Fabrication of a thin silicon detector with excellent thickness uniformity

E. Valtonen; T. Eronen; S. Nenonen; H. Andersson; K. Miikkulainen; S. Eränen; Hannu Ronkainen; J. Mäkinen; H. Husu; Antti Lassila; R. Punkkinen; M. Hirvonen

doi:10.1016/j.nima.2015.11.124

Fabrication of a thin silicon detector with excellent thickness uniformity

E. Valtonen^*, T. Eronen, S. Nenonen, H. Andersson, K. Miikkulainen, S. Eränen, Hannu Ronkainen, J. Mäkinen, H. Husu, Antti Lassila, R. Punkkinen, M. Hirvonen

^*Corresponding author for this work

BA6601 Length metrology

Research output: Contribution to journal › Article › Scientific › peer-review

2 Citations (Scopus)

Abstract

We have fabricated and tested a thin silicon detector with the specific goal of having a very good thickness uniformity. SOI technology was used in the detector fabrication. The detector was designed to be used as a ΔE detector in a silicon telescope for measuring solar energetic particles in space. The detector thickness was specified to be 20 μm with an rms thickness uniformity of±0.5%. The active area consists of three separate elements, a round centre area and two surrounding annular segments. A new method was developed for measuring the thickness uniformity based on a modified Fizeau interferometer. The thickness uniformity specification was well met with the measured rms thickness variation of 43 nm. The detector was electrically characterized by measuring the I-V and C-V curves and the performance was verified using a ²⁴¹Am alpha source.

Original language	English
Pages (from-to)	27-31
Journal	Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	810
DOIs	https://doi.org/10.1016/j.nima.2015.11.124
Publication status	Published - 21 Feb 2016
MoE publication type	A1 Journal article-refereed

Keywords

Fizeau interferometer
Silicon detector
SOI technology
Solar energetic particles
Thickness uniformity
ΔE-E

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10.1016/j.nima.2015.11.124

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Valtonen, E., Eronen, T., Nenonen, S., Andersson, H., Miikkulainen, K., Eränen, S., Ronkainen, H., Mäkinen, J., Husu, H., Lassila, A., Punkkinen, R., & Hirvonen, M. (2016). Fabrication of a thin silicon detector with excellent thickness uniformity. Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 810, 27-31. https://doi.org/10.1016/j.nima.2015.11.124

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title = "Fabrication of a thin silicon detector with excellent thickness uniformity",

abstract = "We have fabricated and tested a thin silicon detector with the specific goal of having a very good thickness uniformity. SOI technology was used in the detector fabrication. The detector was designed to be used as a ΔE detector in a silicon telescope for measuring solar energetic particles in space. The detector thickness was specified to be 20 μm with an rms thickness uniformity of±0.5%. The active area consists of three separate elements, a round centre area and two surrounding annular segments. A new method was developed for measuring the thickness uniformity based on a modified Fizeau interferometer. The thickness uniformity specification was well met with the measured rms thickness variation of 43 nm. The detector was electrically characterized by measuring the I-V and C-V curves and the performance was verified using a 241Am alpha source.",

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author = "E. Valtonen and T. Eronen and S. Nenonen and H. Andersson and K. Miikkulainen and S. Er{\"a}nen and Hannu Ronkainen and J. M{\"a}kinen and H. Husu and Antti Lassila and R. Punkkinen and M. Hirvonen",

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Valtonen, E, Eronen, T, Nenonen, S, Andersson, H, Miikkulainen, K, Eränen, S, Ronkainen, H, Mäkinen, J, Husu, H, Lassila, A, Punkkinen, R & Hirvonen, M 2016, 'Fabrication of a thin silicon detector with excellent thickness uniformity', Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 810, pp. 27-31. https://doi.org/10.1016/j.nima.2015.11.124

Fabrication of a thin silicon detector with excellent thickness uniformity. / Valtonen, E.; Eronen, T.; Nenonen, S. et al.
In: Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 810, 21.02.2016, p. 27-31.

Research output: Contribution to journal › Article › Scientific › peer-review

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T1 - Fabrication of a thin silicon detector with excellent thickness uniformity

AU - Valtonen, E.

AU - Eronen, T.

AU - Nenonen, S.

AU - Andersson, H.

AU - Miikkulainen, K.

AU - Eränen, S.

AU - Ronkainen, Hannu

AU - Mäkinen, J.

AU - Husu, H.

AU - Lassila, Antti

AU - Punkkinen, R.

AU - Hirvonen, M.

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N2 - We have fabricated and tested a thin silicon detector with the specific goal of having a very good thickness uniformity. SOI technology was used in the detector fabrication. The detector was designed to be used as a ΔE detector in a silicon telescope for measuring solar energetic particles in space. The detector thickness was specified to be 20 μm with an rms thickness uniformity of±0.5%. The active area consists of three separate elements, a round centre area and two surrounding annular segments. A new method was developed for measuring the thickness uniformity based on a modified Fizeau interferometer. The thickness uniformity specification was well met with the measured rms thickness variation of 43 nm. The detector was electrically characterized by measuring the I-V and C-V curves and the performance was verified using a 241Am alpha source.

AB - We have fabricated and tested a thin silicon detector with the specific goal of having a very good thickness uniformity. SOI technology was used in the detector fabrication. The detector was designed to be used as a ΔE detector in a silicon telescope for measuring solar energetic particles in space. The detector thickness was specified to be 20 μm with an rms thickness uniformity of±0.5%. The active area consists of three separate elements, a round centre area and two surrounding annular segments. A new method was developed for measuring the thickness uniformity based on a modified Fizeau interferometer. The thickness uniformity specification was well met with the measured rms thickness variation of 43 nm. The detector was electrically characterized by measuring the I-V and C-V curves and the performance was verified using a 241Am alpha source.

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KW - Silicon detector

KW - SOI technology

KW - Solar energetic particles

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JF - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

ER -

Fabrication of a thin silicon detector with excellent thickness uniformity

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