Experimental determination of the temperature dependency of the elastic constants of degenerately doped silicon

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    2 Citations (Scopus)

    Abstract

    We study experimentally the temperature dependence of the elastic constants of degenerately doped silicon as a function of the doping level. First and second order thermal coefficients of the elastic constants are extracted from the temperature dependent resonance frequencies of a set of MEMS resonators fabricated on phosphorus, arsenic and boron doped wafers having maximum doping levels of 7.5 * 1019cm -3, 2.5 * 10 19cm -3 and 3 * 1019cm -3, respectively. Trends in the behavior of the thermal coefficients as a function of doping are identified and discussed
    Original languageEnglish
    Title of host publicationConference Proceeding
    Subtitle of host publicationJoint European Frequency and Time Forum & International Frequency Control Symposium, EFTF/IFC 2013
    PublisherIEEE Institute of Electrical and Electronic Engineers
    Pages421-424
    ISBN (Electronic)978-1-4799-0341-2
    ISBN (Print)978-1-4799-0342-9
    DOIs
    Publication statusPublished - 2013
    MoE publication typeNot Eligible
    EventJoint European Frequency and Time Forum and International Frequency Control Symposium, EFTF/IFC 2013 - Prague, Czech Republic
    Duration: 21 Jul 201325 Jul 2013

    Conference

    ConferenceJoint European Frequency and Time Forum and International Frequency Control Symposium, EFTF/IFC 2013
    Abbreviated titleEFTF/IFC 2013
    CountryCzech Republic
    CityPrague
    Period21/07/1325/07/13

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