Experimental investigation of traps in THz Schottky diodes

Subash Khanal; Tero Kiuru; Heikki Seppä; Juha Mallat; Petri Piironen; Antti V. Räisänen

doi:10.1109/GSMM.2016.7500306

Experimental investigation of traps in THz Schottky diodes

Subash Khanal, Tero Kiuru, Heikki Seppä, Juha Mallat, Petri Piironen, Antti V. Räisänen

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

In this paper, indications of charge trapping in THz Schottky diodes are investigated with various measurement techniques including current-voltage, capacitance and low-frequency noise measurements. GaAs diodes from various manufacturers are tested. For comparison purposes, results for two different diode samples are presented. Correlation between different measurement techniques is observed which indicate the presence of traps in measured Schottky diode samples. I-V and C-V measurements show some trapping behavior. However, it is also important to observe frequency dependency of the diode capacitance and low-frequency noise properties to closely monitor the charge trapping in small area Schottky diodes. Diode samples are measured in on-wafer environment using a probe station.

Original language	English
Title of host publication	Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications, 2016 Global Symposium on
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	1-4
ISBN (Electronic)	978-1-5090-1348-7
DOIs	https://doi.org/10.1109/GSMM.2016.7500306
Publication status	Published - 30 Jun 2016
MoE publication type	A4 Article in a conference publication
Event	2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications - Aalto University, Espoo, Finland Duration: 6 Jun 2016 → 8 Jun 2016

Conference

Conference	2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications
Abbreviated title	GSMM 2016
Country/Territory	Finland
City	Espoo
Period	6/06/16 → 8/06/16
Other	The main theme of the joint conference is MILLIMETER-WAVE AND TERAHERTZ SENSING AND COMMUNICATIONS. It covers millimeterwave and THz antennas, circuits, devices, systems and applications.

Keywords

Low-frequency noise
measurement
Schottky diode
traps
OtaNano

Access to Document

10.1109/GSMM.2016.7500306

OtaNano
VTT Technical Research Centre of Finland
Facility/equipment: Facility

Cite this

Khanal, S., Kiuru, T., Seppä, H., Mallat, J., Piironen, P., & Räisänen, A. V. (2016). Experimental investigation of traps in THz Schottky diodes. In Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications, 2016 Global Symposium on (pp. 1-4). IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/GSMM.2016.7500306

@inproceedings{6fdd3630bc49499586c776bb5f001494,

title = "Experimental investigation of traps in THz Schottky diodes",

abstract = "In this paper, indications of charge trapping in THz Schottky diodes are investigated with various measurement techniques including current-voltage, capacitance and low-frequency noise measurements. GaAs diodes from various manufacturers are tested. For comparison purposes, results for two different diode samples are presented. Correlation between different measurement techniques is observed which indicate the presence of traps in measured Schottky diode samples. I-V and C-V measurements show some trapping behavior. However, it is also important to observe frequency dependency of the diode capacitance and low-frequency noise properties to closely monitor the charge trapping in small area Schottky diodes. Diode samples are measured in on-wafer environment using a probe station.",

keywords = "Low-frequency noise, measurement, Schottky diode, traps, OtaNano",

author = "Subash Khanal and Tero Kiuru and Heikki Sepp{\"a} and Juha Mallat and Petri Piironen and R{\"a}is{\"a}nen, {Antti V.}",

year = "2016",

month = jun,

day = "30",

doi = "10.1109/GSMM.2016.7500306",

language = "English",

pages = "1--4",

booktitle = "Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications, 2016 Global Symposium on",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

note = "2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications, GSMM 2016 ; Conference date: 06-06-2016 Through 08-06-2016",

}

Khanal, S, Kiuru, T, Seppä, H, Mallat, J, Piironen, P & Räisänen, AV 2016, Experimental investigation of traps in THz Schottky diodes. in Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications, 2016 Global Symposium on . IEEE Institute of Electrical and Electronic Engineers, pp. 1-4, 2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications, Espoo, Finland, 6/06/16. https://doi.org/10.1109/GSMM.2016.7500306

Experimental investigation of traps in THz Schottky diodes. / Khanal, Subash; Kiuru, Tero; Seppä, Heikki et al.
Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications, 2016 Global Symposium on . IEEE Institute of Electrical and Electronic Engineers, 2016. p. 1-4.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Experimental investigation of traps in THz Schottky diodes

AU - Khanal, Subash

AU - Kiuru, Tero

AU - Seppä, Heikki

AU - Mallat, Juha

AU - Piironen, Petri

AU - Räisänen, Antti V.

PY - 2016/6/30

Y1 - 2016/6/30

N2 - In this paper, indications of charge trapping in THz Schottky diodes are investigated with various measurement techniques including current-voltage, capacitance and low-frequency noise measurements. GaAs diodes from various manufacturers are tested. For comparison purposes, results for two different diode samples are presented. Correlation between different measurement techniques is observed which indicate the presence of traps in measured Schottky diode samples. I-V and C-V measurements show some trapping behavior. However, it is also important to observe frequency dependency of the diode capacitance and low-frequency noise properties to closely monitor the charge trapping in small area Schottky diodes. Diode samples are measured in on-wafer environment using a probe station.

AB - In this paper, indications of charge trapping in THz Schottky diodes are investigated with various measurement techniques including current-voltage, capacitance and low-frequency noise measurements. GaAs diodes from various manufacturers are tested. For comparison purposes, results for two different diode samples are presented. Correlation between different measurement techniques is observed which indicate the presence of traps in measured Schottky diode samples. I-V and C-V measurements show some trapping behavior. However, it is also important to observe frequency dependency of the diode capacitance and low-frequency noise properties to closely monitor the charge trapping in small area Schottky diodes. Diode samples are measured in on-wafer environment using a probe station.

KW - Low-frequency noise

KW - measurement

KW - Schottky diode

KW - traps

KW - OtaNano

U2 - 10.1109/GSMM.2016.7500306

DO - 10.1109/GSMM.2016.7500306

M3 - Conference article in proceedings

SP - 1

EP - 4

BT - Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications, 2016 Global Symposium on

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - 2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications

Y2 - 6 June 2016 through 8 June 2016

ER -

Experimental investigation of traps in THz Schottky diodes

Abstract

Conference

Keywords

Access to Document

Fingerprint

Equipment

OtaNano

Cite this