Fabrication and study of large-area QHE devices based on epitaxial graphene

Sergei Novikov; Natalia Lebedeva; Klaus Pierz; Alexandre Satrapinski

doi:10.1109/TIM.2014.2385131

Fabrication and study of large-area QHE devices based on epitaxial graphene

Sergei Novikov, Natalia Lebedeva, Klaus Pierz, Alexandre Satrapinski

VTT Technical Research Centre of Finland

Research output: Contribution to journal › Article › Scientific › peer-review

12 Citations (Scopus)

Abstract

Quantum Hall effect (QHE) devices based on epitaxial graphene films grown on SiC were fabricated and studied for development of the QHE resistance standard. The graphene-metal contacting area in the Hall devices has been improved and fabricated using a double metallization process. The tested devices had an initial carrier concentration of (0.6-10) · ~1011 cm-2 and showed half-integer QHE at a relatively low (3 T) magnetic field. The application of the photochemical gating method and annealing of the sample provides a convenient way for tuning the carrier density to the optimum value. Precision measurements of the quantum Hall resistance in graphene and GaAs devices at moderate magnetic field strengths (=7 T) showed a relative agreement within ·10-9.

Original language	English
Pages (from-to)	1533-1538
Journal	IEEE Transactions on Instrumentation and Measurement
Volume	64
Issue number	6
DOIs	https://doi.org/10.1109/TIM.2014.2385131
Publication status	Published - 2015
MoE publication type	A1 Journal article-refereed

Keywords

quantum Hall effect (QHE)
contact resistance
epitaxial graphene
graphene fabrication
precision measurement

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10.1109/TIM.2014.2385131

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@article{ef67a382f209471a9f3c12c49f3bdb3d,

title = "Fabrication and study of large-area QHE devices based on epitaxial graphene",

abstract = "Quantum Hall effect (QHE) devices based on epitaxial graphene films grown on SiC were fabricated and studied for development of the QHE resistance standard. The graphene-metal contacting area in the Hall devices has been improved and fabricated using a double metallization process. The tested devices had an initial carrier concentration of (0.6-10) · ~1011 cm-2 and showed half-integer QHE at a relatively low (3 T) magnetic field. The application of the photochemical gating method and annealing of the sample provides a convenient way for tuning the carrier density to the optimum value. Precision measurements of the quantum Hall resistance in graphene and GaAs devices at moderate magnetic field strengths (=7 T) showed a relative agreement within ·10-9.",

keywords = "quantum Hall effect (QHE), contact resistance, epitaxial graphene, graphene fabrication, precision measurement",

author = "Sergei Novikov and Natalia Lebedeva and Klaus Pierz and Alexandre Satrapinski",

year = "2015",

doi = "10.1109/TIM.2014.2385131",

language = "English",

volume = "64",

pages = "1533--1538",

journal = "IEEE Transactions on Instrumentation and Measurement",

issn = "0018-9456",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

number = "6",

}

TY - JOUR

T1 - Fabrication and study of large-area QHE devices based on epitaxial graphene

AU - Novikov, Sergei

AU - Lebedeva, Natalia

AU - Pierz, Klaus

AU - Satrapinski, Alexandre

PY - 2015

Y1 - 2015

N2 - Quantum Hall effect (QHE) devices based on epitaxial graphene films grown on SiC were fabricated and studied for development of the QHE resistance standard. The graphene-metal contacting area in the Hall devices has been improved and fabricated using a double metallization process. The tested devices had an initial carrier concentration of (0.6-10) · ~1011 cm-2 and showed half-integer QHE at a relatively low (3 T) magnetic field. The application of the photochemical gating method and annealing of the sample provides a convenient way for tuning the carrier density to the optimum value. Precision measurements of the quantum Hall resistance in graphene and GaAs devices at moderate magnetic field strengths (=7 T) showed a relative agreement within ·10-9.

AB - Quantum Hall effect (QHE) devices based on epitaxial graphene films grown on SiC were fabricated and studied for development of the QHE resistance standard. The graphene-metal contacting area in the Hall devices has been improved and fabricated using a double metallization process. The tested devices had an initial carrier concentration of (0.6-10) · ~1011 cm-2 and showed half-integer QHE at a relatively low (3 T) magnetic field. The application of the photochemical gating method and annealing of the sample provides a convenient way for tuning the carrier density to the optimum value. Precision measurements of the quantum Hall resistance in graphene and GaAs devices at moderate magnetic field strengths (=7 T) showed a relative agreement within ·10-9.

KW - quantum Hall effect (QHE)

KW - contact resistance

KW - epitaxial graphene

KW - graphene fabrication

KW - precision measurement

U2 - 10.1109/TIM.2014.2385131

DO - 10.1109/TIM.2014.2385131

M3 - Article

SN - 0018-9456

VL - 64

SP - 1533

EP - 1538

JO - IEEE Transactions on Instrumentation and Measurement

JF - IEEE Transactions on Instrumentation and Measurement

IS - 6

ER -

Fabrication and study of large-area QHE devices based on epitaxial graphene

Abstract

Keywords

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