We report results of a parametric study on a set of single-crystal-silicon plate resonators, whose lateral dimensions are varied so that the main resonance mode occurs at a range of f = 13...30 MHz. The resonator transduction is based on a piezoelectric AlN thin film. Measurements spanning >1000 devices and two wafers indicate that with certain device dimensions the square extensional resonance mode and a higher-order extensional mode are excited with a relatively low frequency scatter of Δf ~ 2 000 ppm (full range). Other resonance modes typically have a frequency scatter larger than 15 000 ppm, which we interpret to be an indication of their flexural character. Additionally, we observe a splitting of the main resonance mode branch at intermediate device dimensions.
|Title of host publication||2010 IEEE International Frequency Control Symposium (FCS). Newport Beach, CA, USA, 1 - 4 June 2010|
|Place of Publication||Piscataway, NJ, USA|
|Publisher||IEEE Institute of Electrical and Electronic Engineers|
|Publication status||Published - 2010|
|MoE publication type||A4 Article in a conference publication|