Abstract
| Original language | English |
|---|---|
| Title of host publication | Conference Proceeding |
| Subtitle of host publication | Joint European Frequency and Time Forum & International Frequency Control Symposium, EFTF/IFC 2013 |
| Publisher | Institute of Electrical and Electronic Engineers IEEE |
| Pages | 421-424 |
| ISBN (Electronic) | 978-1-4799-0341-2 |
| ISBN (Print) | 978-1-4799-0342-9 |
| DOIs | |
| Publication status | Published - 2013 |
| MoE publication type | Not Eligible |
| Event | Joint European Frequency and Time Forum and International Frequency Control Symposium, EFTF/IFC 2013 - Prague, Czech Republic Duration: 21 Jul 2013 → 25 Jul 2013 |
Conference
| Conference | Joint European Frequency and Time Forum and International Frequency Control Symposium, EFTF/IFC 2013 |
|---|---|
| Abbreviated title | EFTF/IFC 2013 |
| Country | Czech Republic |
| City | Prague |
| Period | 21/07/13 → 25/07/13 |
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Experimental determination of the temperature dependency of the elastic constants of degenerately doped silicon. / Jaakkola, Antti; Prunnila, Mika; Pensala, Tuomas; Dekker, James; Pekko, Panu.
Conference Proceeding: Joint European Frequency and Time Forum & International Frequency Control Symposium, EFTF/IFC 2013. Institute of Electrical and Electronic Engineers IEEE, 2013. p. 421-424.Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review
TY - GEN
T1 - Experimental determination of the temperature dependency of the elastic constants of degenerately doped silicon
AU - Jaakkola, Antti
AU - Prunnila, Mika
AU - Pensala, Tuomas
AU - Dekker, James
AU - Pekko, Panu
PY - 2013
Y1 - 2013
N2 - We study experimentally the temperature dependence of the elastic constants of degenerately doped silicon as a function of the doping level. First and second order thermal coefficients of the elastic constants are extracted from the temperature dependent resonance frequencies of a set of MEMS resonators fabricated on phosphorus, arsenic and boron doped wafers having maximum doping levels of 7.5 * 1019cm -3, 2.5 * 10 19cm -3 and 3 * 1019cm -3, respectively. Trends in the behavior of the thermal coefficients as a function of doping are identified and discussed
AB - We study experimentally the temperature dependence of the elastic constants of degenerately doped silicon as a function of the doping level. First and second order thermal coefficients of the elastic constants are extracted from the temperature dependent resonance frequencies of a set of MEMS resonators fabricated on phosphorus, arsenic and boron doped wafers having maximum doping levels of 7.5 * 1019cm -3, 2.5 * 10 19cm -3 and 3 * 1019cm -3, respectively. Trends in the behavior of the thermal coefficients as a function of doping are identified and discussed
U2 - 10.1109/EFTF-IFC.2013.6702116
DO - 10.1109/EFTF-IFC.2013.6702116
M3 - Conference article in proceedings
SN - 978-1-4799-0342-9
SP - 421
EP - 424
BT - Conference Proceeding
PB - Institute of Electrical and Electronic Engineers IEEE
ER -