Fabrication of GaInAs Quantum disks using self-organized InP islands as a mask in wet chemical etching

Markku Sopanen; Harri Lipsanen; Jouni Ahopelto

doi:10.1063/1.117860

Fabrication of GaInAs Quantum disks using self-organized InP islands as a mask in wet chemical etching

Markku Sopanen
, Harri Lipsanen
, Jouni Ahopelto

Helsinki University of Technology

Research output: Contribution to journal › Article › Scientific › peer-review

1 Citation (Scopus)

Abstract

GaInAs quantum disks are fabricated by wet chemical etching from a GaInAs/GaAs near‐surface quantum well using self‐organized InP islands as an etch mask. InP islands are formed in coherent Stranski–Krastanow growth mode by metalorganic vapor phase epitaxy. The free‐standing GaInAs/GaAs columns, produced by a three‐step etching process, are overgrown at 550 °C. The luminescence efficiency per emitting area from the regrown quantum disks is one order of magnitude larger than that from a regrown reference quantum well.

Original language	English
Pages (from-to)	4029-4031
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	26
DOIs	https://doi.org/10.1063/1.117860
Publication status	Published - 1996
MoE publication type	A1 Journal article-refereed

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title = "Fabrication of GaInAs Quantum disks using self-organized InP islands as a mask in wet chemical etching",

abstract = "GaInAs quantum disks are fabricated by wet chemical etching from a GaInAs/GaAs near‐surface quantum well using self‐organized InP islands as an etch mask. InP islands are formed in coherent Stranski–Krastanow growth mode by metalorganic vapor phase epitaxy. The free‐standing GaInAs/GaAs columns, produced by a three‐step etching process, are overgrown at 550 °C. The luminescence efficiency per emitting area from the regrown quantum disks is one order of magnitude larger than that from a regrown reference quantum well.",

author = "Markku Sopanen and Harri Lipsanen and Jouni Ahopelto",

year = "1996",

doi = "10.1063/1.117860",

language = "English",

volume = "69",

pages = "4029--4031",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics (AIP)",

number = "26",

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T1 - Fabrication of GaInAs Quantum disks using self-organized InP islands as a mask in wet chemical etching

AU - Sopanen, Markku

AU - Lipsanen, Harri

AU - Ahopelto, Jouni

PY - 1996

Y1 - 1996

N2 - GaInAs quantum disks are fabricated by wet chemical etching from a GaInAs/GaAs near‐surface quantum well using self‐organized InP islands as an etch mask. InP islands are formed in coherent Stranski–Krastanow growth mode by metalorganic vapor phase epitaxy. The free‐standing GaInAs/GaAs columns, produced by a three‐step etching process, are overgrown at 550 °C. The luminescence efficiency per emitting area from the regrown quantum disks is one order of magnitude larger than that from a regrown reference quantum well.

AB - GaInAs quantum disks are fabricated by wet chemical etching from a GaInAs/GaAs near‐surface quantum well using self‐organized InP islands as an etch mask. InP islands are formed in coherent Stranski–Krastanow growth mode by metalorganic vapor phase epitaxy. The free‐standing GaInAs/GaAs columns, produced by a three‐step etching process, are overgrown at 550 °C. The luminescence efficiency per emitting area from the regrown quantum disks is one order of magnitude larger than that from a regrown reference quantum well.

U2 - 10.1063/1.117860

DO - 10.1063/1.117860

M3 - Article

SN - 0003-6951

VL - 69

SP - 4029

EP - 4031

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

ER -

Fabrication of GaInAs Quantum disks using self-organized InP islands as a mask in wet chemical etching

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