Experimental study of carrier density tuning in epitaxial graphene QHR devices

Nick Fletcher; Pierre Gournay; Benjamin Rolland; Martin Götz; Sergei Novikov; Natalia Lebedeva; Alexandre Satrapinski

doi:10.1109/CPEM.2016.7540515

Experimental study of carrier density tuning in epitaxial graphene QHR devices

Nick Fletcher, Pierre Gournay, Benjamin Rolland, Martin Götz, Sergei Novikov, Natalia Lebedeva, Alexandre Satrapinski

VTT Technical Research Centre of Finland

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

2 Citations (Scopus)

Abstract

Adjustment of the charge carrier density in quantized Hall resistance (QHR) devices based on epitaxial SiC graphene films can be performed using photochemical and chemical gating. Our experiments show that the carrier concentration in fabricated graphene devices can be reversibly varied by either treatment with UV light or using molecules from aqua ammonia. Treatment of SiC graphene QHR devices in such a way provides tuning of carrier concentration to optimum values, in the range (1-3) x 10¹¹ cm^-2, at which the dissipation in QHR regime is reduced and the full quantization of Hall resistance is expected.

Original language	English
Title of host publication	2016 Conference on Precision Electromagnetic Measurements (CPEM 2016)
Publisher	IEEE Institute of Electrical and Electronic Engineers
Number of pages	2
ISBN (Electronic)	978-1-4673-9132-0, 978-1-4673-9134-4
ISBN (Print)	978-1-4673-9135-1
DOIs	https://doi.org/10.1109/CPEM.2016.7540515
Publication status	Published - 11 Aug 2016
MoE publication type	A4 Article in a conference publication
Event	Conference on Precision Electromagnetic Measurements, CPEM 2016 - Ottawa, Canada Duration: 10 Jul 2016 → 15 Jul 2016

Conference

Conference	Conference on Precision Electromagnetic Measurements, CPEM 2016
Abbreviated title	CPEM 2016
Country/Territory	Canada
City	Ottawa
Period	10/07/16 → 15/07/16

Keywords

carrier concentration
chemical functionalization
Epitaxial graphene
graphene fabrication
precision measurement

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10.1109/CPEM.2016.7540515

Cite this

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title = "Experimental study of carrier density tuning in epitaxial graphene QHR devices",

abstract = "Adjustment of the charge carrier density in quantized Hall resistance (QHR) devices based on epitaxial SiC graphene films can be performed using photochemical and chemical gating. Our experiments show that the carrier concentration in fabricated graphene devices can be reversibly varied by either treatment with UV light or using molecules from aqua ammonia. Treatment of SiC graphene QHR devices in such a way provides tuning of carrier concentration to optimum values, in the range (1-3) x 1011 cm-2, at which the dissipation in QHR regime is reduced and the full quantization of Hall resistance is expected.",

keywords = "carrier concentration, chemical functionalization, Epitaxial graphene, graphene fabrication, precision measurement",

author = "Nick Fletcher and Pierre Gournay and Benjamin Rolland and Martin G{\"o}tz and Sergei Novikov and Natalia Lebedeva and Alexandre Satrapinski",

year = "2016",

month = aug,

day = "11",

doi = "10.1109/CPEM.2016.7540515",

language = "English",

isbn = "978-1-4673-9135-1",

booktitle = "2016 Conference on Precision Electromagnetic Measurements (CPEM 2016)",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

note = "Conference on Precision Electromagnetic Measurements, CPEM 2016, CPEM 2016 ; Conference date: 10-07-2016 Through 15-07-2016",

}

Fletcher, N, Gournay, P, Rolland, B, Götz, M, Novikov, S, Lebedeva, N & Satrapinski, A 2016, Experimental study of carrier density tuning in epitaxial graphene QHR devices. in 2016 Conference on Precision Electromagnetic Measurements (CPEM 2016)., 7540515, IEEE Institute of Electrical and Electronic Engineers, Conference on Precision Electromagnetic Measurements, CPEM 2016, Ottawa, Canada, 10/07/16. https://doi.org/10.1109/CPEM.2016.7540515

Experimental study of carrier density tuning in epitaxial graphene QHR devices. / Fletcher, Nick; Gournay, Pierre; Rolland, Benjamin et al.

2016 Conference on Precision Electromagnetic Measurements (CPEM 2016). IEEE Institute of Electrical and Electronic Engineers, 2016. 7540515.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Experimental study of carrier density tuning in epitaxial graphene QHR devices

AU - Fletcher, Nick

AU - Gournay, Pierre

AU - Rolland, Benjamin

AU - Götz, Martin

AU - Novikov, Sergei

AU - Lebedeva, Natalia

AU - Satrapinski, Alexandre

PY - 2016/8/11

Y1 - 2016/8/11

N2 - Adjustment of the charge carrier density in quantized Hall resistance (QHR) devices based on epitaxial SiC graphene films can be performed using photochemical and chemical gating. Our experiments show that the carrier concentration in fabricated graphene devices can be reversibly varied by either treatment with UV light or using molecules from aqua ammonia. Treatment of SiC graphene QHR devices in such a way provides tuning of carrier concentration to optimum values, in the range (1-3) x 1011 cm-2, at which the dissipation in QHR regime is reduced and the full quantization of Hall resistance is expected.

AB - Adjustment of the charge carrier density in quantized Hall resistance (QHR) devices based on epitaxial SiC graphene films can be performed using photochemical and chemical gating. Our experiments show that the carrier concentration in fabricated graphene devices can be reversibly varied by either treatment with UV light or using molecules from aqua ammonia. Treatment of SiC graphene QHR devices in such a way provides tuning of carrier concentration to optimum values, in the range (1-3) x 1011 cm-2, at which the dissipation in QHR regime is reduced and the full quantization of Hall resistance is expected.

KW - carrier concentration

KW - chemical functionalization

KW - Epitaxial graphene

KW - graphene fabrication

KW - precision measurement

U2 - 10.1109/CPEM.2016.7540515

DO - 10.1109/CPEM.2016.7540515

M3 - Conference article in proceedings

SN - 978-1-4673-9135-1

BT - 2016 Conference on Precision Electromagnetic Measurements (CPEM 2016)

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - Conference on Precision Electromagnetic Measurements, CPEM 2016

Y2 - 10 July 2016 through 15 July 2016

ER -

Experimental study of carrier density tuning in epitaxial graphene QHR devices

Abstract

Conference

Keywords

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