Abstract
Quantum Hall effect (QHE) devices based on epitaxial graphene films grown on SiC were fabricated and studied for development of QHE resistance standard. The graphene-metal contacting area in the Hall devices has been improved and made using double metallization process. The tested devices has initial carrier concentration of 3 1011 cm-2 and showed half-integer quantum Hall effect at relatively low (4 T) magnetic field.
Original language | English |
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Title of host publication | 29th Conference on Precision Electromagnetic Measurements, CPEM 2014 |
Publisher | IEEE Institute of Electrical and Electronic Engineers |
Pages | 32-33 |
ISBN (Electronic) | 978-1-4799-2479-0, 978-1-4799-2478-3 |
ISBN (Print) | 978-1-4799-5205-2 |
DOIs | |
Publication status | Published - 2 Oct 2014 |
MoE publication type | Not Eligible |
Event | 29th Conference on Precision Electromagnetic Measurements, CPEM 2014 - Rio de Janeiro, Brazil Duration: 24 Aug 2014 → 29 Aug 2014 |
Conference
Conference | 29th Conference on Precision Electromagnetic Measurements, CPEM 2014 |
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Abbreviated title | CPEM 2014 |
Country | Brazil |
City | Rio de Janeiro |
Period | 24/08/14 → 29/08/14 |
Keywords
- precision measurement
- epitaxial graphene
- graphene fabrication
- contact resistance