Abstract
Direct lithographic patterning of lenslet arrays with lens sags up to 75 /spl mu/m and opto-mechanical structures with thickness up to 118 /spl mu/m is demonstrated. using negative tone hybrid glass materials and greyscale and binary photomasks.
The hybrid glass material features a maximum extinction coefficient of 2.0 /spl times/ 10/sup -4/ /spl mu/m/sup -1/ between 450 and 1600 nm, a refractive index of 1.531 at 632.8 nm and an estimated Abbe number of 45.
The patterned structures exhibit rms surface roughness between 10 to 45 nm.
The hybrid glass material features a maximum extinction coefficient of 2.0 /spl times/ 10/sup -4/ /spl mu/m/sup -1/ between 450 and 1600 nm, a refractive index of 1.531 at 632.8 nm and an estimated Abbe number of 45.
The patterned structures exhibit rms surface roughness between 10 to 45 nm.
Original language | English |
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Pages (from-to) | 23-24 |
Journal | Electronics Letters |
Volume | 38 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2002 |
MoE publication type | A1 Journal article-refereed |
Keywords
- nanoimprint lithography