Fabrication of photonic crystal waveguide elements on SOI

Sanna Yliniemi; Timo Aalto; Päivi Heimala; Panu Pekko; Konstantins Jefimovs; Tero Uusitupa

doi:10.1117/12.468303

Fabrication of photonic crystal waveguide elements on SOI

Sanna Yliniemi, Timo Aalto, Päivi Heimala, Panu Pekko, Konstantins Jefimovs, Tero Uusitupa

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

7 Citations (Scopus)

Abstract

Photonic crystal angle elements fabricated in silicon-on-insulator (SOI) are reported. These elements are modelled using three-dimensional finite difference time domain (FDTD) method. Photonic crystals have a two-dimensional trigonal lattice structure with cylindrical air columns. The period of the crystal is approximately 420 nm and the cylinder diameter is about 330 nm. Defect creation is performed by removing air columns from certain lattice sites. The SOI-layer is one micron thick and it also defines the column height. The FDTD modelling results imply that photonic crystal angle elements with lower height do not exhibit proper light transmission at the telecommunications wavelength window, 1550 nm. FDTD modelling results give higher transmission for TE-polarised light than for TM-polarisation. For better light coupling a taper element with widened waveguide end is designed.

Original language	English
Title of host publication	Integrated Optical Devices
Subtitle of host publication	Fabrication and Testing
Editors	Giancarlo C. Righini
Publisher	International Society for Optics and Photonics SPIE
Pages	23-31
ISBN (Print)	978-0-8194-4739-5
DOIs	https://doi.org/10.1117/12.468303
Publication status	Published - 2003
MoE publication type	A4 Article in a conference publication
Event	Photonics Fabrication Europe 2002 (PFE'02) - Bruges, Belgium Duration: 30 Oct 2002 → 1 Nov 2002

Publication series

Series	Proceedings of SPIE
Volume	4944
ISSN	0277-786X

Conference

Conference	Photonics Fabrication Europe 2002 (PFE'02)
Country/Territory	Belgium
City	Bruges
Period	30/10/02 → 1/11/02

Keywords

photonic crystals
silicon-on-insulator
SOI
e-beam
inductively coupled plasma etching
ICP

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10.1117/12.468303

Cite this

@inproceedings{d8f21b5ff48b4e1b9c8e918ac51753a5,

title = "Fabrication of photonic crystal waveguide elements on SOI",

abstract = "Photonic crystal angle elements fabricated in silicon-on-insulator (SOI) are reported. These elements are modelled using three-dimensional finite difference time domain (FDTD) method. Photonic crystals have a two-dimensional trigonal lattice structure with cylindrical air columns. The period of the crystal is approximately 420 nm and the cylinder diameter is about 330 nm. Defect creation is performed by removing air columns from certain lattice sites. The SOI-layer is one micron thick and it also defines the column height. The FDTD modelling results imply that photonic crystal angle elements with lower height do not exhibit proper light transmission at the telecommunications wavelength window, 1550 nm. FDTD modelling results give higher transmission for TE-polarised light than for TM-polarisation. For better light coupling a taper element with widened waveguide end is designed.",

keywords = "photonic crystals, silicon-on-insulator, SOI, e-beam, inductively coupled plasma etching, ICP",

author = "Sanna Yliniemi and Timo Aalto and P{\"a}ivi Heimala and Panu Pekko and Konstantins Jefimovs and Tero Uusitupa",

note = "Project code: T3SU00062; Photonics Fabrication Europe 2002 (PFE'02) ; Conference date: 30-10-2002 Through 01-11-2002",

year = "2003",

doi = "10.1117/12.468303",

language = "English",

isbn = "978-0-8194-4739-5",

series = "Proceedings of SPIE",

publisher = "International Society for Optics and Photonics SPIE",

pages = "23--31",

editor = "Righini, {Giancarlo C.}",

booktitle = "Integrated Optical Devices",

address = "United States",

}

Yliniemi, S, Aalto, T , Heimala, P , Pekko, P, Jefimovs, K & Uusitupa, T 2003, Fabrication of photonic crystal waveguide elements on SOI. in GC Righini (ed.), Integrated Optical Devices: Fabrication and Testing. International Society for Optics and Photonics SPIE, Proceedings of SPIE, vol. 4944, pp. 23-31, Photonics Fabrication Europe 2002 (PFE'02), Bruges, Belgium, 30/10/02. https://doi.org/10.1117/12.468303

Fabrication of photonic crystal waveguide elements on SOI. / Yliniemi, Sanna; Aalto, Timo ; Heimala, Päivi et al.
Integrated Optical Devices: Fabrication and Testing. ed. / Giancarlo C. Righini. International Society for Optics and Photonics SPIE, 2003. p. 23-31 (Proceedings of SPIE, Vol. 4944).

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Fabrication of photonic crystal waveguide elements on SOI

AU - Yliniemi, Sanna

AU - Aalto, Timo

AU - Heimala, Päivi

AU - Pekko, Panu

AU - Jefimovs, Konstantins

AU - Uusitupa, Tero

N1 - Project code: T3SU00062

PY - 2003

Y1 - 2003

N2 - Photonic crystal angle elements fabricated in silicon-on-insulator (SOI) are reported. These elements are modelled using three-dimensional finite difference time domain (FDTD) method. Photonic crystals have a two-dimensional trigonal lattice structure with cylindrical air columns. The period of the crystal is approximately 420 nm and the cylinder diameter is about 330 nm. Defect creation is performed by removing air columns from certain lattice sites. The SOI-layer is one micron thick and it also defines the column height. The FDTD modelling results imply that photonic crystal angle elements with lower height do not exhibit proper light transmission at the telecommunications wavelength window, 1550 nm. FDTD modelling results give higher transmission for TE-polarised light than for TM-polarisation. For better light coupling a taper element with widened waveguide end is designed.

AB - Photonic crystal angle elements fabricated in silicon-on-insulator (SOI) are reported. These elements are modelled using three-dimensional finite difference time domain (FDTD) method. Photonic crystals have a two-dimensional trigonal lattice structure with cylindrical air columns. The period of the crystal is approximately 420 nm and the cylinder diameter is about 330 nm. Defect creation is performed by removing air columns from certain lattice sites. The SOI-layer is one micron thick and it also defines the column height. The FDTD modelling results imply that photonic crystal angle elements with lower height do not exhibit proper light transmission at the telecommunications wavelength window, 1550 nm. FDTD modelling results give higher transmission for TE-polarised light than for TM-polarisation. For better light coupling a taper element with widened waveguide end is designed.

KW - photonic crystals

KW - silicon-on-insulator

KW - SOI

KW - e-beam

KW - inductively coupled plasma etching

KW - ICP

U2 - 10.1117/12.468303

DO - 10.1117/12.468303

M3 - Conference article in proceedings

SN - 978-0-8194-4739-5

T3 - Proceedings of SPIE

SP - 23

EP - 31

BT - Integrated Optical Devices

A2 - Righini, Giancarlo C.

PB - International Society for Optics and Photonics SPIE

T2 - Photonics Fabrication Europe 2002 (PFE'02)

Y2 - 30 October 2002 through 1 November 2002

ER -

Fabrication of photonic crystal waveguide elements on SOI

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