Fabrication of single crystal silicon resonators with narrow gaps

Jyrki Kiihamäki; Ville Kaajakari; Hannu Luoto; Hannu Kattelus; Marko Ylikoski

doi:10.1109/SENSOR.2005.1497332

Fabrication of single crystal silicon resonators with narrow gaps

Jyrki Kiihamäki, Ville Kaajakari, Hannu Luoto, Hannu Kattelus, Marko Ylikoski

Helsinki University of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

12 Citations (Scopus)

Abstract

This paper reports a novel method for fabrication of micromechanical resonators with very narrow gaps for electrostatic actuation. Vertical 50-180 nm wide gaps are realized using sacrificial etching of oxide sandwiched between APCVD deposited epipoly and patterned single crystal silicon structure layer of SOI wafer.

Original language	English
Title of host publication	The 13th International Conference on Solid-State Sensors, Actuators and Microsystems. TRANSDUCERS '05
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	1354-1357
ISBN (Electronic)	978-0-7803-8995-3
ISBN (Print)	978-0-7803-8994-6
DOIs	https://doi.org/10.1109/SENSOR.2005.1497332
Publication status	Published - 2005
MoE publication type	A4 Article in a conference publication
Event	13th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS '05 - Seoul, Korea, Republic of Duration: 5 Jun 2005 → 9 Jun 2005

Conference

Conference	13th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS '05
Abbreviated title	TRANSDUCERS '05
Country/Territory	Korea, Republic of
City	Seoul
Period	5/06/05 → 9/06/05

Access to Document

10.1109/SENSOR.2005.1497332

Cite this

@inproceedings{f14cd4b1a3cd41e6962e509f7459e3ed,

title = "Fabrication of single crystal silicon resonators with narrow gaps",

abstract = "This paper reports a novel method for fabrication of micromechanical resonators with very narrow gaps for electrostatic actuation. Vertical 50-180 nm wide gaps are realized using sacrificial etching of oxide sandwiched between APCVD deposited epipoly and patterned single crystal silicon structure layer of SOI wafer.",

author = "Jyrki Kiiham{\"a}ki and Ville Kaajakari and Hannu Luoto and Hannu Kattelus and Marko Ylikoski",

year = "2005",

doi = "10.1109/SENSOR.2005.1497332",

language = "English",

isbn = "978-0-7803-8994-6",

pages = "1354--1357",

booktitle = "The 13th International Conference on Solid-State Sensors, Actuators and Microsystems. TRANSDUCERS '05",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

note = "13th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS '05, TRANSDUCERS '05 ; Conference date: 05-06-2005 Through 09-06-2005",

}

Kiihamäki, J, Kaajakari, V, Luoto, H, Kattelus, H & Ylikoski, M 2005, Fabrication of single crystal silicon resonators with narrow gaps. in The 13th International Conference on Solid-State Sensors, Actuators and Microsystems. TRANSDUCERS '05. IEEE Institute of Electrical and Electronic Engineers, pp. 1354-1357, 13th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS '05, Seoul, Korea, Republic of, 5/06/05. https://doi.org/10.1109/SENSOR.2005.1497332

Fabrication of single crystal silicon resonators with narrow gaps. / Kiihamäki, Jyrki; Kaajakari, Ville; Luoto, Hannu et al.
The 13th International Conference on Solid-State Sensors, Actuators and Microsystems. TRANSDUCERS '05. IEEE Institute of Electrical and Electronic Engineers, 2005. p. 1354-1357.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Fabrication of single crystal silicon resonators with narrow gaps

AU - Kiihamäki, Jyrki

AU - Kaajakari, Ville

AU - Luoto, Hannu

AU - Kattelus, Hannu

AU - Ylikoski, Marko

PY - 2005

Y1 - 2005

N2 - This paper reports a novel method for fabrication of micromechanical resonators with very narrow gaps for electrostatic actuation. Vertical 50-180 nm wide gaps are realized using sacrificial etching of oxide sandwiched between APCVD deposited epipoly and patterned single crystal silicon structure layer of SOI wafer.

AB - This paper reports a novel method for fabrication of micromechanical resonators with very narrow gaps for electrostatic actuation. Vertical 50-180 nm wide gaps are realized using sacrificial etching of oxide sandwiched between APCVD deposited epipoly and patterned single crystal silicon structure layer of SOI wafer.

U2 - 10.1109/SENSOR.2005.1497332

DO - 10.1109/SENSOR.2005.1497332

M3 - Conference article in proceedings

SN - 978-0-7803-8994-6

SP - 1354

EP - 1357

BT - The 13th International Conference on Solid-State Sensors, Actuators and Microsystems. TRANSDUCERS '05

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - 13th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS '05

Y2 - 5 June 2005 through 9 June 2005

ER -

Fabrication of single crystal silicon resonators with narrow gaps

Abstract

Conference

Access to Document

Fingerprint

Cite this