Experimental determination of the temperature dependency of the elastic constants of degenerately doped silicon

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    2 Citations (Scopus)

    Abstract

    We study experimentally the temperature dependence of the elastic constants of degenerately doped silicon as a function of the doping level. First and second order thermal coefficients of the elastic constants are extracted from the temperature dependent resonance frequencies of a set of MEMS resonators fabricated on phosphorus, arsenic and boron doped wafers having maximum doping levels of 7.5 * 1019cm -3, 2.5 * 10 19cm -3 and 3 * 1019cm -3, respectively. Trends in the behavior of the thermal coefficients as a function of doping are identified and discussed
    Original languageEnglish
    Title of host publicationConference Proceeding
    Subtitle of host publicationJoint European Frequency and Time Forum & International Frequency Control Symposium, EFTF/IFC 2013
    PublisherIEEE Institute of Electrical and Electronic Engineers
    Pages421-424
    ISBN (Electronic)978-1-4799-0341-2
    ISBN (Print)978-1-4799-0342-9
    DOIs
    Publication statusPublished - 2013
    MoE publication typeNot Eligible
    EventJoint European Frequency and Time Forum and International Frequency Control Symposium, EFTF/IFC 2013 - Prague, Czech Republic
    Duration: 21 Jul 201325 Jul 2013

    Conference

    ConferenceJoint European Frequency and Time Forum and International Frequency Control Symposium, EFTF/IFC 2013
    Abbreviated titleEFTF/IFC 2013
    CountryCzech Republic
    CityPrague
    Period21/07/1325/07/13

    Fingerprint

    elastic properties
    silicon
    coefficients
    arsenic
    microelectromechanical systems
    temperature
    phosphorus
    boron
    resonators
    wafers
    trends
    temperature dependence

    Cite this

    Jaakkola, A., Prunnila, M., Pensala, T., Dekker, J., & Pekko, P. (2013). Experimental determination of the temperature dependency of the elastic constants of degenerately doped silicon. In Conference Proceeding: Joint European Frequency and Time Forum & International Frequency Control Symposium, EFTF/IFC 2013 (pp. 421-424). IEEE Institute of Electrical and Electronic Engineers . https://doi.org/10.1109/EFTF-IFC.2013.6702116
    Jaakkola, Antti ; Prunnila, Mika ; Pensala, Tuomas ; Dekker, James ; Pekko, Panu. / Experimental determination of the temperature dependency of the elastic constants of degenerately doped silicon. Conference Proceeding: Joint European Frequency and Time Forum & International Frequency Control Symposium, EFTF/IFC 2013. IEEE Institute of Electrical and Electronic Engineers , 2013. pp. 421-424
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    title = "Experimental determination of the temperature dependency of the elastic constants of degenerately doped silicon",
    abstract = "We study experimentally the temperature dependence of the elastic constants of degenerately doped silicon as a function of the doping level. First and second order thermal coefficients of the elastic constants are extracted from the temperature dependent resonance frequencies of a set of MEMS resonators fabricated on phosphorus, arsenic and boron doped wafers having maximum doping levels of 7.5 * 1019cm -3, 2.5 * 10 19cm -3 and 3 * 1019cm -3, respectively. Trends in the behavior of the thermal coefficients as a function of doping are identified and discussed",
    author = "Antti Jaakkola and Mika Prunnila and Tuomas Pensala and James Dekker and Panu Pekko",
    year = "2013",
    doi = "10.1109/EFTF-IFC.2013.6702116",
    language = "English",
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    Jaakkola, A, Prunnila, M, Pensala, T, Dekker, J & Pekko, P 2013, Experimental determination of the temperature dependency of the elastic constants of degenerately doped silicon. in Conference Proceeding: Joint European Frequency and Time Forum & International Frequency Control Symposium, EFTF/IFC 2013. IEEE Institute of Electrical and Electronic Engineers , pp. 421-424, Joint European Frequency and Time Forum and International Frequency Control Symposium, EFTF/IFC 2013, Prague, Czech Republic, 21/07/13. https://doi.org/10.1109/EFTF-IFC.2013.6702116

    Experimental determination of the temperature dependency of the elastic constants of degenerately doped silicon. / Jaakkola, Antti; Prunnila, Mika; Pensala, Tuomas; Dekker, James; Pekko, Panu.

    Conference Proceeding: Joint European Frequency and Time Forum & International Frequency Control Symposium, EFTF/IFC 2013. IEEE Institute of Electrical and Electronic Engineers , 2013. p. 421-424.

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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    AU - Jaakkola, Antti

    AU - Prunnila, Mika

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    AU - Pekko, Panu

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    N2 - We study experimentally the temperature dependence of the elastic constants of degenerately doped silicon as a function of the doping level. First and second order thermal coefficients of the elastic constants are extracted from the temperature dependent resonance frequencies of a set of MEMS resonators fabricated on phosphorus, arsenic and boron doped wafers having maximum doping levels of 7.5 * 1019cm -3, 2.5 * 10 19cm -3 and 3 * 1019cm -3, respectively. Trends in the behavior of the thermal coefficients as a function of doping are identified and discussed

    AB - We study experimentally the temperature dependence of the elastic constants of degenerately doped silicon as a function of the doping level. First and second order thermal coefficients of the elastic constants are extracted from the temperature dependent resonance frequencies of a set of MEMS resonators fabricated on phosphorus, arsenic and boron doped wafers having maximum doping levels of 7.5 * 1019cm -3, 2.5 * 10 19cm -3 and 3 * 1019cm -3, respectively. Trends in the behavior of the thermal coefficients as a function of doping are identified and discussed

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    Jaakkola A, Prunnila M, Pensala T, Dekker J, Pekko P. Experimental determination of the temperature dependency of the elastic constants of degenerately doped silicon. In Conference Proceeding: Joint European Frequency and Time Forum & International Frequency Control Symposium, EFTF/IFC 2013. IEEE Institute of Electrical and Electronic Engineers . 2013. p. 421-424 https://doi.org/10.1109/EFTF-IFC.2013.6702116