Fabrication and study of large-area QHE devices based on epitaxial graphene

Sergei Novikov, Natalia Lebedeva, Klaus Pierz, Alexandre Satrapinski

Research output: Contribution to journalArticleScientificpeer-review

16 Citations (Scopus)


Quantum Hall effect (QHE) devices based on epitaxial graphene films grown on SiC were fabricated and studied for development of the QHE resistance standard. The graphene-metal contacting area in the Hall devices has been improved and fabricated using a double metallization process. The tested devices had an initial carrier concentration of (0.6-10) · ~1011 cm-2 and showed half-integer QHE at a relatively low (3 T) magnetic field. The application of the photochemical gating method and annealing of the sample provides a convenient way for tuning the carrier density to the optimum value. Precision measurements of the quantum Hall resistance in graphene and GaAs devices at moderate magnetic field strengths (=7 T) showed a relative agreement within ·10-9.
Original languageEnglish
Pages (from-to)1533-1538
JournalIEEE Transactions on Instrumentation and Measurement
Issue number6
Publication statusPublished - 2015
MoE publication typeA1 Journal article-refereed


  • quantum Hall effect (QHE)
  • contact resistance
  • epitaxial graphene
  • graphene fabrication
  • precision measurement


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