Experimental study of the effects of size variations on piezoelectrically transduced MEMS resonators

Antti Jaakkola, J. Lamy, James Dekker, Tuomas Pensala

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    6 Citations (Scopus)

    Abstract

    We report results of a parametric study on a set of single-crystal-silicon plate resonators, whose lateral dimensions are varied so that the main resonance mode occurs at a range of f = 13...30 MHz. The resonator transduction is based on a piezoelectric AlN thin film. Measurements spanning >1000 devices and two wafers indicate that with certain device dimensions the square extensional resonance mode and a higher-order extensional mode are excited with a relatively low frequency scatter of Δf ~ 2 000 ppm (full range). Other resonance modes typically have a frequency scatter larger than 15 000 ppm, which we interpret to be an indication of their flexural character. Additionally, we observe a splitting of the main resonance mode branch at intermediate device dimensions.
    Original languageEnglish
    Title of host publication2010 IEEE International Frequency Control Symposium (FCS). Newport Beach, CA, USA, 1 - 4 June 2010
    Place of PublicationPiscataway, NJ, USA
    PublisherIEEE Institute of Electrical and Electronic Engineers
    Pages410-414
    ISBN (Print)978-1-4244-6399-2
    DOIs
    Publication statusPublished - 2010
    MoE publication typeA4 Article in a conference publication

    Fingerprint Dive into the research topics of 'Experimental study of the effects of size variations on piezoelectrically transduced MEMS resonators'. Together they form a unique fingerprint.

  • Cite this

    Jaakkola, A., Lamy, J., Dekker, J., & Pensala, T. (2010). Experimental study of the effects of size variations on piezoelectrically transduced MEMS resonators. In 2010 IEEE International Frequency Control Symposium (FCS). Newport Beach, CA, USA, 1 - 4 June 2010 (pp. 410-414). IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/FREQ.2010.5556299