Fabrication of carbon nanotube-based field-effect transistors for studies of their memory effects

Marina Y. Zavodchikova; A. Johansson; M. Rinkiö; J. J. Toppari; A.G. Nasibulin; Esko I. Kauppinen; P. Törmä

doi:10.1002/pssb.200776187

Fabrication of carbon nanotube-based field-effect transistors for studies of their memory effects

Marina Y. Zavodchikova (Corresponding Author), A. Johansson, M. Rinkiö, J. J. Toppari, A.G. Nasibulin, Esko I. Kauppinen, P. Törmä

VTT Technical Research Centre of Finland

Research output: Contribution to journal › Article › Scientific › peer-review

8 Citations (Scopus)

Abstract

Carbon nanotube‐based field‐effect transistors (CNTFETs) have been fabricated using nanometer thin dielectric material as the gate insulator film. The demonstrated fabrication technique is highly suitable for preparing devices with low contact resistances between the electrodes and the carbon nanotube, down to 14 kΩ. Electronic transport measurements of the fabricated devices have been conducted on more than 70 FETs. Hysteretic behavior in the transfer characteristics of some CNTFETs was observed.

Original language	English
Pages (from-to)	4188-4192
Journal	Physica Status Solidi B: Basic Solid State Physics
Volume	244
Issue number	11
DOIs	https://doi.org/10.1002/pssb.200776187
Publication status	Published - 2007
MoE publication type	A1 Journal article-refereed

Keywords

73.23.-b
73.40.Sx
73.63.Fg
85.30.Tv
85.35.Kt

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10.1002/pssb.200776187

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title = "Fabrication of carbon nanotube-based field-effect transistors for studies of their memory effects",

abstract = "Carbon nanotube‐based field‐effect transistors (CNTFETs) have been fabricated using nanometer thin dielectric material as the gate insulator film. The demonstrated fabrication technique is highly suitable for preparing devices with low contact resistances between the electrodes and the carbon nanotube, down to 14 kΩ. Electronic transport measurements of the fabricated devices have been conducted on more than 70 FETs. Hysteretic behavior in the transfer characteristics of some CNTFETs was observed.",

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author = "Zavodchikova, {Marina Y.} and A. Johansson and M. Rinki{\"o} and Toppari, {J. J.} and A.G. Nasibulin and Kauppinen, {Esko I.} and P. T{\"o}rm{\"a}",

year = "2007",

doi = "10.1002/pssb.200776187",

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T1 - Fabrication of carbon nanotube-based field-effect transistors for studies of their memory effects

AU - Zavodchikova, Marina Y.

AU - Johansson, A.

AU - Rinkiö, M.

AU - Toppari, J. J.

AU - Nasibulin, A.G.

AU - Kauppinen, Esko I.

AU - Törmä, P.

PY - 2007

Y1 - 2007

N2 - Carbon nanotube‐based field‐effect transistors (CNTFETs) have been fabricated using nanometer thin dielectric material as the gate insulator film. The demonstrated fabrication technique is highly suitable for preparing devices with low contact resistances between the electrodes and the carbon nanotube, down to 14 kΩ. Electronic transport measurements of the fabricated devices have been conducted on more than 70 FETs. Hysteretic behavior in the transfer characteristics of some CNTFETs was observed.

AB - Carbon nanotube‐based field‐effect transistors (CNTFETs) have been fabricated using nanometer thin dielectric material as the gate insulator film. The demonstrated fabrication technique is highly suitable for preparing devices with low contact resistances between the electrodes and the carbon nanotube, down to 14 kΩ. Electronic transport measurements of the fabricated devices have been conducted on more than 70 FETs. Hysteretic behavior in the transfer characteristics of some CNTFETs was observed.

KW - 73.23.-b

KW - 73.40.Sx

KW - 73.63.Fg

KW - 85.30.Tv

KW - 85.35.Kt

U2 - 10.1002/pssb.200776187

DO - 10.1002/pssb.200776187

M3 - Article

SN - 0370-1972

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EP - 4192

JO - Physica Status Solidi B: Basic Solid State Physics

JF - Physica Status Solidi B: Basic Solid State Physics

IS - 11

ER -

Fabrication of carbon nanotube-based field-effect transistors for studies of their memory effects

Abstract

Keywords

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