Fabrication of Bragg grating structures in silicon

Päivi Heimala (Corresponding Author), Timo Aalto, Sanna Yliniemi, Janne Simonen, Markku Kuittinen, Jari Turunen, Matti Leppihalme

    Research output: Contribution to journalArticleScientificpeer-review

    5 Citations (Scopus)

    Abstract

    A fabrication process to realise very short period grating structures in silicon has been developed. The period of a first order Bragg grating operating at a wavelength of 1.55 μm is 230 nm. The grating structures have been directly written to PMMA resist using an electron beam pattern generator. The grating pattern in PMMA is transferred into a silicon dioxide masking layer using plasma etching and into silicon using an inductively coupled plasma etching. An etch depth of 0.6 μm has been achieved. The integration of the grating structure with a large core size silicon-on-insulator rib waveguide is presented.
    Original languageEnglish
    Pages (from-to)92-95
    JournalPhysica Scripta: Topical Issues
    VolumeT101
    DOIs
    Publication statusPublished - 2002
    MoE publication typeA1 Journal article-refereed

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