Experimental identification of the doping deactivation mechanism in semiconductors

Application to nitrogen in ZnS0.06Se0.94

J. Oila, K. Saarinen, T. Laine, Pekka Hautojärvi, P. Uusimaa, Markus Pessa, Jari Likonen

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

We show that quantitative information on the electrical deactivation of doping can be obtained by combining the results of positron annihilation, secondary ion-mass spectrometry, and capacitance-voltage measurements. By applying this method to study the N doping of ZnS0.06Se0.94, we can conclude that the fraction of electrically inactive nitrogen may vary from 0% to 80%, depending strongly on the growth conditions. About 40% of the electrically active N exist in the isolated acceptor configuration NSe- and another 40% is bound to compensating donors, most probably to (ZniNSe)1+ and (VSeNSe)1+ pairs. Typically 20% forms negative (VSeNSe)1- complexes with the Se vacancy. 
Original languageEnglish
Pages (from-to)12736-12739
Number of pages4
JournalPhysical Review B: Condensed Matter and Materials Physics
Volume59
Issue number20
DOIs
Publication statusPublished - 1999
MoE publication typeA1 Journal article-refereed

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deactivation
Nitrogen
Doping (additives)
Semiconductor materials
nitrogen
Positron annihilation
Capacitance measurement
Voltage measurement
Secondary ion mass spectrometry
positron annihilation
electrical measurement
secondary ion mass spectrometry
Vacancies
capacitance
configurations

Cite this

Oila, J. ; Saarinen, K. ; Laine, T. ; Hautojärvi, Pekka ; Uusimaa, P. ; Pessa, Markus ; Likonen, Jari. / Experimental identification of the doping deactivation mechanism in semiconductors : Application to nitrogen in ZnS0.06Se0.94. In: Physical Review B: Condensed Matter and Materials Physics. 1999 ; Vol. 59, No. 20. pp. 12736-12739.
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abstract = "We show that quantitative information on the electrical deactivation of doping can be obtained by combining the results of positron annihilation, secondary ion-mass spectrometry, and capacitance-voltage measurements. By applying this method to study the N doping of ZnS0.06Se0.94, we can conclude that the fraction of electrically inactive nitrogen may vary from 0{\%} to 80{\%}, depending strongly on the growth conditions. About 40{\%} of the electrically active N exist in the isolated acceptor configuration NSe- and another 40{\%} is bound to compensating donors, most probably to (ZniNSe)1+ and (VSeNSe)1+ pairs. Typically 20{\%} forms negative (VSeNSe)1- complexes with the Se vacancy. ",
author = "J. Oila and K. Saarinen and T. Laine and Pekka Hautoj{\"a}rvi and P. Uusimaa and Markus Pessa and Jari Likonen",
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Experimental identification of the doping deactivation mechanism in semiconductors : Application to nitrogen in ZnS0.06Se0.94. / Oila, J.; Saarinen, K.; Laine, T.; Hautojärvi, Pekka; Uusimaa, P.; Pessa, Markus; Likonen, Jari.

In: Physical Review B: Condensed Matter and Materials Physics, Vol. 59, No. 20, 1999, p. 12736-12739.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Experimental identification of the doping deactivation mechanism in semiconductors

T2 - Application to nitrogen in ZnS0.06Se0.94

AU - Oila, J.

AU - Saarinen, K.

AU - Laine, T.

AU - Hautojärvi, Pekka

AU - Uusimaa, P.

AU - Pessa, Markus

AU - Likonen, Jari

N1 - Project code: KET4134

PY - 1999

Y1 - 1999

N2 - We show that quantitative information on the electrical deactivation of doping can be obtained by combining the results of positron annihilation, secondary ion-mass spectrometry, and capacitance-voltage measurements. By applying this method to study the N doping of ZnS0.06Se0.94, we can conclude that the fraction of electrically inactive nitrogen may vary from 0% to 80%, depending strongly on the growth conditions. About 40% of the electrically active N exist in the isolated acceptor configuration NSe- and another 40% is bound to compensating donors, most probably to (ZniNSe)1+ and (VSeNSe)1+ pairs. Typically 20% forms negative (VSeNSe)1- complexes with the Se vacancy. 

AB - We show that quantitative information on the electrical deactivation of doping can be obtained by combining the results of positron annihilation, secondary ion-mass spectrometry, and capacitance-voltage measurements. By applying this method to study the N doping of ZnS0.06Se0.94, we can conclude that the fraction of electrically inactive nitrogen may vary from 0% to 80%, depending strongly on the growth conditions. About 40% of the electrically active N exist in the isolated acceptor configuration NSe- and another 40% is bound to compensating donors, most probably to (ZniNSe)1+ and (VSeNSe)1+ pairs. Typically 20% forms negative (VSeNSe)1- complexes with the Se vacancy. 

U2 - 10.1103/PhysRevB.59.R12736

DO - 10.1103/PhysRevB.59.R12736

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SP - 12736

EP - 12739

JO - Physical Review B

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