%
growth
25%
high temperature
25%
carrier lifetime
25%
Keyphrases
Aluminum Oxide
100%
Atomic Layer Deposited
100%
Silicon Surface Passivation
100%
Diethylaluminum Chloride
100%
Trimethylaluminum
50%
Film Thickness
25%
Thermal Stability
25%
Mass Production
25%
Surface Passivation
25%
Growth Rate
25%
Film Growth
25%
Processing Temperature
25%
After High Temperature
25%
Passivation Quality
25%
Minority Carrier Lifetime
25%
Aluminum Precursor
25%
Alternative Precursor
25%
Chemical Cost
25%
Crystalline Silicon
25%
Potential Alternatives
25%
Engineering
Passivation
100%
Atomic Layer
100%
Silicon Surface
100%
Crystalline Silicon
33%
Chemical Cost
33%
Minority Carriers
33%
Mass Production
33%
Carrier Lifetime
33%