@inproceedings{58697d93e4d74d57b9a9928723c35dc6,
title = "Fabrication and study of large area QHE devices based on epitaxial graphene",
abstract = "Quantum Hall effect (QHE) devices based on epitaxial graphene films grown on SiC were fabricated and studied for development of QHE resistance standard. The graphene-metal contacting area in the Hall devices has been improved and made using double metallization process. The tested devices has initial carrier concentration of 3 1011 cm-2 and showed half-integer quantum Hall effect at relatively low (4 T) magnetic field.",
keywords = "precision measurement, epitaxial graphene, graphene fabrication, contact resistance",
author = "S. Novikov and N. Lebedeva and Alexandre Satrapinski",
year = "2014",
month = oct,
day = "2",
doi = "10.1109/CPEM.2014.6898244",
language = "English",
isbn = "978-1-4799-5205-2",
series = "CPEM Digest (Conference on Precision Electromagnetic Measurements)",
publisher = "IEEE Institute of Electrical and Electronic Engineers",
pages = "32--33",
booktitle = "29th Conference on Precision Electromagnetic Measurements, CPEM 2014",
address = "United States",
note = "29th Conference on Precision Electromagnetic Measurements, CPEM 2014, CPEM 2014 ; Conference date: 24-08-2014 Through 29-08-2014",
}