Fabrication of carbon nanotube-based field-effect transistors for studies of their memory effects

Marina Y. Zavodchikova (Corresponding Author), A. Johansson, M. Rinkiö, J. J. Toppari, A.G. Nasibulin, Esko I. Kauppinen, P. Törmä

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Abstract

Carbon nanotube‐based field‐effect transistors (CNTFETs) have been fabricated using nanometer thin dielectric material as the gate insulator film. The demonstrated fabrication technique is highly suitable for preparing devices with low contact resistances between the electrodes and the carbon nanotube, down to 14 kΩ. Electronic transport measurements of the fabricated devices have been conducted on more than 70 FETs. Hysteretic behavior in the transfer characteristics of some CNTFETs was observed.
Original languageEnglish
Pages (from-to)4188-4192
JournalPhysica Status Solidi B: Basic Solid State Physics
Volume244
Issue number11
DOIs
Publication statusPublished - 2007
MoE publication typeA1 Journal article-refereed

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Keywords

  • 73.23.-b
  • 73.40.Sx
  • 73.63.Fg
  • 85.30.Tv
  • 85.35.Kt

Cite this

Zavodchikova, M. Y., Johansson, A., Rinkiö, M., Toppari, J. J., Nasibulin, A. G., Kauppinen, E. I., & Törmä, P. (2007). Fabrication of carbon nanotube-based field-effect transistors for studies of their memory effects. Physica Status Solidi B: Basic Solid State Physics, 244(11), 4188-4192. https://doi.org/10.1002/pssb.200776187