Experimental determination of the temperature dependency of the elastic constants of degenerately doped silicon

Antti Jaakkola, Mika Prunnila, Tuomas Pensala, James Dekker, Panu Pekko

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

2 Citations (Scopus)

Abstract

We study experimentally the temperature dependence of the elastic constants of degenerately doped silicon as a function of the doping level. First and second order thermal coefficients of the elastic constants are extracted from the temperature dependent resonance frequencies of a set of MEMS resonators fabricated on phosphorus, arsenic and boron doped wafers having maximum doping levels of 7.5 * 1019cm -3, 2.5 * 10 19cm -3 and 3 * 1019cm -3, respectively. Trends in the behavior of the thermal coefficients as a function of doping are identified and discussed
Original languageEnglish
Title of host publicationConference Proceeding
Subtitle of host publicationJoint European Frequency and Time Forum & International Frequency Control Symposium, EFTF/IFC 2013
PublisherInstitute of Electrical and Electronic Engineers IEEE
Pages421-424
ISBN (Electronic)978-1-4799-0341-2
ISBN (Print)978-1-4799-0342-9
DOIs
Publication statusPublished - 2013
MoE publication typeNot Eligible
EventJoint European Frequency and Time Forum and International Frequency Control Symposium, EFTF/IFC 2013 - Prague, Czech Republic
Duration: 21 Jul 201325 Jul 2013

Conference

ConferenceJoint European Frequency and Time Forum and International Frequency Control Symposium, EFTF/IFC 2013
Abbreviated titleEFTF/IFC 2013
CountryCzech Republic
CityPrague
Period21/07/1325/07/13

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elastic properties
silicon
coefficients
arsenic
microelectromechanical systems
temperature
phosphorus
boron
resonators
wafers
trends
temperature dependence

Cite this

Jaakkola, A., Prunnila, M., Pensala, T., Dekker, J., & Pekko, P. (2013). Experimental determination of the temperature dependency of the elastic constants of degenerately doped silicon. In Conference Proceeding: Joint European Frequency and Time Forum & International Frequency Control Symposium, EFTF/IFC 2013 (pp. 421-424). Institute of Electrical and Electronic Engineers IEEE. https://doi.org/10.1109/EFTF-IFC.2013.6702116
Jaakkola, Antti ; Prunnila, Mika ; Pensala, Tuomas ; Dekker, James ; Pekko, Panu. / Experimental determination of the temperature dependency of the elastic constants of degenerately doped silicon. Conference Proceeding: Joint European Frequency and Time Forum & International Frequency Control Symposium, EFTF/IFC 2013. Institute of Electrical and Electronic Engineers IEEE, 2013. pp. 421-424
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Jaakkola, A, Prunnila, M, Pensala, T, Dekker, J & Pekko, P 2013, Experimental determination of the temperature dependency of the elastic constants of degenerately doped silicon. in Conference Proceeding: Joint European Frequency and Time Forum & International Frequency Control Symposium, EFTF/IFC 2013. Institute of Electrical and Electronic Engineers IEEE, pp. 421-424, Joint European Frequency and Time Forum and International Frequency Control Symposium, EFTF/IFC 2013, Prague, Czech Republic, 21/07/13. https://doi.org/10.1109/EFTF-IFC.2013.6702116

Experimental determination of the temperature dependency of the elastic constants of degenerately doped silicon. / Jaakkola, Antti; Prunnila, Mika; Pensala, Tuomas; Dekker, James; Pekko, Panu.

Conference Proceeding: Joint European Frequency and Time Forum & International Frequency Control Symposium, EFTF/IFC 2013. Institute of Electrical and Electronic Engineers IEEE, 2013. p. 421-424.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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N2 - We study experimentally the temperature dependence of the elastic constants of degenerately doped silicon as a function of the doping level. First and second order thermal coefficients of the elastic constants are extracted from the temperature dependent resonance frequencies of a set of MEMS resonators fabricated on phosphorus, arsenic and boron doped wafers having maximum doping levels of 7.5 * 1019cm -3, 2.5 * 10 19cm -3 and 3 * 1019cm -3, respectively. Trends in the behavior of the thermal coefficients as a function of doping are identified and discussed

AB - We study experimentally the temperature dependence of the elastic constants of degenerately doped silicon as a function of the doping level. First and second order thermal coefficients of the elastic constants are extracted from the temperature dependent resonance frequencies of a set of MEMS resonators fabricated on phosphorus, arsenic and boron doped wafers having maximum doping levels of 7.5 * 1019cm -3, 2.5 * 10 19cm -3 and 3 * 1019cm -3, respectively. Trends in the behavior of the thermal coefficients as a function of doping are identified and discussed

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Jaakkola A, Prunnila M, Pensala T, Dekker J, Pekko P. Experimental determination of the temperature dependency of the elastic constants of degenerately doped silicon. In Conference Proceeding: Joint European Frequency and Time Forum & International Frequency Control Symposium, EFTF/IFC 2013. Institute of Electrical and Electronic Engineers IEEE. 2013. p. 421-424 https://doi.org/10.1109/EFTF-IFC.2013.6702116