We show that quantitative information on the electrical deactivation of doping can be obtained by combining the results of positron annihilation, secondary ion-mass spectrometry, and capacitance-voltage measurements. By applying this method to study the N doping of ZnS0.06Se0.94, we can conclude that the fraction of electrically inactive nitrogen may vary from 0% to 80%, depending strongly on the growth conditions. About 40% of the electrically active N exist in the isolated acceptor configuration NSe- and another 40% is bound to compensating donors, most probably to (ZniNSe)1+ and (VSeNSe)1+ pairs. Typically 20% forms negative (VSeNSe)1- complexes with the Se vacancy.
|Number of pages||4|
|Journal||Physical Review B: Condensed Matter and Materials Physics|
|Publication status||Published - 1999|
|MoE publication type||A1 Journal article-refereed|
Oila, J., Saarinen, K., Laine, T., Hautojärvi, P., Uusimaa, P., Pessa, M., & Likonen, J. (1999). Experimental identification of the doping deactivation mechanism in semiconductors: Application to nitrogen in ZnS0.06Se0.94. Physical Review B: Condensed Matter and Materials Physics, 59(20), 12736-12739. https://doi.org/10.1103/PhysRevB.59.R12736