Fabrication and photoluminescence of quantum dots induced by strain of self-organized stressors

Harri Lipsanen, Markku Sopanen, Jouni Ahopelto

Research output: Contribution to journalArticleScientificpeer-review

13 Citations (Scopus)

Abstract

Quantum dots have been fabricated from InGaAs/GaAs quantum wells by growing self-organized InP islands on the surface of the structure. The strain from the island-stressors modifies locally the band edges of the quantum well, forming quantum dots. The deposition conditions of InP are optimized to ensure a narrow size distribution of InP islands with a density of about IO9 cm-2 measured by atomic force microscopy. The lateral strain-induced confinement of carriers produces distinct energy levels as seen in photoluminescence measurements. The ground state transition is redshifted by 64-105 meV from the quantum well peak, depending on the top barrier thickness. Five narrow excited state transitions separated by up to 19 meV are observed between the ground state peak and the quantum well peak at increasing excitation intensity. The narrow linewidth and high photoluminescence efficiency of the dots indicates the very high optical quality of the structure.
Original languageEnglish
Pages (from-to)601-604
Number of pages4
JournalSolid-State Electronics
Volume40
Issue number1-8
DOIs
Publication statusPublished - 1996
MoE publication typeA1 Journal article-refereed

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Semiconductor quantum wells
Semiconductor quantum dots
Photoluminescence
quantum dots
quantum wells
photoluminescence
Fabrication
fabrication
Electron transitions
Ground state
ground state
Excited states
Linewidth
Electron energy levels
excitation
Atomic force microscopy
energy levels
atomic force microscopy

Cite this

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title = "Fabrication and photoluminescence of quantum dots induced by strain of self-organized stressors",
abstract = "Quantum dots have been fabricated from InGaAs/GaAs quantum wells by growing self-organized InP islands on the surface of the structure. The strain from the island-stressors modifies locally the band edges of the quantum well, forming quantum dots. The deposition conditions of InP are optimized to ensure a narrow size distribution of InP islands with a density of about IO9 cm-2 measured by atomic force microscopy. The lateral strain-induced confinement of carriers produces distinct energy levels as seen in photoluminescence measurements. The ground state transition is redshifted by 64-105 meV from the quantum well peak, depending on the top barrier thickness. Five narrow excited state transitions separated by up to 19 meV are observed between the ground state peak and the quantum well peak at increasing excitation intensity. The narrow linewidth and high photoluminescence efficiency of the dots indicates the very high optical quality of the structure.",
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Fabrication and photoluminescence of quantum dots induced by strain of self-organized stressors. / Lipsanen, Harri; Sopanen, Markku; Ahopelto, Jouni.

In: Solid-State Electronics, Vol. 40, No. 1-8, 1996, p. 601-604.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Fabrication and photoluminescence of quantum dots induced by strain of self-organized stressors

AU - Lipsanen, Harri

AU - Sopanen, Markku

AU - Ahopelto, Jouni

PY - 1996

Y1 - 1996

N2 - Quantum dots have been fabricated from InGaAs/GaAs quantum wells by growing self-organized InP islands on the surface of the structure. The strain from the island-stressors modifies locally the band edges of the quantum well, forming quantum dots. The deposition conditions of InP are optimized to ensure a narrow size distribution of InP islands with a density of about IO9 cm-2 measured by atomic force microscopy. The lateral strain-induced confinement of carriers produces distinct energy levels as seen in photoluminescence measurements. The ground state transition is redshifted by 64-105 meV from the quantum well peak, depending on the top barrier thickness. Five narrow excited state transitions separated by up to 19 meV are observed between the ground state peak and the quantum well peak at increasing excitation intensity. The narrow linewidth and high photoluminescence efficiency of the dots indicates the very high optical quality of the structure.

AB - Quantum dots have been fabricated from InGaAs/GaAs quantum wells by growing self-organized InP islands on the surface of the structure. The strain from the island-stressors modifies locally the band edges of the quantum well, forming quantum dots. The deposition conditions of InP are optimized to ensure a narrow size distribution of InP islands with a density of about IO9 cm-2 measured by atomic force microscopy. The lateral strain-induced confinement of carriers produces distinct energy levels as seen in photoluminescence measurements. The ground state transition is redshifted by 64-105 meV from the quantum well peak, depending on the top barrier thickness. Five narrow excited state transitions separated by up to 19 meV are observed between the ground state peak and the quantum well peak at increasing excitation intensity. The narrow linewidth and high photoluminescence efficiency of the dots indicates the very high optical quality of the structure.

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DO - 10.1016/0038-1101(95)00372-X

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