Fabrication of a thin silicon detector with excellent thickness uniformity

E. Valtonen; T. Eronen; S. Nenonen; H. Andersson; K. Miikkulainen; S. Eränen; Hannu Ronkainen; J. Mäkinen; H. Husu; Antti Lassila; R. Punkkinen; M. Hirvonen

doi:10.1016/j.nima.2015.11.124

Fabrication of a thin silicon detector with excellent thickness uniformity

E. Valtonen^*
, T. Eronen
, S. Nenonen
, H. Andersson
, K. Miikkulainen
, S. Eränen
, Hannu Ronkainen
, J. Mäkinen
, H. Husu
, Antti Lassila
, R. Punkkinen
, M. Hirvonen

^*Corresponding author for this work

University of Turku
Oxford Instruments Analytical Oy
VTT (former employee or external)
Okmetic Oyj
Centre for Metrology and Accreditation Finland (MIKES)
nLIGHT Corporation
Aboa Space Research Oy

Research output: Contribution to journal › Article › Scientific › peer-review

3 Citations (Scopus)

Abstract

We have fabricated and tested a thin silicon detector with the specific goal of having a very good thickness uniformity. SOI technology was used in the detector fabrication. The detector was designed to be used as a ΔE detector in a silicon telescope for measuring solar energetic particles in space. The detector thickness was specified to be 20 μm with an rms thickness uniformity of±0.5%. The active area consists of three separate elements, a round centre area and two surrounding annular segments. A new method was developed for measuring the thickness uniformity based on a modified Fizeau interferometer. The thickness uniformity specification was well met with the measured rms thickness variation of 43 nm. The detector was electrically characterized by measuring the I-V and C-V curves and the performance was verified using a ²⁴¹Am alpha source.

Original language	English
Pages (from-to)	27-31
Journal	Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	810
DOIs	https://doi.org/10.1016/j.nima.2015.11.124
Publication status	Published - 21 Feb 2016
MoE publication type	A1 Journal article-refereed

Keywords

Fizeau interferometer
Silicon detector
SOI technology
Solar energetic particles
Thickness uniformity
ΔE-E

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10.1016/j.nima.2015.11.124

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Valtonen, E., Eronen, T., Nenonen, S., Andersson, H., Miikkulainen, K., Eränen, S., Ronkainen, H., Mäkinen, J., Husu, H., Lassila, A., Punkkinen, R., & Hirvonen, M. (2016). Fabrication of a thin silicon detector with excellent thickness uniformity. Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 810, 27-31. https://doi.org/10.1016/j.nima.2015.11.124

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title = "Fabrication of a thin silicon detector with excellent thickness uniformity",

abstract = "We have fabricated and tested a thin silicon detector with the specific goal of having a very good thickness uniformity. SOI technology was used in the detector fabrication. The detector was designed to be used as a ΔE detector in a silicon telescope for measuring solar energetic particles in space. The detector thickness was specified to be 20 μm with an rms thickness uniformity of±0.5\%. The active area consists of three separate elements, a round centre area and two surrounding annular segments. A new method was developed for measuring the thickness uniformity based on a modified Fizeau interferometer. The thickness uniformity specification was well met with the measured rms thickness variation of 43 nm. The detector was electrically characterized by measuring the I-V and C-V curves and the performance was verified using a 241Am alpha source.",

keywords = "Fizeau interferometer, Silicon detector, SOI technology, Solar energetic particles, Thickness uniformity, ΔE-E",

author = "E. Valtonen and T. Eronen and S. Nenonen and H. Andersson and K. Miikkulainen and S. Er{\"a}nen and Hannu Ronkainen and J. M{\"a}kinen and H. Husu and Antti Lassila and R. Punkkinen and M. Hirvonen",

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Valtonen, E, Eronen, T, Nenonen, S, Andersson, H, Miikkulainen, K, Eränen, S, Ronkainen, H, Mäkinen, J, Husu, H, Lassila, A, Punkkinen, R & Hirvonen, M 2016, 'Fabrication of a thin silicon detector with excellent thickness uniformity', Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 810, pp. 27-31. https://doi.org/10.1016/j.nima.2015.11.124

Fabrication of a thin silicon detector with excellent thickness uniformity. / Valtonen, E.; Eronen, T.; Nenonen, S. et al.
In: Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 810, 21.02.2016, p. 27-31.

Research output: Contribution to journal › Article › Scientific › peer-review

TY - JOUR

T1 - Fabrication of a thin silicon detector with excellent thickness uniformity

AU - Valtonen, E.

AU - Eronen, T.

AU - Nenonen, S.

AU - Andersson, H.

AU - Miikkulainen, K.

AU - Eränen, S.

AU - Ronkainen, Hannu

AU - Mäkinen, J.

AU - Husu, H.

AU - Lassila, Antti

AU - Punkkinen, R.

AU - Hirvonen, M.

PY - 2016/2/21

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N2 - We have fabricated and tested a thin silicon detector with the specific goal of having a very good thickness uniformity. SOI technology was used in the detector fabrication. The detector was designed to be used as a ΔE detector in a silicon telescope for measuring solar energetic particles in space. The detector thickness was specified to be 20 μm with an rms thickness uniformity of±0.5%. The active area consists of three separate elements, a round centre area and two surrounding annular segments. A new method was developed for measuring the thickness uniformity based on a modified Fizeau interferometer. The thickness uniformity specification was well met with the measured rms thickness variation of 43 nm. The detector was electrically characterized by measuring the I-V and C-V curves and the performance was verified using a 241Am alpha source.

AB - We have fabricated and tested a thin silicon detector with the specific goal of having a very good thickness uniformity. SOI technology was used in the detector fabrication. The detector was designed to be used as a ΔE detector in a silicon telescope for measuring solar energetic particles in space. The detector thickness was specified to be 20 μm with an rms thickness uniformity of±0.5%. The active area consists of three separate elements, a round centre area and two surrounding annular segments. A new method was developed for measuring the thickness uniformity based on a modified Fizeau interferometer. The thickness uniformity specification was well met with the measured rms thickness variation of 43 nm. The detector was electrically characterized by measuring the I-V and C-V curves and the performance was verified using a 241Am alpha source.

KW - Fizeau interferometer

KW - Silicon detector

KW - SOI technology

KW - Solar energetic particles

KW - Thickness uniformity

KW - ΔE-E

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U2 - 10.1016/j.nima.2015.11.124

DO - 10.1016/j.nima.2015.11.124

M3 - Article

AN - SCOPUS:84960917555

SN - 0168-9002

VL - 810

SP - 27

EP - 31

JO - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

ER -

Fabrication of a thin silicon detector with excellent thickness uniformity

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