Fabrication of sub-100 nm GaAs columns by reactive ion etching using Au islands as etching mask

Jouni Ahopelto; V. Airaksinen; E. Siren; H. Niemi

doi:10.1116/1.587976

Fabrication of sub-100 nm GaAs columns by reactive ion etching using Au islands as etching mask

Jouni Ahopelto, V. Airaksinen, E. Siren, H. Niemi

Research output: Contribution to journal › Article › Scientific

6 Citations (Scopus)

Abstract

A new method for fabrication of reactive ion etching masks for nanoscale GaAs columns is proposed. The mask consists of sub‐100 nm Au islands formed by in situ heating a thin gold film on the substrate surface. The resulting areal density of the Au islands can exceed 1010 cm−2. The islands show good resistance against etching, making the method suitable for fabrication of nanoscale structures with very high aspect ratios. This is demonstrated by etching over 1 μm high GaAs and AlGaAs/GaAs columns with widths below 100 nm.

Original language	English
Pages (from-to)	161-162
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	13
Issue number	1
DOIs	https://doi.org/10.1116/1.587976
Publication status	Published - 1995
MoE publication type	B1 Article in a scientific magazine

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@article{1e228d8244c04578ae0465f49e6fc96a,

title = "Fabrication of sub-100 nm GaAs columns by reactive ion etching using Au islands as etching mask",

abstract = "A new method for fabrication of reactive ion etching masks for nanoscale GaAs columns is proposed. The mask consists of sub‐100 nm Au islands formed by in situ heating a thin gold film on the substrate surface. The resulting areal density of the Au islands can exceed 1010 cm−2. The islands show good resistance against etching, making the method suitable for fabrication of nanoscale structures with very high aspect ratios. This is demonstrated by etching over 1 μm high GaAs and AlGaAs/GaAs columns with widths below 100 nm.",

author = "Jouni Ahopelto and V. Airaksinen and E. Siren and H. Niemi",

note = "Project code: E5SU00093",

year = "1995",

doi = "10.1116/1.587976",

language = "English",

volume = "13",

pages = "161--162",

journal = "Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics",

issn = "2166-2746",

publisher = "AVS Science and Technology Society",

number = "1",

}

TY - JOUR

T1 - Fabrication of sub-100 nm GaAs columns by reactive ion etching using Au islands as etching mask

AU - Ahopelto, Jouni

AU - Airaksinen, V.

AU - Siren, E.

AU - Niemi, H.

N1 - Project code: E5SU00093

PY - 1995

Y1 - 1995

N2 - A new method for fabrication of reactive ion etching masks for nanoscale GaAs columns is proposed. The mask consists of sub‐100 nm Au islands formed by in situ heating a thin gold film on the substrate surface. The resulting areal density of the Au islands can exceed 1010 cm−2. The islands show good resistance against etching, making the method suitable for fabrication of nanoscale structures with very high aspect ratios. This is demonstrated by etching over 1 μm high GaAs and AlGaAs/GaAs columns with widths below 100 nm.

AB - A new method for fabrication of reactive ion etching masks for nanoscale GaAs columns is proposed. The mask consists of sub‐100 nm Au islands formed by in situ heating a thin gold film on the substrate surface. The resulting areal density of the Au islands can exceed 1010 cm−2. The islands show good resistance against etching, making the method suitable for fabrication of nanoscale structures with very high aspect ratios. This is demonstrated by etching over 1 μm high GaAs and AlGaAs/GaAs columns with widths below 100 nm.

U2 - 10.1116/1.587976

DO - 10.1116/1.587976

M3 - Article

VL - 13

SP - 161

EP - 162

JO - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

SN - 2166-2746

IS - 1

ER -