Experimental identification of the doping deactivation mechanism in semiconductors: Application to nitrogen in ZnS0.06Se0.94

J. Oila, K. Saarinen, T. Laine, Pekka Hautojärvi, P. Uusimaa, Markus Pessa, Jari Likonen

    Research output: Contribution to journalArticleScientificpeer-review

    9 Citations (Scopus)

    Abstract

    We show that quantitative information on the electrical deactivation of doping can be obtained by combining the results of positron annihilation, secondary ion-mass spectrometry, and capacitance-voltage measurements. By applying this method to study the N doping of ZnS0.06Se0.94, we can conclude that the fraction of electrically inactive nitrogen may vary from 0% to 80%, depending strongly on the growth conditions. About 40% of the electrically active N exist in the isolated acceptor configuration NSe- and another 40% is bound to compensating donors, most probably to (ZniNSe)1+ and (VSeNSe)1+ pairs. Typically 20% forms negative (VSeNSe)1- complexes with the Se vacancy. 
    Original languageEnglish
    Pages (from-to)12736-12739
    Number of pages4
    JournalPhysical Review B: Condensed Matter and Materials Physics
    Volume59
    Issue number20
    DOIs
    Publication statusPublished - 1999
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    deactivation
    Nitrogen
    Doping (additives)
    Semiconductor materials
    nitrogen
    Positron annihilation
    Capacitance measurement
    Voltage measurement
    Secondary ion mass spectrometry
    positron annihilation
    electrical measurement
    secondary ion mass spectrometry
    Vacancies
    capacitance
    configurations

    Cite this

    Oila, J. ; Saarinen, K. ; Laine, T. ; Hautojärvi, Pekka ; Uusimaa, P. ; Pessa, Markus ; Likonen, Jari. / Experimental identification of the doping deactivation mechanism in semiconductors : Application to nitrogen in ZnS0.06Se0.94. In: Physical Review B: Condensed Matter and Materials Physics. 1999 ; Vol. 59, No. 20. pp. 12736-12739.
    @article{aa2f07c6d546488585d2db936bd604ff,
    title = "Experimental identification of the doping deactivation mechanism in semiconductors: Application to nitrogen in ZnS0.06Se0.94",
    abstract = "We show that quantitative information on the electrical deactivation of doping can be obtained by combining the results of positron annihilation, secondary ion-mass spectrometry, and capacitance-voltage measurements. By applying this method to study the N doping of ZnS0.06Se0.94, we can conclude that the fraction of electrically inactive nitrogen may vary from 0{\%} to 80{\%}, depending strongly on the growth conditions. About 40{\%} of the electrically active N exist in the isolated acceptor configuration NSe- and another 40{\%} is bound to compensating donors, most probably to (ZniNSe)1+ and (VSeNSe)1+ pairs. Typically 20{\%} forms negative (VSeNSe)1- complexes with the Se vacancy. ",
    author = "J. Oila and K. Saarinen and T. Laine and Pekka Hautoj{\"a}rvi and P. Uusimaa and Markus Pessa and Jari Likonen",
    note = "Project code: KET4134",
    year = "1999",
    doi = "10.1103/PhysRevB.59.R12736",
    language = "English",
    volume = "59",
    pages = "12736--12739",
    journal = "Physical Review B",
    issn = "2469-9950",
    publisher = "American Physical Society",
    number = "20",

    }

    Experimental identification of the doping deactivation mechanism in semiconductors : Application to nitrogen in ZnS0.06Se0.94. / Oila, J.; Saarinen, K.; Laine, T.; Hautojärvi, Pekka; Uusimaa, P.; Pessa, Markus; Likonen, Jari.

    In: Physical Review B: Condensed Matter and Materials Physics, Vol. 59, No. 20, 1999, p. 12736-12739.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Experimental identification of the doping deactivation mechanism in semiconductors

    T2 - Application to nitrogen in ZnS0.06Se0.94

    AU - Oila, J.

    AU - Saarinen, K.

    AU - Laine, T.

    AU - Hautojärvi, Pekka

    AU - Uusimaa, P.

    AU - Pessa, Markus

    AU - Likonen, Jari

    N1 - Project code: KET4134

    PY - 1999

    Y1 - 1999

    N2 - We show that quantitative information on the electrical deactivation of doping can be obtained by combining the results of positron annihilation, secondary ion-mass spectrometry, and capacitance-voltage measurements. By applying this method to study the N doping of ZnS0.06Se0.94, we can conclude that the fraction of electrically inactive nitrogen may vary from 0% to 80%, depending strongly on the growth conditions. About 40% of the electrically active N exist in the isolated acceptor configuration NSe- and another 40% is bound to compensating donors, most probably to (ZniNSe)1+ and (VSeNSe)1+ pairs. Typically 20% forms negative (VSeNSe)1- complexes with the Se vacancy. 

    AB - We show that quantitative information on the electrical deactivation of doping can be obtained by combining the results of positron annihilation, secondary ion-mass spectrometry, and capacitance-voltage measurements. By applying this method to study the N doping of ZnS0.06Se0.94, we can conclude that the fraction of electrically inactive nitrogen may vary from 0% to 80%, depending strongly on the growth conditions. About 40% of the electrically active N exist in the isolated acceptor configuration NSe- and another 40% is bound to compensating donors, most probably to (ZniNSe)1+ and (VSeNSe)1+ pairs. Typically 20% forms negative (VSeNSe)1- complexes with the Se vacancy. 

    U2 - 10.1103/PhysRevB.59.R12736

    DO - 10.1103/PhysRevB.59.R12736

    M3 - Article

    VL - 59

    SP - 12736

    EP - 12739

    JO - Physical Review B

    JF - Physical Review B

    SN - 2469-9950

    IS - 20

    ER -