A method for processing IC compatible through-wafer electrical interconnects is presented and characterized with high resistivity substrate PIN diodes to provide a process quality monitoring. Process methods and results are reported and discussed in detail, including ICP deep etching, polysilicon deposition by LPCVD with in-situ boron doping and planarization by grinding and CMP.
|Publication status||Published - 2007|
|MoE publication type||A4 Article in a conference publication|
|Event||209th ECS Meeting: Sensors, Actuators, and Microsystems - Denver, United States|
Duration: 7 May 2007 → 12 May 2007
- Through-Wafer Interconnects
- Bulk micromachining