Fabrication of GaInAs Quantum disks using self-organized InP islands as a mask in wet chemical etching

Markku Sopanen, Harri Lipsanen, Jouni Ahopelto

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)

Abstract

GaInAs quantum disks are fabricated by wet chemical etching from a GaInAs/GaAs near‐surface quantum well using self‐organized InP islands as an etch mask. InP islands are formed in coherent Stranski–Krastanow growth mode by metalorganic vapor phase epitaxy. The free‐standing GaInAs/GaAs columns, produced by a three‐step etching process, are overgrown at 550 °C. The luminescence efficiency per emitting area from the regrown quantum disks is one order of magnitude larger than that from a regrown reference quantum well.
Original languageEnglish
Pages (from-to)4029-4031
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number26
DOIs
Publication statusPublished - 1996
MoE publication typeA1 Journal article-refereed

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masks
etching
quantum wells
fabrication
vapor phase epitaxy
luminescence

Cite this

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title = "Fabrication of GaInAs Quantum disks using self-organized InP islands as a mask in wet chemical etching",
abstract = "GaInAs quantum disks are fabricated by wet chemical etching from a GaInAs/GaAs near‐surface quantum well using self‐organized InP islands as an etch mask. InP islands are formed in coherent Stranski–Krastanow growth mode by metalorganic vapor phase epitaxy. The free‐standing GaInAs/GaAs columns, produced by a three‐step etching process, are overgrown at 550 °C. The luminescence efficiency per emitting area from the regrown quantum disks is one order of magnitude larger than that from a regrown reference quantum well.",
author = "Markku Sopanen and Harri Lipsanen and Jouni Ahopelto",
year = "1996",
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journal = "Applied Physics Letters",
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Fabrication of GaInAs Quantum disks using self-organized InP islands as a mask in wet chemical etching. / Sopanen, Markku; Lipsanen, Harri; Ahopelto, Jouni.

In: Applied Physics Letters, Vol. 69, No. 26, 1996, p. 4029-4031.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Fabrication of GaInAs Quantum disks using self-organized InP islands as a mask in wet chemical etching

AU - Sopanen, Markku

AU - Lipsanen, Harri

AU - Ahopelto, Jouni

PY - 1996

Y1 - 1996

N2 - GaInAs quantum disks are fabricated by wet chemical etching from a GaInAs/GaAs near‐surface quantum well using self‐organized InP islands as an etch mask. InP islands are formed in coherent Stranski–Krastanow growth mode by metalorganic vapor phase epitaxy. The free‐standing GaInAs/GaAs columns, produced by a three‐step etching process, are overgrown at 550 °C. The luminescence efficiency per emitting area from the regrown quantum disks is one order of magnitude larger than that from a regrown reference quantum well.

AB - GaInAs quantum disks are fabricated by wet chemical etching from a GaInAs/GaAs near‐surface quantum well using self‐organized InP islands as an etch mask. InP islands are formed in coherent Stranski–Krastanow growth mode by metalorganic vapor phase epitaxy. The free‐standing GaInAs/GaAs columns, produced by a three‐step etching process, are overgrown at 550 °C. The luminescence efficiency per emitting area from the regrown quantum disks is one order of magnitude larger than that from a regrown reference quantum well.

U2 - 10.1063/1.117860

DO - 10.1063/1.117860

M3 - Article

VL - 69

SP - 4029

EP - 4031

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 26

ER -