Experimental determination of the temperature dependency of the elastic constants of degenerately doped silicon

Antti Jaakkola; Mika Prunnila; Tuomas Pensala; James Dekker; Panu Pekko

doi:10.1109/EFTF-IFC.2013.6702116

Experimental determination of the temperature dependency of the elastic constants of degenerately doped silicon

Antti Jaakkola, Mika Prunnila, Tuomas Pensala, James Dekker, Panu Pekko

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

2 Citations (Scopus)

Abstract

We study experimentally the temperature dependence of the elastic constants of degenerately doped silicon as a function of the doping level. First and second order thermal coefficients of the elastic constants are extracted from the temperature dependent resonance frequencies of a set of MEMS resonators fabricated on phosphorus, arsenic and boron doped wafers having maximum doping levels of 7.5 * 1019cm -3, 2.5 * 10 19cm -3 and 3 * 1019cm -3, respectively. Trends in the behavior of the thermal coefficients as a function of doping are identified and discussed

Original language	English
Title of host publication	Conference Proceeding
Subtitle of host publication	Joint European Frequency and Time Forum & International Frequency Control Symposium, EFTF/IFC 2013
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	421-424
ISBN (Electronic)	978-1-4799-0341-2
ISBN (Print)	978-1-4799-0342-9
DOIs	https://doi.org/10.1109/EFTF-IFC.2013.6702116
Publication status	Published - 2013
MoE publication type	Not Eligible
Event	Joint European Frequency and Time Forum and International Frequency Control Symposium, EFTF/IFC 2013 - Prague, Czech Republic Duration: 21 Jul 2013 → 25 Jul 2013

Conference

Conference	Joint European Frequency and Time Forum and International Frequency Control Symposium, EFTF/IFC 2013
Abbreviated title	EFTF/IFC 2013
Country/Territory	Czech Republic
City	Prague
Period	21/07/13 → 25/07/13

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10.1109/EFTF-IFC.2013.6702116

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Jaakkola, A., Prunnila, M., Pensala, T., Dekker, J., & Pekko, P. (2013). Experimental determination of the temperature dependency of the elastic constants of degenerately doped silicon. In Conference Proceeding: Joint European Frequency and Time Forum & International Frequency Control Symposium, EFTF/IFC 2013 (pp. 421-424). IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/EFTF-IFC.2013.6702116

Jaakkola, Antti ; Prunnila, Mika ; Pensala, Tuomas ; Dekker, James ; Pekko, Panu. / Experimental determination of the temperature dependency of the elastic constants of degenerately doped silicon. Conference Proceeding: Joint European Frequency and Time Forum & International Frequency Control Symposium, EFTF/IFC 2013. IEEE Institute of Electrical and Electronic Engineers, 2013. pp. 421-424

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title = "Experimental determination of the temperature dependency of the elastic constants of degenerately doped silicon",

abstract = "We study experimentally the temperature dependence of the elastic constants of degenerately doped silicon as a function of the doping level. First and second order thermal coefficients of the elastic constants are extracted from the temperature dependent resonance frequencies of a set of MEMS resonators fabricated on phosphorus, arsenic and boron doped wafers having maximum doping levels of 7.5 * 1019cm -3, 2.5 * 10 19cm -3 and 3 * 1019cm -3, respectively. Trends in the behavior of the thermal coefficients as a function of doping are identified and discussed",

author = "Antti Jaakkola and Mika Prunnila and Tuomas Pensala and James Dekker and Panu Pekko",

year = "2013",

doi = "10.1109/EFTF-IFC.2013.6702116",

language = "English",

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booktitle = "Conference Proceeding",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

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note = "Joint European Frequency and Time Forum and International Frequency Control Symposium, EFTF/IFC 2013, EFTF/IFC 2013 ; Conference date: 21-07-2013 Through 25-07-2013",

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Jaakkola, A, Prunnila, M , Pensala, T , Dekker, J & Pekko, P 2013, Experimental determination of the temperature dependency of the elastic constants of degenerately doped silicon. in Conference Proceeding: Joint European Frequency and Time Forum & International Frequency Control Symposium, EFTF/IFC 2013. IEEE Institute of Electrical and Electronic Engineers, pp. 421-424, Joint European Frequency and Time Forum and International Frequency Control Symposium, EFTF/IFC 2013, Prague, Czech Republic, 21/07/13. https://doi.org/10.1109/EFTF-IFC.2013.6702116

Experimental determination of the temperature dependency of the elastic constants of degenerately doped silicon. / Jaakkola, Antti; Prunnila, Mika ; Pensala, Tuomas ; Dekker, James ; Pekko, Panu.

Conference Proceeding: Joint European Frequency and Time Forum & International Frequency Control Symposium, EFTF/IFC 2013. IEEE Institute of Electrical and Electronic Engineers, 2013. p. 421-424.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

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T1 - Experimental determination of the temperature dependency of the elastic constants of degenerately doped silicon

AU - Jaakkola, Antti

AU - Prunnila, Mika

AU - Pensala, Tuomas

AU - Dekker, James

AU - Pekko, Panu

PY - 2013

Y1 - 2013

N2 - We study experimentally the temperature dependence of the elastic constants of degenerately doped silicon as a function of the doping level. First and second order thermal coefficients of the elastic constants are extracted from the temperature dependent resonance frequencies of a set of MEMS resonators fabricated on phosphorus, arsenic and boron doped wafers having maximum doping levels of 7.5 * 1019cm -3, 2.5 * 10 19cm -3 and 3 * 1019cm -3, respectively. Trends in the behavior of the thermal coefficients as a function of doping are identified and discussed

AB - We study experimentally the temperature dependence of the elastic constants of degenerately doped silicon as a function of the doping level. First and second order thermal coefficients of the elastic constants are extracted from the temperature dependent resonance frequencies of a set of MEMS resonators fabricated on phosphorus, arsenic and boron doped wafers having maximum doping levels of 7.5 * 1019cm -3, 2.5 * 10 19cm -3 and 3 * 1019cm -3, respectively. Trends in the behavior of the thermal coefficients as a function of doping are identified and discussed

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DO - 10.1109/EFTF-IFC.2013.6702116

M3 - Conference article in proceedings

SN - 978-1-4799-0342-9

SP - 421

EP - 424

BT - Conference Proceeding

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - Joint European Frequency and Time Forum and International Frequency Control Symposium, EFTF/IFC 2013

Y2 - 21 July 2013 through 25 July 2013

ER -

Jaakkola A, Prunnila M , Pensala T , Dekker J , Pekko P. Experimental determination of the temperature dependency of the elastic constants of degenerately doped silicon. In Conference Proceeding: Joint European Frequency and Time Forum & International Frequency Control Symposium, EFTF/IFC 2013. IEEE Institute of Electrical and Electronic Engineers. 2013. p. 421-424 https://doi.org/10.1109/EFTF-IFC.2013.6702116

Experimental determination of the temperature dependency of the elastic constants of degenerately doped silicon

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