Fabrication of GaInAs Quantum disks using self-organized InP islands as a mask in wet chemical etching

Markku Sopanen, Harri Lipsanen, Jouni Ahopelto

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    Abstract

    GaInAs quantum disks are fabricated by wet chemical etching from a GaInAs/GaAs near‐surface quantum well using self‐organized InP islands as an etch mask. InP islands are formed in coherent Stranski–Krastanow growth mode by metalorganic vapor phase epitaxy. The free‐standing GaInAs/GaAs columns, produced by a three‐step etching process, are overgrown at 550 °C. The luminescence efficiency per emitting area from the regrown quantum disks is one order of magnitude larger than that from a regrown reference quantum well.
    Original languageEnglish
    Pages (from-to)4029-4031
    Number of pages3
    JournalApplied Physics Letters
    Volume69
    Issue number26
    DOIs
    Publication statusPublished - 1996
    MoE publication typeA1 Journal article-refereed

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