Fabrication of carbon nanotube-based field-effect transistors for studies of their memory effects

Marina Y. Zavodchikova (Corresponding Author), A. Johansson, M. Rinkiö, J. J. Toppari, A.G. Nasibulin, Esko I. Kauppinen, P. Törmä

Research output: Contribution to journalArticleScientificpeer-review

7 Citations (Scopus)

Abstract

Carbon nanotube‐based field‐effect transistors (CNTFETs) have been fabricated using nanometer thin dielectric material as the gate insulator film. The demonstrated fabrication technique is highly suitable for preparing devices with low contact resistances between the electrodes and the carbon nanotube, down to 14 kΩ. Electronic transport measurements of the fabricated devices have been conducted on more than 70 FETs. Hysteretic behavior in the transfer characteristics of some CNTFETs was observed.
Original languageEnglish
Pages (from-to)4188-4192
JournalPhysica Status Solidi B: Basic Solid State Physics
Volume244
Issue number11
DOIs
Publication statusPublished - 2007
MoE publication typeA1 Journal article-refereed

Fingerprint

Carbon Nanotubes
Field effect transistors
Carbon nanotubes
Transistors
transistors
Carbon
field effect transistors
carbon nanotubes
Data storage equipment
Fabrication
fabrication
carbon
Contact resistance
contact resistance
insulators
Electrodes
electrodes
electronics

Keywords

  • 73.23.-b
  • 73.40.Sx
  • 73.63.Fg
  • 85.30.Tv
  • 85.35.Kt

Cite this

Zavodchikova, M. Y., Johansson, A., Rinkiö, M., Toppari, J. J., Nasibulin, A. G., Kauppinen, E. I., & Törmä, P. (2007). Fabrication of carbon nanotube-based field-effect transistors for studies of their memory effects. Physica Status Solidi B: Basic Solid State Physics, 244(11), 4188-4192. https://doi.org/10.1002/pssb.200776187
Zavodchikova, Marina Y. ; Johansson, A. ; Rinkiö, M. ; Toppari, J. J. ; Nasibulin, A.G. ; Kauppinen, Esko I. ; Törmä, P. / Fabrication of carbon nanotube-based field-effect transistors for studies of their memory effects. In: Physica Status Solidi B: Basic Solid State Physics. 2007 ; Vol. 244, No. 11. pp. 4188-4192.
@article{d286414eb7324024bf4790e405547579,
title = "Fabrication of carbon nanotube-based field-effect transistors for studies of their memory effects",
abstract = "Carbon nanotube‐based field‐effect transistors (CNTFETs) have been fabricated using nanometer thin dielectric material as the gate insulator film. The demonstrated fabrication technique is highly suitable for preparing devices with low contact resistances between the electrodes and the carbon nanotube, down to 14 kΩ. Electronic transport measurements of the fabricated devices have been conducted on more than 70 FETs. Hysteretic behavior in the transfer characteristics of some CNTFETs was observed.",
keywords = "73.23.-b, 73.40.Sx, 73.63.Fg, 85.30.Tv, 85.35.Kt",
author = "Zavodchikova, {Marina Y.} and A. Johansson and M. Rinki{\"o} and Toppari, {J. J.} and A.G. Nasibulin and Kauppinen, {Esko I.} and P. T{\"o}rm{\"a}",
year = "2007",
doi = "10.1002/pssb.200776187",
language = "English",
volume = "244",
pages = "4188--4192",
journal = "Physica Status Solidi B: Basic Solid State Physics",
issn = "0370-1972",
publisher = "Wiley-VCH Verlag",
number = "11",

}

Zavodchikova, MY, Johansson, A, Rinkiö, M, Toppari, JJ, Nasibulin, AG, Kauppinen, EI & Törmä, P 2007, 'Fabrication of carbon nanotube-based field-effect transistors for studies of their memory effects', Physica Status Solidi B: Basic Solid State Physics, vol. 244, no. 11, pp. 4188-4192. https://doi.org/10.1002/pssb.200776187

Fabrication of carbon nanotube-based field-effect transistors for studies of their memory effects. / Zavodchikova, Marina Y. (Corresponding Author); Johansson, A.; Rinkiö, M.; Toppari, J. J.; Nasibulin, A.G.; Kauppinen, Esko I.; Törmä, P.

In: Physica Status Solidi B: Basic Solid State Physics, Vol. 244, No. 11, 2007, p. 4188-4192.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Fabrication of carbon nanotube-based field-effect transistors for studies of their memory effects

AU - Zavodchikova, Marina Y.

AU - Johansson, A.

AU - Rinkiö, M.

AU - Toppari, J. J.

AU - Nasibulin, A.G.

AU - Kauppinen, Esko I.

AU - Törmä, P.

PY - 2007

Y1 - 2007

N2 - Carbon nanotube‐based field‐effect transistors (CNTFETs) have been fabricated using nanometer thin dielectric material as the gate insulator film. The demonstrated fabrication technique is highly suitable for preparing devices with low contact resistances between the electrodes and the carbon nanotube, down to 14 kΩ. Electronic transport measurements of the fabricated devices have been conducted on more than 70 FETs. Hysteretic behavior in the transfer characteristics of some CNTFETs was observed.

AB - Carbon nanotube‐based field‐effect transistors (CNTFETs) have been fabricated using nanometer thin dielectric material as the gate insulator film. The demonstrated fabrication technique is highly suitable for preparing devices with low contact resistances between the electrodes and the carbon nanotube, down to 14 kΩ. Electronic transport measurements of the fabricated devices have been conducted on more than 70 FETs. Hysteretic behavior in the transfer characteristics of some CNTFETs was observed.

KW - 73.23.-b

KW - 73.40.Sx

KW - 73.63.Fg

KW - 85.30.Tv

KW - 85.35.Kt

U2 - 10.1002/pssb.200776187

DO - 10.1002/pssb.200776187

M3 - Article

VL - 244

SP - 4188

EP - 4192

JO - Physica Status Solidi B: Basic Solid State Physics

JF - Physica Status Solidi B: Basic Solid State Physics

SN - 0370-1972

IS - 11

ER -