Fabrication and study of large area QHE devices based on epitaxial graphene

S. Novikov, N. Lebedeva, Alexandre Satrapinski

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

2 Citations (Scopus)

Abstract

Quantum Hall effect (QHE) devices based on epitaxial graphene films grown on SiC were fabricated and studied for development of QHE resistance standard. The graphene-metal contacting area in the Hall devices has been improved and made using double metallization process. The tested devices has initial carrier concentration of 3 1011 cm-2 and showed half-integer quantum Hall effect at relatively low (4 T) magnetic field.
Original languageEnglish
Title of host publication29th Conference on Precision Electromagnetic Measurements, CPEM 2014
PublisherIEEE Institute of Electrical and Electronic Engineers
Pages32-33
ISBN (Electronic)978-1-4799-2479-0, 978-1-4799-2478-3
ISBN (Print)978-1-4799-5205-2
DOIs
Publication statusPublished - 2 Oct 2014
MoE publication typeNot Eligible
EventConference on Precision Electromagnetic Measurements, CPEM 2014 - Rio de Janeiro, Brazil
Duration: 25 Aug 201429 Aug 2014

Conference

ConferenceConference on Precision Electromagnetic Measurements, CPEM 2014
Abbreviated titleCPEM 2014
CountryBrazil
CityRio de Janeiro
Period25/08/1429/08/14

Keywords

  • precision measurement
  • epitaxial graphene
  • graphene fabrication
  • contact resistance

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    Novikov, S., Lebedeva, N., & Satrapinski, A. (2014). Fabrication and study of large area QHE devices based on epitaxial graphene. In 29th Conference on Precision Electromagnetic Measurements, CPEM 2014 (pp. 32-33). IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/CPEM.2014.6898244