Fabrication of Bragg grating structures in silicon

Päivi Heimala (Corresponding Author), Timo Aalto, Sanna Yliniemi, Janne Simonen, Markku Kuittinen, Jari Turunen, Matti Leppihalme

    Research output: Contribution to journalArticleScientificpeer-review

    4 Citations (Scopus)

    Abstract

    A fabrication process to realise very short period grating structures in silicon has been developed. The period of a first order Bragg grating operating at a wavelength of 1.55 μm is 230 nm. The grating structures have been directly written to PMMA resist using an electron beam pattern generator. The grating pattern in PMMA is transferred into a silicon dioxide masking layer using plasma etching and into silicon using an inductively coupled plasma etching. An etch depth of 0.6 μm has been achieved. The integration of the grating structure with a large core size silicon-on-insulator rib waveguide is presented.
    Original languageEnglish
    Pages (from-to)92-95
    JournalPhysica Scripta: Topical Issues
    VolumeT101
    DOIs
    Publication statusPublished - 2002
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Bragg Grating
    Gratings
    Bragg gratings
    Fabrication
    Silicon
    gratings
    fabrication
    silicon
    plasma etching
    Etching
    Plasma
    Silicon-on-insulator
    Masking
    Electron Beam
    masking
    Resist
    Waveguide
    generators
    insulators
    Generator

    Cite this

    Heimala, Päivi ; Aalto, Timo ; Yliniemi, Sanna ; Simonen, Janne ; Kuittinen, Markku ; Turunen, Jari ; Leppihalme, Matti. / Fabrication of Bragg grating structures in silicon. In: Physica Scripta: Topical Issues. 2002 ; Vol. T101. pp. 92-95.
    @article{043224a72c4c45f1bc344737e19d2f8d,
    title = "Fabrication of Bragg grating structures in silicon",
    abstract = "A fabrication process to realise very short period grating structures in silicon has been developed. The period of a first order Bragg grating operating at a wavelength of 1.55 μm is 230 nm. The grating structures have been directly written to PMMA resist using an electron beam pattern generator. The grating pattern in PMMA is transferred into a silicon dioxide masking layer using plasma etching and into silicon using an inductively coupled plasma etching. An etch depth of 0.6 μm has been achieved. The integration of the grating structure with a large core size silicon-on-insulator rib waveguide is presented.",
    author = "P{\"a}ivi Heimala and Timo Aalto and Sanna Yliniemi and Janne Simonen and Markku Kuittinen and Jari Turunen and Matti Leppihalme",
    note = "Project code: E8SU00256",
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    pages = "92--95",
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    Heimala, P, Aalto, T, Yliniemi, S, Simonen, J, Kuittinen, M, Turunen, J & Leppihalme, M 2002, 'Fabrication of Bragg grating structures in silicon', Physica Scripta: Topical Issues, vol. T101, pp. 92-95. https://doi.org/10.1238/Physica.Topical.101a00092

    Fabrication of Bragg grating structures in silicon. / Heimala, Päivi (Corresponding Author); Aalto, Timo; Yliniemi, Sanna; Simonen, Janne; Kuittinen, Markku; Turunen, Jari; Leppihalme, Matti.

    In: Physica Scripta: Topical Issues, Vol. T101, 2002, p. 92-95.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Fabrication of Bragg grating structures in silicon

    AU - Heimala, Päivi

    AU - Aalto, Timo

    AU - Yliniemi, Sanna

    AU - Simonen, Janne

    AU - Kuittinen, Markku

    AU - Turunen, Jari

    AU - Leppihalme, Matti

    N1 - Project code: E8SU00256

    PY - 2002

    Y1 - 2002

    N2 - A fabrication process to realise very short period grating structures in silicon has been developed. The period of a first order Bragg grating operating at a wavelength of 1.55 μm is 230 nm. The grating structures have been directly written to PMMA resist using an electron beam pattern generator. The grating pattern in PMMA is transferred into a silicon dioxide masking layer using plasma etching and into silicon using an inductively coupled plasma etching. An etch depth of 0.6 μm has been achieved. The integration of the grating structure with a large core size silicon-on-insulator rib waveguide is presented.

    AB - A fabrication process to realise very short period grating structures in silicon has been developed. The period of a first order Bragg grating operating at a wavelength of 1.55 μm is 230 nm. The grating structures have been directly written to PMMA resist using an electron beam pattern generator. The grating pattern in PMMA is transferred into a silicon dioxide masking layer using plasma etching and into silicon using an inductively coupled plasma etching. An etch depth of 0.6 μm has been achieved. The integration of the grating structure with a large core size silicon-on-insulator rib waveguide is presented.

    U2 - 10.1238/Physica.Topical.101a00092

    DO - 10.1238/Physica.Topical.101a00092

    M3 - Article

    VL - T101

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    JO - Physica Scripta

    JF - Physica Scripta

    SN - 0031-8949

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