Experimental investigation of traps in THz Schottky diodes

Subash Khanal, Tero Kiuru, Heikki Seppä, Juha Mallat, Petri Piironen, Antti V. Räisänen

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    Abstract

    In this paper, indications of charge trapping in THz Schottky diodes are investigated with various measurement techniques including current-voltage, capacitance and low-frequency noise measurements. GaAs diodes from various manufacturers are tested. For comparison purposes, results for two different diode samples are presented. Correlation between different measurement techniques is observed which indicate the presence of traps in measured Schottky diode samples. I-V and C-V measurements show some trapping behavior. However, it is also important to observe frequency dependency of the diode capacitance and low-frequency noise properties to closely monitor the charge trapping in small area Schottky diodes. Diode samples are measured in on-wafer environment using a probe station.
    Original languageEnglish
    Title of host publicationMillimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications, 2016 Global Symposium on
    PublisherIEEE Institute of Electrical and Electronic Engineers
    Pages1-4
    ISBN (Electronic)978-1-5090-1348-7
    DOIs
    Publication statusPublished - 30 Jun 2016
    MoE publication typeA4 Article in a conference publication
    Event2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications - Aalto University, Espoo, Finland
    Duration: 6 Jun 20168 Jun 2016

    Conference

    Conference2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications
    Abbreviated titleGSMM 2016
    CountryFinland
    CityEspoo
    Period6/06/168/06/16
    OtherThe main theme of the joint conference is MILLIMETER-WAVE AND TERAHERTZ SENSING AND COMMUNICATIONS. It covers millimeterwave and THz antennas, circuits, devices, systems and applications.

    Fingerprint

    Schottky diodes
    diodes
    traps
    trapping
    capacitance
    low frequencies
    noise measurement
    indication
    stations
    wafers
    probes
    electric potential

    Keywords

    • Low-frequency noise
    • measurement
    • Schottky diode
    • traps

    Cite this

    Khanal, S., Kiuru, T., Seppä, H., Mallat, J., Piironen, P., & Räisänen, A. V. (2016). Experimental investigation of traps in THz Schottky diodes. In Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications, 2016 Global Symposium on (pp. 1-4). IEEE Institute of Electrical and Electronic Engineers . https://doi.org/10.1109/GSMM.2016.7500306
    Khanal, Subash ; Kiuru, Tero ; Seppä, Heikki ; Mallat, Juha ; Piironen, Petri ; Räisänen, Antti V. / Experimental investigation of traps in THz Schottky diodes. Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications, 2016 Global Symposium on . IEEE Institute of Electrical and Electronic Engineers , 2016. pp. 1-4
    @inproceedings{6fdd3630bc49499586c776bb5f001494,
    title = "Experimental investigation of traps in THz Schottky diodes",
    abstract = "In this paper, indications of charge trapping in THz Schottky diodes are investigated with various measurement techniques including current-voltage, capacitance and low-frequency noise measurements. GaAs diodes from various manufacturers are tested. For comparison purposes, results for two different diode samples are presented. Correlation between different measurement techniques is observed which indicate the presence of traps in measured Schottky diode samples. I-V and C-V measurements show some trapping behavior. However, it is also important to observe frequency dependency of the diode capacitance and low-frequency noise properties to closely monitor the charge trapping in small area Schottky diodes. Diode samples are measured in on-wafer environment using a probe station.",
    keywords = "Low-frequency noise, measurement, Schottky diode, traps",
    author = "Subash Khanal and Tero Kiuru and Heikki Sepp{\"a} and Juha Mallat and Petri Piironen and R{\"a}is{\"a}nen, {Antti V.}",
    year = "2016",
    month = "6",
    day = "30",
    doi = "10.1109/GSMM.2016.7500306",
    language = "English",
    pages = "1--4",
    booktitle = "Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications, 2016 Global Symposium on",
    publisher = "IEEE Institute of Electrical and Electronic Engineers",
    address = "United States",

    }

    Khanal, S, Kiuru, T, Seppä, H, Mallat, J, Piironen, P & Räisänen, AV 2016, Experimental investigation of traps in THz Schottky diodes. in Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications, 2016 Global Symposium on . IEEE Institute of Electrical and Electronic Engineers , pp. 1-4, 2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications, Espoo, Finland, 6/06/16. https://doi.org/10.1109/GSMM.2016.7500306

    Experimental investigation of traps in THz Schottky diodes. / Khanal, Subash; Kiuru, Tero; Seppä, Heikki; Mallat, Juha; Piironen, Petri; Räisänen, Antti V.

    Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications, 2016 Global Symposium on . IEEE Institute of Electrical and Electronic Engineers , 2016. p. 1-4.

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    TY - GEN

    T1 - Experimental investigation of traps in THz Schottky diodes

    AU - Khanal, Subash

    AU - Kiuru, Tero

    AU - Seppä, Heikki

    AU - Mallat, Juha

    AU - Piironen, Petri

    AU - Räisänen, Antti V.

    PY - 2016/6/30

    Y1 - 2016/6/30

    N2 - In this paper, indications of charge trapping in THz Schottky diodes are investigated with various measurement techniques including current-voltage, capacitance and low-frequency noise measurements. GaAs diodes from various manufacturers are tested. For comparison purposes, results for two different diode samples are presented. Correlation between different measurement techniques is observed which indicate the presence of traps in measured Schottky diode samples. I-V and C-V measurements show some trapping behavior. However, it is also important to observe frequency dependency of the diode capacitance and low-frequency noise properties to closely monitor the charge trapping in small area Schottky diodes. Diode samples are measured in on-wafer environment using a probe station.

    AB - In this paper, indications of charge trapping in THz Schottky diodes are investigated with various measurement techniques including current-voltage, capacitance and low-frequency noise measurements. GaAs diodes from various manufacturers are tested. For comparison purposes, results for two different diode samples are presented. Correlation between different measurement techniques is observed which indicate the presence of traps in measured Schottky diode samples. I-V and C-V measurements show some trapping behavior. However, it is also important to observe frequency dependency of the diode capacitance and low-frequency noise properties to closely monitor the charge trapping in small area Schottky diodes. Diode samples are measured in on-wafer environment using a probe station.

    KW - Low-frequency noise

    KW - measurement

    KW - Schottky diode

    KW - traps

    U2 - 10.1109/GSMM.2016.7500306

    DO - 10.1109/GSMM.2016.7500306

    M3 - Conference article in proceedings

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    BT - Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications, 2016 Global Symposium on

    PB - IEEE Institute of Electrical and Electronic Engineers

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    Khanal S, Kiuru T, Seppä H, Mallat J, Piironen P, Räisänen AV. Experimental investigation of traps in THz Schottky diodes. In Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications, 2016 Global Symposium on . IEEE Institute of Electrical and Electronic Engineers . 2016. p. 1-4 https://doi.org/10.1109/GSMM.2016.7500306