Fabrication of a thin silicon detector with excellent thickness uniformity

E. Valtonen, T. Eronen, S. Nenonen, H. Andersson, K. Miikkulainen, S. Eränen, Hannu Ronkainen, J. Mäkinen, H. Husu, Antti Lassila, R. Punkkinen, M. Hirvonen

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2 Citations (Scopus)


We have fabricated and tested a thin silicon detector with the specific goal of having a very good thickness uniformity. SOI technology was used in the detector fabrication. The detector was designed to be used as a ΔE detector in a silicon telescope for measuring solar energetic particles in space. The detector thickness was specified to be 20 μm with an rms thickness uniformity of±0.5%. The active area consists of three separate elements, a round centre area and two surrounding annular segments. A new method was developed for measuring the thickness uniformity based on a modified Fizeau interferometer. The thickness uniformity specification was well met with the measured rms thickness variation of 43 nm. The detector was electrically characterized by measuring the I-V and C-V curves and the performance was verified using a 241Am alpha source.

Original languageEnglish
Pages (from-to)27-31
JournalNuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Publication statusPublished - 21 Feb 2016
MoE publication typeA1 Journal article-refereed


  • Fizeau interferometer
  • Silicon detector
  • SOI technology
  • Solar energetic particles
  • Thickness uniformity
  • ΔE-E


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