Fabrication and characterization of small tunnel junctions through a thin dielectric membrane

A. Aassime; A. J. Manninen; J.P. Pekola

doi:10.1063/1.122463

Fabrication and characterization of small tunnel junctions through a thin dielectric membrane

A. Aassime^*, A. J. Manninen, J.P. Pekola

^*Corresponding author for this work

Not published at VTT

University of Jyväskylä

Research output: Contribution to journal › Article › Scientific › peer-review

2 Citations (Scopus)

Abstract

We show that a small tapered hole through a thin silicon nitride membrane provides a mask for tunnel junction structures. Our experiments imply, unlike in the conventional planar electron beam lithography, that tunnel junctions are well voltage biased in this structure with vanishingly small on-chip impedance. Our technique allows fabrication of double junctions, and even multijunction linear arrays, with small metallic islands in between.

Original language	English
Pages (from-to)	2369-2371
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	16
DOIs	https://doi.org/10.1063/1.122463
Publication status	Published - 1998
MoE publication type	A1 Journal article-refereed

Access to Document

10.1063/1.122463

Cite this

@article{0a4a96ce22604e41a61306550a5136e7,

title = "Fabrication and characterization of small tunnel junctions through a thin dielectric membrane",

abstract = "We show that a small tapered hole through a thin silicon nitride membrane provides a mask for tunnel junction structures. Our experiments imply, unlike in the conventional planar electron beam lithography, that tunnel junctions are well voltage biased in this structure with vanishingly small on-chip impedance. Our technique allows fabrication of double junctions, and even multijunction linear arrays, with small metallic islands in between.",

author = "A. Aassime and Manninen, {A. J.} and J.P. Pekola",

year = "1998",

doi = "10.1063/1.122463",

language = "English",

volume = "73",

pages = "2369--2371",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "16",

}

TY - JOUR

T1 - Fabrication and characterization of small tunnel junctions through a thin dielectric membrane

AU - Aassime, A.

AU - Manninen, A. J.

AU - Pekola, J.P.

PY - 1998

Y1 - 1998

N2 - We show that a small tapered hole through a thin silicon nitride membrane provides a mask for tunnel junction structures. Our experiments imply, unlike in the conventional planar electron beam lithography, that tunnel junctions are well voltage biased in this structure with vanishingly small on-chip impedance. Our technique allows fabrication of double junctions, and even multijunction linear arrays, with small metallic islands in between.

AB - We show that a small tapered hole through a thin silicon nitride membrane provides a mask for tunnel junction structures. Our experiments imply, unlike in the conventional planar electron beam lithography, that tunnel junctions are well voltage biased in this structure with vanishingly small on-chip impedance. Our technique allows fabrication of double junctions, and even multijunction linear arrays, with small metallic islands in between.

UR - http://www.scopus.com/inward/record.url?scp=21944453286&partnerID=8YFLogxK

U2 - 10.1063/1.122463

DO - 10.1063/1.122463

M3 - Article

AN - SCOPUS:21944453286

SN - 0003-6951

VL - 73

SP - 2369

EP - 2371

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

ER -

Fabrication and characterization of small tunnel junctions through a thin dielectric membrane

Abstract

Access to Document

Other files and links

Fingerprint

Cite this