Abstract
| Original language | English |
|---|---|
| Title of host publication | 29th Conference on Precision Electromagnetic Measurements, CPEM 2014 |
| Publisher | IEEE Institute of Electrical and Electronic Engineers |
| Pages | 32-33 |
| ISBN (Electronic) | 978-1-4799-2479-0, 978-1-4799-2478-3 |
| ISBN (Print) | 978-1-4799-5205-2 |
| DOIs | |
| Publication status | Published - 2 Oct 2014 |
| MoE publication type | Not Eligible |
| Event | Conference on Precision Electromagnetic Measurements, CPEM 2014 - Rio de Janeiro, Brazil Duration: 25 Aug 2014 → 29 Aug 2014 |
Conference
| Conference | Conference on Precision Electromagnetic Measurements, CPEM 2014 |
|---|---|
| Abbreviated title | CPEM 2014 |
| Country | Brazil |
| City | Rio de Janeiro |
| Period | 25/08/14 → 29/08/14 |
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Keywords
- precision measurement
- epitaxial graphene
- graphene fabrication
- contact resistance
Cite this
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Fabrication and study of large area QHE devices based on epitaxial graphene. / Novikov, S.; Lebedeva, N.; Satrapinski, Alexandre.
29th Conference on Precision Electromagnetic Measurements, CPEM 2014. IEEE Institute of Electrical and Electronic Engineers , 2014. p. 32-33.Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review
TY - GEN
T1 - Fabrication and study of large area QHE devices based on epitaxial graphene
AU - Novikov, S.
AU - Lebedeva, N.
AU - Satrapinski, Alexandre
PY - 2014/10/2
Y1 - 2014/10/2
N2 - Quantum Hall effect (QHE) devices based on epitaxial graphene films grown on SiC were fabricated and studied for development of QHE resistance standard. The graphene-metal contacting area in the Hall devices has been improved and made using double metallization process. The tested devices has initial carrier concentration of 3 1011 cm-2 and showed half-integer quantum Hall effect at relatively low (4 T) magnetic field.
AB - Quantum Hall effect (QHE) devices based on epitaxial graphene films grown on SiC were fabricated and studied for development of QHE resistance standard. The graphene-metal contacting area in the Hall devices has been improved and made using double metallization process. The tested devices has initial carrier concentration of 3 1011 cm-2 and showed half-integer quantum Hall effect at relatively low (4 T) magnetic field.
KW - precision measurement
KW - epitaxial graphene
KW - graphene fabrication
KW - contact resistance
U2 - 10.1109/CPEM.2014.6898244
DO - 10.1109/CPEM.2014.6898244
M3 - Conference article in proceedings
SN - 978-1-4799-5205-2
SP - 32
EP - 33
BT - 29th Conference on Precision Electromagnetic Measurements, CPEM 2014
PB - IEEE Institute of Electrical and Electronic Engineers
ER -