In this paper, indications of charge trapping in THz Schottky diodes are investigated with various measurement techniques including current-voltage, capacitance and low-frequency noise measurements. GaAs diodes from various manufacturers are tested. For comparison purposes, results for two different diode samples are presented. Correlation between different measurement techniques is observed which indicate the presence of traps in measured Schottky diode samples. I-V and C-V measurements show some trapping behavior. However, it is also important to observe frequency dependency of the diode capacitance and low-frequency noise properties to closely monitor the charge trapping in small area Schottky diodes. Diode samples are measured in on-wafer environment using a probe station.
|Title of host publication
|Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications, 2016 Global Symposium on
|IEEE Institute of Electrical and Electronic Engineers
|Published - 30 Jun 2016
|MoE publication type
|A4 Article in a conference publication
|2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications - Aalto University, Espoo, Finland
Duration: 6 Jun 2016 → 8 Jun 2016
|2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications
|6/06/16 → 8/06/16
|The main theme of the joint conference is MILLIMETER-WAVE AND TERAHERTZ SENSING AND COMMUNICATIONS. It covers millimeterwave and THz antennas, circuits, devices, systems and applications.
- Low-frequency noise
- Schottky diode