Fabrication of silicon diaphragms by mechanical thinning

Hannu Luoto, Tommi Suni, Kimmo Henttinen, James Dekker

    Research output: Contribution to conferenceConference articleScientific

    Abstract

    In order to allow greater freedom in MEMS designing, there is increasing interest in SOI wafers with buried structures (cavities, different support structures). A fabrication process for such wafers is presented in figure 1. Fabrication of the pre-patterned SOI wafers requires cavity fabrication on one or both of the wafers before bonding. During cavity fabrication, special care should be taken to keep the surfaces smooth and particle free. It should be emphasized that there are a wide range of different MEMS devices. Different MEMS devices place different demands on pre-patterned SOI wafers concerning cavity location (top, bottom or on both wafers), oxide location (top, bottom, both, on cavity), cavity shape and size, possible support structures (number, shape, size, locations), cavity atmosphere etc. Therefore, the fabrication process for pre-processed SOI also depends on the device.
    Original languageEnglish
    Publication statusPublished - 2006
    MoE publication typeNot Eligible
    Event7th international workshop Thin Semiconductor Devices: Forum 2006 - Be-Flexible - Munich, Germany
    Duration: 28 Nov 200629 Nov 2006

    Conference

    Conference7th international workshop Thin Semiconductor Devices
    CountryGermany
    CityMunich
    Period28/11/0629/11/06

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