Fabrication and study of large-area QHE devices based on epitaxial graphene

Sergei Novikov, Natalia Lebedeva, Klaus Pierz, Alexandre Satrapinski

Research output: Contribution to journalArticleScientificpeer-review

11 Citations (Scopus)

Abstract

Quantum Hall effect (QHE) devices based on epitaxial graphene films grown on SiC were fabricated and studied for development of the QHE resistance standard. The graphene-metal contacting area in the Hall devices has been improved and fabricated using a double metallization process. The tested devices had an initial carrier concentration of (0.6-10) · ~1011 cm-2 and showed half-integer QHE at a relatively low (3 T) magnetic field. The application of the photochemical gating method and annealing of the sample provides a convenient way for tuning the carrier density to the optimum value. Precision measurements of the quantum Hall resistance in graphene and GaAs devices at moderate magnetic field strengths (=7 T) showed a relative agreement within ·10-9.
Original languageEnglish
Pages (from-to)1533-1538
JournalIEEE Transactions on Instrumentation and Measurement
Volume64
Issue number6
DOIs
Publication statusPublished - 2015
MoE publication typeA1 Journal article-refereed

Keywords

  • quantum Hall effect (QHE)
  • contact resistance
  • epitaxial graphene
  • graphene fabrication
  • precision measurement

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