Fabrication and photoluminescence of quantum dots induced by strain of self-organized stressors

Harri Lipsanen, Markku Sopanen, Jouni Ahopelto

    Research output: Contribution to journalArticleScientificpeer-review

    13 Citations (Scopus)

    Abstract

    Quantum dots have been fabricated from InGaAs/GaAs quantum wells by growing self-organized InP islands on the surface of the structure. The strain from the island-stressors modifies locally the band edges of the quantum well, forming quantum dots. The deposition conditions of InP are optimized to ensure a narrow size distribution of InP islands with a density of about IO9 cm-2 measured by atomic force microscopy. The lateral strain-induced confinement of carriers produces distinct energy levels as seen in photoluminescence measurements. The ground state transition is redshifted by 64-105 meV from the quantum well peak, depending on the top barrier thickness. Five narrow excited state transitions separated by up to 19 meV are observed between the ground state peak and the quantum well peak at increasing excitation intensity. The narrow linewidth and high photoluminescence efficiency of the dots indicates the very high optical quality of the structure.
    Original languageEnglish
    Pages (from-to)601-604
    Number of pages4
    JournalSolid-State Electronics
    Volume40
    Issue number1-8
    DOIs
    Publication statusPublished - 1996
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Semiconductor quantum wells
    Semiconductor quantum dots
    Photoluminescence
    quantum dots
    quantum wells
    photoluminescence
    Fabrication
    fabrication
    Electron transitions
    Ground state
    ground state
    Excited states
    Linewidth
    Electron energy levels
    excitation
    Atomic force microscopy
    energy levels
    atomic force microscopy

    Cite this

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    title = "Fabrication and photoluminescence of quantum dots induced by strain of self-organized stressors",
    abstract = "Quantum dots have been fabricated from InGaAs/GaAs quantum wells by growing self-organized InP islands on the surface of the structure. The strain from the island-stressors modifies locally the band edges of the quantum well, forming quantum dots. The deposition conditions of InP are optimized to ensure a narrow size distribution of InP islands with a density of about IO9 cm-2 measured by atomic force microscopy. The lateral strain-induced confinement of carriers produces distinct energy levels as seen in photoluminescence measurements. The ground state transition is redshifted by 64-105 meV from the quantum well peak, depending on the top barrier thickness. Five narrow excited state transitions separated by up to 19 meV are observed between the ground state peak and the quantum well peak at increasing excitation intensity. The narrow linewidth and high photoluminescence efficiency of the dots indicates the very high optical quality of the structure.",
    author = "Harri Lipsanen and Markku Sopanen and Jouni Ahopelto",
    year = "1996",
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    language = "English",
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    pages = "601--604",
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    Fabrication and photoluminescence of quantum dots induced by strain of self-organized stressors. / Lipsanen, Harri; Sopanen, Markku; Ahopelto, Jouni.

    In: Solid-State Electronics, Vol. 40, No. 1-8, 1996, p. 601-604.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Fabrication and photoluminescence of quantum dots induced by strain of self-organized stressors

    AU - Lipsanen, Harri

    AU - Sopanen, Markku

    AU - Ahopelto, Jouni

    PY - 1996

    Y1 - 1996

    N2 - Quantum dots have been fabricated from InGaAs/GaAs quantum wells by growing self-organized InP islands on the surface of the structure. The strain from the island-stressors modifies locally the band edges of the quantum well, forming quantum dots. The deposition conditions of InP are optimized to ensure a narrow size distribution of InP islands with a density of about IO9 cm-2 measured by atomic force microscopy. The lateral strain-induced confinement of carriers produces distinct energy levels as seen in photoluminescence measurements. The ground state transition is redshifted by 64-105 meV from the quantum well peak, depending on the top barrier thickness. Five narrow excited state transitions separated by up to 19 meV are observed between the ground state peak and the quantum well peak at increasing excitation intensity. The narrow linewidth and high photoluminescence efficiency of the dots indicates the very high optical quality of the structure.

    AB - Quantum dots have been fabricated from InGaAs/GaAs quantum wells by growing self-organized InP islands on the surface of the structure. The strain from the island-stressors modifies locally the band edges of the quantum well, forming quantum dots. The deposition conditions of InP are optimized to ensure a narrow size distribution of InP islands with a density of about IO9 cm-2 measured by atomic force microscopy. The lateral strain-induced confinement of carriers produces distinct energy levels as seen in photoluminescence measurements. The ground state transition is redshifted by 64-105 meV from the quantum well peak, depending on the top barrier thickness. Five narrow excited state transitions separated by up to 19 meV are observed between the ground state peak and the quantum well peak at increasing excitation intensity. The narrow linewidth and high photoluminescence efficiency of the dots indicates the very high optical quality of the structure.

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