Experiences in flip chip production of radiation detectors

Satu Savolainen-Pulli (Corresponding Author), Jaakko Salonen, Jorma Salmi, Sami Vähänen

    Research output: Contribution to journalArticleScientificpeer-review

    8 Citations (Scopus)

    Abstract

    Modern imaging devices often require heterogeneous integration of different materials and technologies. Because of yield considerations, material availability, and various technological limitations, an extremely fine pitch is necessary to realize high-resolution images. Thus, there is a need for a hybridization technology that is able to join together readout amplifiers and pixel detectors at a very fine pitch. This paper describes radiation detector flip chip production at VTT. Our flip chip technology utilizes 25-μm diameter tin–lead solder bumps at a 50-μm pitch and is based on flux-free bonding. When preprocessed wafers are used, as is the case here, the total yield is defined only partly by the flip chip process. Wafer preprocessing done by a third-party silicon foundry and the flip chip process create different process defects. Wafer-level yield maps (based on probing) provided by the customer are used to select good readout chips for assembly. Wafer probing is often done outside of a real clean room environment, resulting in particle contamination and/or scratches on the wafers. Factors affecting the total yield of flip chip bonded detectors are discussed, and some yield numbers of the process are given. Ways to improve yield are considered, and finally guidelines for process planning and device design with respect to yield optimization are given.
    Original languageEnglish
    Pages (from-to)314-319
    Number of pages6
    JournalNuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
    Volume565
    Issue number1
    DOIs
    Publication statusPublished - 2006
    MoE publication typeA1 Journal article-refereed
    EventInternational Workshop on Semiconductor Pixel Detectors for Particles and Imaging - Bonn, Germany
    Duration: 5 Sep 20058 Sep 2005

    Fingerprint

    Radiation detectors
    radiation detectors
    chips
    wafers
    Detectors
    Clean rooms
    Process planning
    Foundries
    Image resolution
    Soldering alloys
    readout
    Contamination
    Pixels
    Availability
    Fluxes
    clean rooms
    Imaging techniques
    Silicon
    Defects
    foundries

    Keywords

    • flip chip
    • solder bump
    • yield
    • pixel detector

    Cite this

    @article{a2138869fd664f7baab4d7c715e97824,
    title = "Experiences in flip chip production of radiation detectors",
    abstract = "Modern imaging devices often require heterogeneous integration of different materials and technologies. Because of yield considerations, material availability, and various technological limitations, an extremely fine pitch is necessary to realize high-resolution images. Thus, there is a need for a hybridization technology that is able to join together readout amplifiers and pixel detectors at a very fine pitch. This paper describes radiation detector flip chip production at VTT. Our flip chip technology utilizes 25-μm diameter tin–lead solder bumps at a 50-μm pitch and is based on flux-free bonding. When preprocessed wafers are used, as is the case here, the total yield is defined only partly by the flip chip process. Wafer preprocessing done by a third-party silicon foundry and the flip chip process create different process defects. Wafer-level yield maps (based on probing) provided by the customer are used to select good readout chips for assembly. Wafer probing is often done outside of a real clean room environment, resulting in particle contamination and/or scratches on the wafers. Factors affecting the total yield of flip chip bonded detectors are discussed, and some yield numbers of the process are given. Ways to improve yield are considered, and finally guidelines for process planning and device design with respect to yield optimization are given.",
    keywords = "flip chip, solder bump, yield, pixel detector",
    author = "Satu Savolainen-Pulli and Jaakko Salonen and Jorma Salmi and Sami V{\"a}h{\"a}nen",
    year = "2006",
    doi = "10.1016/j.nima.2006.04.090",
    language = "English",
    volume = "565",
    pages = "314--319",
    journal = "Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",
    issn = "0168-9002",
    publisher = "Elsevier",
    number = "1",

    }

    Experiences in flip chip production of radiation detectors. / Savolainen-Pulli, Satu (Corresponding Author); Salonen, Jaakko; Salmi, Jorma; Vähänen, Sami.

    In: Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 565, No. 1, 2006, p. 314-319.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Experiences in flip chip production of radiation detectors

    AU - Savolainen-Pulli, Satu

    AU - Salonen, Jaakko

    AU - Salmi, Jorma

    AU - Vähänen, Sami

    PY - 2006

    Y1 - 2006

    N2 - Modern imaging devices often require heterogeneous integration of different materials and technologies. Because of yield considerations, material availability, and various technological limitations, an extremely fine pitch is necessary to realize high-resolution images. Thus, there is a need for a hybridization technology that is able to join together readout amplifiers and pixel detectors at a very fine pitch. This paper describes radiation detector flip chip production at VTT. Our flip chip technology utilizes 25-μm diameter tin–lead solder bumps at a 50-μm pitch and is based on flux-free bonding. When preprocessed wafers are used, as is the case here, the total yield is defined only partly by the flip chip process. Wafer preprocessing done by a third-party silicon foundry and the flip chip process create different process defects. Wafer-level yield maps (based on probing) provided by the customer are used to select good readout chips for assembly. Wafer probing is often done outside of a real clean room environment, resulting in particle contamination and/or scratches on the wafers. Factors affecting the total yield of flip chip bonded detectors are discussed, and some yield numbers of the process are given. Ways to improve yield are considered, and finally guidelines for process planning and device design with respect to yield optimization are given.

    AB - Modern imaging devices often require heterogeneous integration of different materials and technologies. Because of yield considerations, material availability, and various technological limitations, an extremely fine pitch is necessary to realize high-resolution images. Thus, there is a need for a hybridization technology that is able to join together readout amplifiers and pixel detectors at a very fine pitch. This paper describes radiation detector flip chip production at VTT. Our flip chip technology utilizes 25-μm diameter tin–lead solder bumps at a 50-μm pitch and is based on flux-free bonding. When preprocessed wafers are used, as is the case here, the total yield is defined only partly by the flip chip process. Wafer preprocessing done by a third-party silicon foundry and the flip chip process create different process defects. Wafer-level yield maps (based on probing) provided by the customer are used to select good readout chips for assembly. Wafer probing is often done outside of a real clean room environment, resulting in particle contamination and/or scratches on the wafers. Factors affecting the total yield of flip chip bonded detectors are discussed, and some yield numbers of the process are given. Ways to improve yield are considered, and finally guidelines for process planning and device design with respect to yield optimization are given.

    KW - flip chip

    KW - solder bump

    KW - yield

    KW - pixel detector

    U2 - 10.1016/j.nima.2006.04.090

    DO - 10.1016/j.nima.2006.04.090

    M3 - Article

    VL - 565

    SP - 314

    EP - 319

    JO - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

    JF - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

    SN - 0168-9002

    IS - 1

    ER -