Abstract
We report results of a parametric study on a set of single-crystal-silicon plate resonators, whose lateral dimensions are varied so that the main resonance mode occurs at a range of f = 13...30 MHz. The resonator transduction is based on a piezoelectric AlN thin film. Measurements spanning >1000 devices and two wafers indicate that with certain device dimensions the square extensional resonance mode and a higher-order extensional mode are excited with a relatively low frequency scatter of Δf ~ 2 000 ppm (full range). Other resonance modes typically have a frequency scatter larger than 15 000 ppm, which we interpret to be an indication of their flexural character. Additionally, we observe a splitting of the main resonance mode branch at intermediate device dimensions.
| Original language | English |
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| Title of host publication | 2010 IEEE International Frequency Control Symposium (FCS). Newport Beach, CA, USA, 1 - 4 June 2010 |
| Place of Publication | Piscataway, NJ, USA |
| Publisher | IEEE Institute of Electrical and Electronic Engineers |
| Pages | 410-414 |
| ISBN (Print) | 978-1-4244-6399-2 |
| DOIs | |
| Publication status | Published - 2010 |
| MoE publication type | A4 Article in a conference publication |