Experimental identification of the doping deactivation mechanism in semiconductors: Application to nitrogen in ZnS0.06Se0.94

J. Oila, K. Saarinen, T. Laine, Pekka Hautojärvi, P. Uusimaa, Markus Pessa, Jari Likonen

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    We show that quantitative information on the electrical deactivation of doping can be obtained by combining the results of positron annihilation, secondary ion-mass spectrometry, and capacitance-voltage measurements. By applying this method to study the N doping of ZnS0.06Se0.94, we can conclude that the fraction of electrically inactive nitrogen may vary from 0% to 80%, depending strongly on the growth conditions. About 40% of the electrically active N exist in the isolated acceptor configuration NSe- and another 40% is bound to compensating donors, most probably to (ZniNSe)1+ and (VSeNSe)1+ pairs. Typically 20% forms negative (VSeNSe)1- complexes with the Se vacancy. 
    Original languageEnglish
    Pages (from-to)12736-12739
    Number of pages4
    JournalPhysical Review B: Condensed Matter and Materials Physics
    Issue number20
    Publication statusPublished - 1999
    MoE publication typeA1 Journal article-refereed


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