Fabrication and study of large area QHE devices based on epitaxial graphene

S. Novikov; N. Lebedeva; Alexandre Satrapinski

doi:10.1109/CPEM.2014.6898244

Fabrication and study of large area QHE devices based on epitaxial graphene

S. Novikov, N. Lebedeva, Alexandre Satrapinski

VTT Technical Research Centre of Finland

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

2 Citations (Scopus)

Abstract

Quantum Hall effect (QHE) devices based on epitaxial graphene films grown on SiC were fabricated and studied for development of QHE resistance standard. The graphene-metal contacting area in the Hall devices has been improved and made using double metallization process. The tested devices has initial carrier concentration of 3 10¹¹ cm^-2 and showed half-integer quantum Hall effect at relatively low (4 T) magnetic field.

Original language	English
Title of host publication	29th Conference on Precision Electromagnetic Measurements, CPEM 2014
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	32-33
ISBN (Electronic)	978-1-4799-2479-0, 978-1-4799-2478-3
ISBN (Print)	978-1-4799-5205-2
DOIs	https://doi.org/10.1109/CPEM.2014.6898244
Publication status	Published - 2 Oct 2014
MoE publication type	Not Eligible
Event	Conference on Precision Electromagnetic Measurements, CPEM 2014 - Rio de Janeiro, Brazil Duration: 25 Aug 2014 → 29 Aug 2014

Conference

Conference	Conference on Precision Electromagnetic Measurements, CPEM 2014
Abbreviated title	CPEM 2014
Country	Brazil
City	Rio de Janeiro
Period	25/08/14 → 29/08/14

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Keywords

precision measurement
epitaxial graphene
graphene fabrication
contact resistance

Cite this

Novikov, S., Lebedeva, N., & Satrapinski, A. (2014). Fabrication and study of large area QHE devices based on epitaxial graphene. In 29th Conference on Precision Electromagnetic Measurements, CPEM 2014 (pp. 32-33). IEEE Institute of Electrical and Electronic Engineers . https://doi.org/10.1109/CPEM.2014.6898244

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abstract = "Quantum Hall effect (QHE) devices based on epitaxial graphene films grown on SiC were fabricated and studied for development of QHE resistance standard. The graphene-metal contacting area in the Hall devices has been improved and made using double metallization process. The tested devices has initial carrier concentration of 3 1011 cm-2 and showed half-integer quantum Hall effect at relatively low (4 T) magnetic field.",

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Novikov, S, Lebedeva, N & Satrapinski, A 2014, Fabrication and study of large area QHE devices based on epitaxial graphene. in 29th Conference on Precision Electromagnetic Measurements, CPEM 2014. IEEE Institute of Electrical and Electronic Engineers , pp. 32-33, Conference on Precision Electromagnetic Measurements, CPEM 2014, Rio de Janeiro, Brazil, 25/08/14. https://doi.org/10.1109/CPEM.2014.6898244

Fabrication and study of large area QHE devices based on epitaxial graphene. / Novikov, S.; Lebedeva, N.; Satrapinski, Alexandre.

29th Conference on Precision Electromagnetic Measurements, CPEM 2014. IEEE Institute of Electrical and Electronic Engineers , 2014. p. 32-33.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

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N2 - Quantum Hall effect (QHE) devices based on epitaxial graphene films grown on SiC were fabricated and studied for development of QHE resistance standard. The graphene-metal contacting area in the Hall devices has been improved and made using double metallization process. The tested devices has initial carrier concentration of 3 1011 cm-2 and showed half-integer quantum Hall effect at relatively low (4 T) magnetic field.

AB - Quantum Hall effect (QHE) devices based on epitaxial graphene films grown on SiC were fabricated and studied for development of QHE resistance standard. The graphene-metal contacting area in the Hall devices has been improved and made using double metallization process. The tested devices has initial carrier concentration of 3 1011 cm-2 and showed half-integer quantum Hall effect at relatively low (4 T) magnetic field.

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KW - epitaxial graphene

KW - graphene fabrication

KW - contact resistance

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DO - 10.1109/CPEM.2014.6898244

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Access to Document

10.1109/CPEM.2014.6898244