Fabrication and characterization of IC compatible through-wafer polysilicon interconnects

Ismo Luusua; Kimmo Henttinen; Panu Pekko; Tapani Vehmas

Fabrication and characterization of IC compatible through-wafer polysilicon interconnects

Ismo Luusua, Kimmo Henttinen, Panu Pekko, Tapani Vehmas

Research output: Contribution to journal › Article in a proceedings journal › Scientific › peer-review

Abstract

A method for processing IC compatible through-wafer electrical interconnects is presented and characterized with high resistivity substrate PIN diodes to provide a process quality monitoring. Process methods and results are reported and discussed in detail, including ICP deep etching, polysilicon deposition by LPCVD with in-situ boron doping and planarization by grinding and CMP.

Original language	English
Pages (from-to)	27-31
Journal	ECS Transactions
Volume	2
Issue number	25
Publication status	Published - 2007
MoE publication type	A4 Article in a conference publication
Event	209th ECS Meeting: Sensors, Actuators, and Microsystems - Denver, United States Duration: 7 May 2007 → 12 May 2007

Keywords

Through-Wafer Interconnects
Bulk micromachining
MEMS

Cite this

@article{96e2661cdb4b4fc7b8f261d7a2199ee0,

title = "Fabrication and characterization of IC compatible through-wafer polysilicon interconnects",

abstract = "A method for processing IC compatible through-wafer electrical interconnects is presented and characterized with high resistivity substrate PIN diodes to provide a process quality monitoring. Process methods and results are reported and discussed in detail, including ICP deep etching, polysilicon deposition by LPCVD with in-situ boron doping and planarization by grinding and CMP.",

keywords = "Through-Wafer Interconnects, Bulk micromachining, MEMS",

author = "Ismo Luusua and Kimmo Henttinen and Panu Pekko and Tapani Vehmas",

year = "2007",

language = "English",

volume = "2",

pages = "27--31",

journal = "ECS Transactions",

issn = "1938-5862",

publisher = "Electrochemical Society ECS",

number = "25",

note = "209th ECS Meeting : Sensors, Actuators, and Microsystems ; Conference date: 07-05-2007 Through 12-05-2007",

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TY - JOUR

T1 - Fabrication and characterization of IC compatible through-wafer polysilicon interconnects

AU - Luusua, Ismo

AU - Henttinen, Kimmo

AU - Pekko, Panu

AU - Vehmas, Tapani

PY - 2007

Y1 - 2007

N2 - A method for processing IC compatible through-wafer electrical interconnects is presented and characterized with high resistivity substrate PIN diodes to provide a process quality monitoring. Process methods and results are reported and discussed in detail, including ICP deep etching, polysilicon deposition by LPCVD with in-situ boron doping and planarization by grinding and CMP.

AB - A method for processing IC compatible through-wafer electrical interconnects is presented and characterized with high resistivity substrate PIN diodes to provide a process quality monitoring. Process methods and results are reported and discussed in detail, including ICP deep etching, polysilicon deposition by LPCVD with in-situ boron doping and planarization by grinding and CMP.

KW - Through-Wafer Interconnects

KW - Bulk micromachining

KW - MEMS

M3 - Article in a proceedings journal

SN - 1938-5862

VL - 2

SP - 27

EP - 31

JO - ECS Transactions

JF - ECS Transactions

IS - 25

T2 - 209th ECS Meeting

Y2 - 7 May 2007 through 12 May 2007

ER -

Fabrication and characterization of IC compatible through-wafer polysilicon interconnects

Abstract

Keywords

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