A new method for fabrication of reactive ion etching masks for nanoscale GaAs columns is proposed. The mask consists of sub‐100 nm Au islands formed by in situ heating a thin gold film on the substrate surface. The resulting areal density of the Au islands can exceed 1010 cm−2. The islands show good resistance against etching, making the method suitable for fabrication of nanoscale structures with very high aspect ratios. This is demonstrated by etching over 1 μm high GaAs and AlGaAs/GaAs columns with widths below 100 nm.
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 1995|
|MoE publication type||B1 Article in a scientific magazine|
Ahopelto, J., Airaksinen, V., Siren, E., & Niemi, H. (1995). Fabrication of sub-100 nm GaAs columns by reactive ion etching using Au islands as etching mask. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 13(1), 161-162. https://doi.org/10.1116/1.587976