Experimental study of carrier density tuning in epitaxial graphene QHR devices

Nick Fletcher, Pierre Gournay, Benjamin Rolland, Martin Götz, Sergei Novikov, Natalia Lebedeva, Alexandre Satrapinski

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

2 Citations (Scopus)


Adjustment of the charge carrier density in quantized Hall resistance (QHR) devices based on epitaxial SiC graphene films can be performed using photochemical and chemical gating. Our experiments show that the carrier concentration in fabricated graphene devices can be reversibly varied by either treatment with UV light or using molecules from aqua ammonia. Treatment of SiC graphene QHR devices in such a way provides tuning of carrier concentration to optimum values, in the range (1-3) x 1011 cm-2, at which the dissipation in QHR regime is reduced and the full quantization of Hall resistance is expected.
Original languageEnglish
Title of host publication2016 Conference on Precision Electromagnetic Measurements (CPEM 2016)
PublisherIEEE Institute of Electrical and Electronic Engineers
Number of pages2
ISBN (Electronic)978-1-4673-9132-0, 978-1-4673-9134-4
ISBN (Print)978-1-4673-9135-1
Publication statusPublished - 11 Aug 2016
MoE publication typeA4 Article in a conference publication
EventConference on Precision Electromagnetic Measurements, CPEM 2016 - Ottawa, Canada
Duration: 10 Jul 201615 Jul 2016


ConferenceConference on Precision Electromagnetic Measurements, CPEM 2016
Abbreviated titleCPEM 2016


  • carrier concentration
  • chemical functionalization
  • Epitaxial graphene
  • graphene fabrication
  • precision measurement


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