Abstract
Quantum Hall effect (QHE) devices based on epitaxial
graphene films grown on SiC were fabricated and studied
for development of the QHE resistance standard. The
graphene-metal contacting area in the Hall devices has
been improved and fabricated using a double metallization
process. The tested devices had an initial carrier
concentration of (0.6-10) · ~1011 cm-2 and showed
half-integer QHE at a relatively low (3 T) magnetic
field. The application of the photochemical gating method
and annealing of the sample provides a convenient way for
tuning the carrier density to the optimum value.
Precision measurements of the quantum Hall resistance in
graphene and GaAs devices at moderate magnetic field
strengths (=7 T) showed a relative agreement within
·10-9.
Original language | English |
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Pages (from-to) | 1533-1538 |
Journal | IEEE Transactions on Instrumentation and Measurement |
Volume | 64 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2015 |
MoE publication type | A1 Journal article-refereed |
Keywords
- quantum Hall effect (QHE)
- contact resistance
- epitaxial graphene
- graphene fabrication
- precision measurement