Fabrication and characterization of IC compatible through-wafer polysilicon interconnects

Ismo Luusua, Kimmo Henttinen, Panu Pekko, Tapani Vehmas

    Research output: Contribution to journalArticle in a proceedings journalScientific

    Abstract

    A method for processing IC compatible through-wafer electrical interconnects is presented and characterized with high resistivity substrate PIN diodes to provide a process quality monitoring. Process methods and results are reported and discussed in detail, including ICP deep etching, polysilicon deposition by LPCVD with in-situ boron doping and planarization by grinding and CMP.
    Original languageEnglish
    Pages (from-to)27-31
    JournalECS Transactions
    Volume2
    Issue number25
    Publication statusPublished - 2007
    MoE publication typeB3 Non-refereed article in conference proceedings
    Event209th ECS Meeting: Sensors, Actuators, and Microsystems - Denver, United States
    Duration: 7 May 200712 May 2007

    Fingerprint

    Polysilicon
    Boron
    Etching
    Diodes
    Doping (additives)
    Fabrication
    Monitoring
    Substrates
    Processing

    Keywords

    • Through-Wafer Interconnects
    • Bulk micromachining
    • MEMS

    Cite this

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    title = "Fabrication and characterization of IC compatible through-wafer polysilicon interconnects",
    abstract = "A method for processing IC compatible through-wafer electrical interconnects is presented and characterized with high resistivity substrate PIN diodes to provide a process quality monitoring. Process methods and results are reported and discussed in detail, including ICP deep etching, polysilicon deposition by LPCVD with in-situ boron doping and planarization by grinding and CMP.",
    keywords = "Through-Wafer Interconnects, Bulk micromachining, MEMS",
    author = "Ismo Luusua and Kimmo Henttinen and Panu Pekko and Tapani Vehmas",
    year = "2007",
    language = "English",
    volume = "2",
    pages = "27--31",
    journal = "ECS Transactions",
    issn = "1938-5862",
    publisher = "Electrochemical Society ECS",
    number = "25",

    }

    Fabrication and characterization of IC compatible through-wafer polysilicon interconnects. / Luusua, Ismo; Henttinen, Kimmo; Pekko, Panu; Vehmas, Tapani.

    In: ECS Transactions, Vol. 2, No. 25, 2007, p. 27-31.

    Research output: Contribution to journalArticle in a proceedings journalScientific

    TY - JOUR

    T1 - Fabrication and characterization of IC compatible through-wafer polysilicon interconnects

    AU - Luusua, Ismo

    AU - Henttinen, Kimmo

    AU - Pekko, Panu

    AU - Vehmas, Tapani

    PY - 2007

    Y1 - 2007

    N2 - A method for processing IC compatible through-wafer electrical interconnects is presented and characterized with high resistivity substrate PIN diodes to provide a process quality monitoring. Process methods and results are reported and discussed in detail, including ICP deep etching, polysilicon deposition by LPCVD with in-situ boron doping and planarization by grinding and CMP.

    AB - A method for processing IC compatible through-wafer electrical interconnects is presented and characterized with high resistivity substrate PIN diodes to provide a process quality monitoring. Process methods and results are reported and discussed in detail, including ICP deep etching, polysilicon deposition by LPCVD with in-situ boron doping and planarization by grinding and CMP.

    KW - Through-Wafer Interconnects

    KW - Bulk micromachining

    KW - MEMS

    M3 - Article in a proceedings journal

    VL - 2

    SP - 27

    EP - 31

    JO - ECS Transactions

    JF - ECS Transactions

    SN - 1938-5862

    IS - 25

    ER -