Abstract
| Original language | English |
|---|---|
| Title of host publication | Proceedings |
| Subtitle of host publication | 8th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2013 |
| Publisher | Institute of Electrical and Electronic Engineers IEEE |
| Pages | 190-193 |
| ISBN (Print) | 978-1-4799-0667-3 |
| DOIs | |
| Publication status | Published - 2013 |
| MoE publication type | Not Eligible |
| Event | 8th International Microsystems, Packaging, Assembly and Circuits Technology Conference - Green and Cloud: Creating Value and Toward Eco-Life, IMPACT 2013 - Taipei, Taiwan, Province of China Duration: 22 Oct 2013 → 25 Oct 2013 |
Conference
| Conference | 8th International Microsystems, Packaging, Assembly and Circuits Technology Conference - Green and Cloud: Creating Value and Toward Eco-Life, IMPACT 2013 |
|---|---|
| Abbreviated title | IMPACT 2013 |
| Country | Taiwan, Province of China |
| City | Taipei |
| Period | 22/10/13 → 25/10/13 |
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Fabrication, electrical characterization and reliability study of partially electroplated tapered copper through-silicon vias. / Dixit, Pradeep; Viljanen, Heikki; Salonen, Jaakko; Molarius, Jyrki; Monnoyer, Philippe.
Proceedings : 8th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2013. Institute of Electrical and Electronic Engineers IEEE, 2013. p. 190-193.Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review
TY - GEN
T1 - Fabrication, electrical characterization and reliability study of partially electroplated tapered copper through-silicon vias
AU - Dixit, Pradeep
AU - Viljanen, Heikki
AU - Salonen, Jaakko
AU - Molarius, Jyrki
AU - Monnoyer, Philippe
PY - 2013
Y1 - 2013
N2 - The fabrication, electrical characterization and reliability study of copper through-silicon via (TSV) is reported. All the fabrication steps needed in this process have a process temperature = 250°C. The copper TSVs have two distinct features: tapered via profile and partial filling of the vias. Besides the single Kelvin cell TSVs, daisy chains having up to 1400 TSVs were also fabricated and characterized. The measured electrical resistance of a single Kelvin TSV was between 3-10 MO. Later, these partially filled TSVs were subjected to various thermal and electrical cycling tests to study their behavior under different stress conditions. Electrical resistance of these TSVs was found to be stable under these tests; however certain TSV failure were also observed. Preliminary study has shown that via etching and via-filling related defects were the main reasons behind these failures. These cost-effective TSVs were implemented in the wafer level capping of MEMS resonators
AB - The fabrication, electrical characterization and reliability study of copper through-silicon via (TSV) is reported. All the fabrication steps needed in this process have a process temperature = 250°C. The copper TSVs have two distinct features: tapered via profile and partial filling of the vias. Besides the single Kelvin cell TSVs, daisy chains having up to 1400 TSVs were also fabricated and characterized. The measured electrical resistance of a single Kelvin TSV was between 3-10 MO. Later, these partially filled TSVs were subjected to various thermal and electrical cycling tests to study their behavior under different stress conditions. Electrical resistance of these TSVs was found to be stable under these tests; however certain TSV failure were also observed. Preliminary study has shown that via etching and via-filling related defects were the main reasons behind these failures. These cost-effective TSVs were implemented in the wafer level capping of MEMS resonators
U2 - 10.1109/IMPACT.2013.6706634
DO - 10.1109/IMPACT.2013.6706634
M3 - Conference article in proceedings
SN - 978-1-4799-0667-3
SP - 190
EP - 193
BT - Proceedings
PB - Institute of Electrical and Electronic Engineers IEEE
ER -