Abstract
A new method for fabrication of reactive ion etching masks for nanoscale GaAs columns is proposed. The mask consists of sub‐100 nm Au islands formed by in situ heating a thin gold film on the substrate surface. The resulting areal density of the Au islands can exceed 1010 cm−2. The islands show good resistance against etching, making the method suitable for fabrication of nanoscale structures with very high aspect ratios. This is demonstrated by etching over 1 μm high GaAs and AlGaAs/GaAs columns with widths below 100 nm.
| Original language | English |
|---|---|
| Pages (from-to) | 161-162 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 13 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1995 |
| MoE publication type | B1 Article in a scientific magazine |
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Cite this
Ahopelto, J., Airaksinen, V., Siren, E., & Niemi, H. (1995). Fabrication of sub-100 nm GaAs columns by reactive ion etching using Au islands as etching mask. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 13(1), 161-162. https://doi.org/10.1116/1.587976