Fabrication of sub-100 nm GaAs columns by reactive ion etching using Au islands as etching mask

Jouni Ahopelto, V. Airaksinen, E. Siren, H. Niemi

Research output: Contribution to journalArticleScientific

6 Citations (Scopus)

Abstract

A new method for fabrication of reactive ion etching masks for nanoscale GaAs columns is proposed. The mask consists of sub‐100 nm Au islands formed by in situ heating a thin gold film on the substrate surface. The resulting areal density of the Au islands can exceed 1010 cm−2. The islands show good resistance against etching, making the method suitable for fabrication of nanoscale structures with very high aspect ratios. This is demonstrated by etching over 1 μm high GaAs and AlGaAs/GaAs columns with widths below 100 nm.
Original languageEnglish
Pages (from-to)161-162
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume13
Issue number1
DOIs
Publication statusPublished - 1995
MoE publication typeB1 Article in a scientific magazine

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masks
etching
fabrication
ions
high aspect ratio
aluminum gallium arsenides
gold
heating

Cite this

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title = "Fabrication of sub-100 nm GaAs columns by reactive ion etching using Au islands as etching mask",
abstract = "A new method for fabrication of reactive ion etching masks for nanoscale GaAs columns is proposed. The mask consists of sub‐100 nm Au islands formed by in situ heating a thin gold film on the substrate surface. The resulting areal density of the Au islands can exceed 1010 cm−2. The islands show good resistance against etching, making the method suitable for fabrication of nanoscale structures with very high aspect ratios. This is demonstrated by etching over 1 μm high GaAs and AlGaAs/GaAs columns with widths below 100 nm.",
author = "Jouni Ahopelto and V. Airaksinen and E. Siren and H. Niemi",
note = "Project code: E5SU00093",
year = "1995",
doi = "10.1116/1.587976",
language = "English",
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pages = "161--162",
journal = "Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics",
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Fabrication of sub-100 nm GaAs columns by reactive ion etching using Au islands as etching mask. / Ahopelto, Jouni; Airaksinen, V.; Siren, E.; Niemi, H.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 13, No. 1, 1995, p. 161-162.

Research output: Contribution to journalArticleScientific

TY - JOUR

T1 - Fabrication of sub-100 nm GaAs columns by reactive ion etching using Au islands as etching mask

AU - Ahopelto, Jouni

AU - Airaksinen, V.

AU - Siren, E.

AU - Niemi, H.

N1 - Project code: E5SU00093

PY - 1995

Y1 - 1995

N2 - A new method for fabrication of reactive ion etching masks for nanoscale GaAs columns is proposed. The mask consists of sub‐100 nm Au islands formed by in situ heating a thin gold film on the substrate surface. The resulting areal density of the Au islands can exceed 1010 cm−2. The islands show good resistance against etching, making the method suitable for fabrication of nanoscale structures with very high aspect ratios. This is demonstrated by etching over 1 μm high GaAs and AlGaAs/GaAs columns with widths below 100 nm.

AB - A new method for fabrication of reactive ion etching masks for nanoscale GaAs columns is proposed. The mask consists of sub‐100 nm Au islands formed by in situ heating a thin gold film on the substrate surface. The resulting areal density of the Au islands can exceed 1010 cm−2. The islands show good resistance against etching, making the method suitable for fabrication of nanoscale structures with very high aspect ratios. This is demonstrated by etching over 1 μm high GaAs and AlGaAs/GaAs columns with widths below 100 nm.

U2 - 10.1116/1.587976

DO - 10.1116/1.587976

M3 - Article

VL - 13

SP - 161

EP - 162

JO - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

SN - 2166-2746

IS - 1

ER -