TY - JOUR
T1 - Experimental identification of the doping deactivation mechanism in semiconductors
T2 - Application to nitrogen in ZnS0.06Se0.94
AU - Oila, J.
AU - Saarinen, K.
AU - Laine, T.
AU - Hautojärvi, Pekka
AU - Uusimaa, P.
AU - Pessa, Markus
AU - Likonen, Jari
N1 - Project code: KET4134
PY - 1999
Y1 - 1999
N2 - We show that quantitative information on the electrical deactivation of doping can be obtained by combining the results of positron annihilation, secondary ion-mass spectrometry, and capacitance-voltage measurements. By applying this method to study the N doping of ZnS0.06Se0.94, we can conclude that the fraction of electrically inactive nitrogen may vary from 0% to 80%, depending strongly on the growth conditions. About 40% of the electrically active N exist in the isolated acceptor configuration NSe- and another 40% is bound to compensating donors, most probably to (ZniNSe)1+ and (VSeNSe)1+ pairs. Typically 20% forms negative (VSeNSe)1- complexes with the Se vacancy.
AB - We show that quantitative information on the electrical deactivation of doping can be obtained by combining the results of positron annihilation, secondary ion-mass spectrometry, and capacitance-voltage measurements. By applying this method to study the N doping of ZnS0.06Se0.94, we can conclude that the fraction of electrically inactive nitrogen may vary from 0% to 80%, depending strongly on the growth conditions. About 40% of the electrically active N exist in the isolated acceptor configuration NSe- and another 40% is bound to compensating donors, most probably to (ZniNSe)1+ and (VSeNSe)1+ pairs. Typically 20% forms negative (VSeNSe)1- complexes with the Se vacancy.
U2 - 10.1103/PhysRevB.59.R12736
DO - 10.1103/PhysRevB.59.R12736
M3 - Article
SN - 1098-0121
VL - 59
SP - 12736
EP - 12739
JO - Physical Review B: Condensed Matter and Materials Physics
JF - Physical Review B: Condensed Matter and Materials Physics
IS - 20
ER -