Experimental investigation of traps in THz Schottky diodes

Subash Khanal, Tero Kiuru, Heikki Seppä, Juha Mallat, Petri Piironen, Antti V. Räisänen

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

In this paper, indications of charge trapping in THz Schottky diodes are investigated with various measurement techniques including current-voltage, capacitance and low-frequency noise measurements. GaAs diodes from various manufacturers are tested. For comparison purposes, results for two different diode samples are presented. Correlation between different measurement techniques is observed which indicate the presence of traps in measured Schottky diode samples. I-V and C-V measurements show some trapping behavior. However, it is also important to observe frequency dependency of the diode capacitance and low-frequency noise properties to closely monitor the charge trapping in small area Schottky diodes. Diode samples are measured in on-wafer environment using a probe station.
Original languageEnglish
Title of host publicationMillimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications, 2016 Global Symposium on
PublisherInstitute of Electrical and Electronic Engineers IEEE
Pages1-4
ISBN (Electronic)978-1-5090-1348-7
DOIs
Publication statusPublished - 30 Jun 2016
MoE publication typeA4 Article in a conference publication
Event2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications - Aalto University, Espoo, Finland
Duration: 6 Jun 20168 Jun 2016

Conference

Conference2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications
Abbreviated titleGSMM 2016
CountryFinland
CityEspoo
Period6/06/168/06/16
OtherThe main theme of the joint conference is MILLIMETER-WAVE AND TERAHERTZ SENSING AND COMMUNICATIONS. It covers millimeterwave and THz antennas, circuits, devices, systems and applications.

Fingerprint

Schottky diodes
diodes
traps
trapping
capacitance
low frequencies
noise measurement
indication
stations
wafers
probes
electric potential

Keywords

  • Low-frequency noise
  • measurement
  • Schottky diode
  • traps

Cite this

Khanal, S., Kiuru, T., Seppä, H., Mallat, J., Piironen, P., & Räisänen, A. V. (2016). Experimental investigation of traps in THz Schottky diodes. In Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications, 2016 Global Symposium on (pp. 1-4). Institute of Electrical and Electronic Engineers IEEE. https://doi.org/10.1109/GSMM.2016.7500306
Khanal, Subash ; Kiuru, Tero ; Seppä, Heikki ; Mallat, Juha ; Piironen, Petri ; Räisänen, Antti V. / Experimental investigation of traps in THz Schottky diodes. Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications, 2016 Global Symposium on . Institute of Electrical and Electronic Engineers IEEE, 2016. pp. 1-4
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title = "Experimental investigation of traps in THz Schottky diodes",
abstract = "In this paper, indications of charge trapping in THz Schottky diodes are investigated with various measurement techniques including current-voltage, capacitance and low-frequency noise measurements. GaAs diodes from various manufacturers are tested. For comparison purposes, results for two different diode samples are presented. Correlation between different measurement techniques is observed which indicate the presence of traps in measured Schottky diode samples. I-V and C-V measurements show some trapping behavior. However, it is also important to observe frequency dependency of the diode capacitance and low-frequency noise properties to closely monitor the charge trapping in small area Schottky diodes. Diode samples are measured in on-wafer environment using a probe station.",
keywords = "Low-frequency noise, measurement, Schottky diode, traps",
author = "Subash Khanal and Tero Kiuru and Heikki Sepp{\"a} and Juha Mallat and Petri Piironen and R{\"a}is{\"a}nen, {Antti V.}",
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Khanal, S, Kiuru, T, Seppä, H, Mallat, J, Piironen, P & Räisänen, AV 2016, Experimental investigation of traps in THz Schottky diodes. in Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications, 2016 Global Symposium on . Institute of Electrical and Electronic Engineers IEEE, pp. 1-4, 2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications, Espoo, Finland, 6/06/16. https://doi.org/10.1109/GSMM.2016.7500306

Experimental investigation of traps in THz Schottky diodes. / Khanal, Subash; Kiuru, Tero; Seppä, Heikki; Mallat, Juha; Piironen, Petri; Räisänen, Antti V.

Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications, 2016 Global Symposium on . Institute of Electrical and Electronic Engineers IEEE, 2016. p. 1-4.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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AU - Räisänen, Antti V.

PY - 2016/6/30

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N2 - In this paper, indications of charge trapping in THz Schottky diodes are investigated with various measurement techniques including current-voltage, capacitance and low-frequency noise measurements. GaAs diodes from various manufacturers are tested. For comparison purposes, results for two different diode samples are presented. Correlation between different measurement techniques is observed which indicate the presence of traps in measured Schottky diode samples. I-V and C-V measurements show some trapping behavior. However, it is also important to observe frequency dependency of the diode capacitance and low-frequency noise properties to closely monitor the charge trapping in small area Schottky diodes. Diode samples are measured in on-wafer environment using a probe station.

AB - In this paper, indications of charge trapping in THz Schottky diodes are investigated with various measurement techniques including current-voltage, capacitance and low-frequency noise measurements. GaAs diodes from various manufacturers are tested. For comparison purposes, results for two different diode samples are presented. Correlation between different measurement techniques is observed which indicate the presence of traps in measured Schottky diode samples. I-V and C-V measurements show some trapping behavior. However, it is also important to observe frequency dependency of the diode capacitance and low-frequency noise properties to closely monitor the charge trapping in small area Schottky diodes. Diode samples are measured in on-wafer environment using a probe station.

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KW - measurement

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Khanal S, Kiuru T, Seppä H, Mallat J, Piironen P, Räisänen AV. Experimental investigation of traps in THz Schottky diodes. In Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications, 2016 Global Symposium on . Institute of Electrical and Electronic Engineers IEEE. 2016. p. 1-4 https://doi.org/10.1109/GSMM.2016.7500306