Fabrication of Bragg grating structures in silicon

Päivi Heimala (Corresponding Author), Timo Aalto, Sanna Yliniemi, Janne Simonen, Markku Kuittinen, Jari Turunen, Matti Leppihalme

Research output: Contribution to journalArticleScientificpeer-review

4 Citations (Scopus)

Abstract

A fabrication process to realise very short period grating structures in silicon has been developed. The period of a first order Bragg grating operating at a wavelength of 1.55 μm is 230 nm. The grating structures have been directly written to PMMA resist using an electron beam pattern generator. The grating pattern in PMMA is transferred into a silicon dioxide masking layer using plasma etching and into silicon using an inductively coupled plasma etching. An etch depth of 0.6 μm has been achieved. The integration of the grating structure with a large core size silicon-on-insulator rib waveguide is presented.
Original languageEnglish
Pages (from-to)92-95
JournalPhysica Scripta: Topical Issues
VolumeT101
DOIs
Publication statusPublished - 2002
MoE publication typeA1 Journal article-refereed

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Bragg Grating
Gratings
Bragg gratings
Fabrication
Silicon
gratings
fabrication
silicon
plasma etching
Etching
Plasma
Silicon-on-insulator
Masking
Electron Beam
masking
Resist
Waveguide
generators
insulators
Generator

Cite this

Heimala, Päivi ; Aalto, Timo ; Yliniemi, Sanna ; Simonen, Janne ; Kuittinen, Markku ; Turunen, Jari ; Leppihalme, Matti. / Fabrication of Bragg grating structures in silicon. In: Physica Scripta: Topical Issues. 2002 ; Vol. T101. pp. 92-95.
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title = "Fabrication of Bragg grating structures in silicon",
abstract = "A fabrication process to realise very short period grating structures in silicon has been developed. The period of a first order Bragg grating operating at a wavelength of 1.55 μm is 230 nm. The grating structures have been directly written to PMMA resist using an electron beam pattern generator. The grating pattern in PMMA is transferred into a silicon dioxide masking layer using plasma etching and into silicon using an inductively coupled plasma etching. An etch depth of 0.6 μm has been achieved. The integration of the grating structure with a large core size silicon-on-insulator rib waveguide is presented.",
author = "P{\"a}ivi Heimala and Timo Aalto and Sanna Yliniemi and Janne Simonen and Markku Kuittinen and Jari Turunen and Matti Leppihalme",
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Heimala, P, Aalto, T, Yliniemi, S, Simonen, J, Kuittinen, M, Turunen, J & Leppihalme, M 2002, 'Fabrication of Bragg grating structures in silicon', Physica Scripta: Topical Issues, vol. T101, pp. 92-95. https://doi.org/10.1238/Physica.Topical.101a00092

Fabrication of Bragg grating structures in silicon. / Heimala, Päivi (Corresponding Author); Aalto, Timo; Yliniemi, Sanna; Simonen, Janne; Kuittinen, Markku; Turunen, Jari; Leppihalme, Matti.

In: Physica Scripta: Topical Issues, Vol. T101, 2002, p. 92-95.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Fabrication of Bragg grating structures in silicon

AU - Heimala, Päivi

AU - Aalto, Timo

AU - Yliniemi, Sanna

AU - Simonen, Janne

AU - Kuittinen, Markku

AU - Turunen, Jari

AU - Leppihalme, Matti

N1 - Project code: E8SU00256

PY - 2002

Y1 - 2002

N2 - A fabrication process to realise very short period grating structures in silicon has been developed. The period of a first order Bragg grating operating at a wavelength of 1.55 μm is 230 nm. The grating structures have been directly written to PMMA resist using an electron beam pattern generator. The grating pattern in PMMA is transferred into a silicon dioxide masking layer using plasma etching and into silicon using an inductively coupled plasma etching. An etch depth of 0.6 μm has been achieved. The integration of the grating structure with a large core size silicon-on-insulator rib waveguide is presented.

AB - A fabrication process to realise very short period grating structures in silicon has been developed. The period of a first order Bragg grating operating at a wavelength of 1.55 μm is 230 nm. The grating structures have been directly written to PMMA resist using an electron beam pattern generator. The grating pattern in PMMA is transferred into a silicon dioxide masking layer using plasma etching and into silicon using an inductively coupled plasma etching. An etch depth of 0.6 μm has been achieved. The integration of the grating structure with a large core size silicon-on-insulator rib waveguide is presented.

U2 - 10.1238/Physica.Topical.101a00092

DO - 10.1238/Physica.Topical.101a00092

M3 - Article

VL - T101

SP - 92

EP - 95

JO - Physica Scripta

JF - Physica Scripta

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