Fabrication of sub-100 nm GaAs columns by reactive ion etching using Au islands as etching mask

Jouni Ahopelto, V. Airaksinen, E. Siren, H. Niemi

    Research output: Contribution to journalArticleScientific

    6 Citations (Scopus)

    Abstract

    A new method for fabrication of reactive ion etching masks for nanoscale GaAs columns is proposed. The mask consists of sub‐100 nm Au islands formed by in situ heating a thin gold film on the substrate surface. The resulting areal density of the Au islands can exceed 1010 cm−2. The islands show good resistance against etching, making the method suitable for fabrication of nanoscale structures with very high aspect ratios. This is demonstrated by etching over 1 μm high GaAs and AlGaAs/GaAs columns with widths below 100 nm.
    Original languageEnglish
    Pages (from-to)161-162
    JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
    Volume13
    Issue number1
    DOIs
    Publication statusPublished - 1995
    MoE publication typeB1 Article in a scientific magazine

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