Fabrication and characterization of IC compatible through-wafer polysilicon interconnects

Ismo Luusua, Kimmo Henttinen, Panu Pekko, Tapani Vehmas

    Research output: Contribution to journalArticle in a proceedings journalScientificpeer-review


    A method for processing IC compatible through-wafer electrical interconnects is presented and characterized with high resistivity substrate PIN diodes to provide a process quality monitoring. Process methods and results are reported and discussed in detail, including ICP deep etching, polysilicon deposition by LPCVD with in-situ boron doping and planarization by grinding and CMP.
    Original languageEnglish
    Pages (from-to)27-31
    JournalECS Transactions
    Issue number25
    Publication statusPublished - 2007
    MoE publication typeA4 Article in a conference publication
    Event209th ECS Meeting: Sensors, Actuators, and Microsystems - Denver, United States
    Duration: 7 May 200712 May 2007


    • Through-Wafer Interconnects
    • Bulk micromachining
    • MEMS


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