Abstract
GaInAs quantum disks are fabricated by wet chemical etching from a GaInAs/GaAs near‐surface quantum well using self‐organized InP islands as an etch mask. InP islands are formed in coherent Stranski–Krastanow growth mode by metalorganic vapor phase epitaxy. The free‐standing GaInAs/GaAs columns, produced by a three‐step etching process, are overgrown at 550 °C. The luminescence efficiency per emitting area from the regrown quantum disks is one order of magnitude larger than that from a regrown reference quantum well.
Original language | English |
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Pages (from-to) | 4029-4031 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 69 |
Issue number | 26 |
DOIs | |
Publication status | Published - 1996 |
MoE publication type | A1 Journal article-refereed |