Abstract
We study experimentally the temperature dependence of the
elastic constants of degenerately doped silicon as a
function of the doping level. First and second order
thermal coefficients of the elastic constants are
extracted from the temperature dependent resonance
frequencies of a set of MEMS resonators fabricated on
phosphorus, arsenic and boron doped wafers having maximum
doping levels of 7.5 * 1019cm -3, 2.5 * 10 19cm -3 and 3
* 1019cm -3, respectively. Trends in the behavior of the
thermal coefficients as a function of doping are
identified and discussed
Original language | English |
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Title of host publication | Conference Proceeding |
Subtitle of host publication | Joint European Frequency and Time Forum & International Frequency Control Symposium, EFTF/IFC 2013 |
Publisher | IEEE Institute of Electrical and Electronic Engineers |
Pages | 421-424 |
ISBN (Electronic) | 978-1-4799-0341-2 |
ISBN (Print) | 978-1-4799-0342-9 |
DOIs | |
Publication status | Published - 2013 |
MoE publication type | Not Eligible |
Event | Joint European Frequency and Time Forum and International Frequency Control Symposium, EFTF/IFC 2013 - Prague, Czech Republic Duration: 21 Jul 2013 → 25 Jul 2013 |
Conference
Conference | Joint European Frequency and Time Forum and International Frequency Control Symposium, EFTF/IFC 2013 |
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Abbreviated title | EFTF/IFC 2013 |
Country/Territory | Czech Republic |
City | Prague |
Period | 21/07/13 → 25/07/13 |