Fabrication of sub-100 nm GaAs columns by reactive ion etching using Au islands as etching mask

Jouni Ahopelto, V. Airaksinen, E. Siren, H. Niemi

    Research output: Contribution to journal › Article › Scientific

    6 Citations (Scopus)

    Abstract

    A new method for fabrication of reactive ion etching masks for nanoscale GaAs columns is proposed. The mask consists of sub‐100 nm Au islands formed by in situ heating a thin gold film on the substrate surface. The resulting areal density of the Au islands can exceed 1010 cm−2. The islands show good resistance against etching, making the method suitable for fabrication of nanoscale structures with very high aspect ratios. This is demonstrated by etching over 1 μm high GaAs and AlGaAs/GaAs columns with widths below 100 nm.
    Original languageEnglish
    Pages (from-to)161-162
    JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
    Volume13
    Issue number1
    DOIs
    Publication statusPublished - 1995
    MoE publication typeB1 Article in a scientific magazine

    Fingerprint

    masks
    etching
    fabrication
    ions
    high aspect ratio
    aluminum gallium arsenides
    gold
    heating

    Cite this

    Ahopelto, Jouni ; Airaksinen, V. ; Siren, E. ; Niemi, H. / Fabrication of sub-100 nm GaAs columns by reactive ion etching using Au islands as etching mask. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1995 ; Vol. 13, No. 1. pp. 161-162.
    @article{1e228d8244c04578ae0465f49e6fc96a,
    title = "Fabrication of sub-100 nm GaAs columns by reactive ion etching using Au islands as etching mask",
    abstract = "A new method for fabrication of reactive ion etching masks for nanoscale GaAs columns is proposed. The mask consists of sub‐100 nm Au islands formed by in situ heating a thin gold film on the substrate surface. The resulting areal density of the Au islands can exceed 1010 cm−2. The islands show good resistance against etching, making the method suitable for fabrication of nanoscale structures with very high aspect ratios. This is demonstrated by etching over 1 μm high GaAs and AlGaAs/GaAs columns with widths below 100 nm.",
    author = "Jouni Ahopelto and V. Airaksinen and E. Siren and H. Niemi",
    note = "Project code: E5SU00093",
    year = "1995",
    doi = "10.1116/1.587976",
    language = "English",
    volume = "13",
    pages = "161--162",
    journal = "Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics",
    issn = "2166-2746",
    publisher = "AVS Science and Technology Society",
    number = "1",

    }

    Ahopelto, J, Airaksinen, V, Siren, E & Niemi, H 1995, 'Fabrication of sub-100 nm GaAs columns by reactive ion etching using Au islands as etching mask', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 13, no. 1, pp. 161-162. https://doi.org/10.1116/1.587976

    Fabrication of sub-100 nm GaAs columns by reactive ion etching using Au islands as etching mask. / Ahopelto, Jouni; Airaksinen, V.; Siren, E.; Niemi, H.

    In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 13, No. 1, 1995, p. 161-162.

    Research output: Contribution to journal › Article › Scientific

    TY - JOUR

    T1 - Fabrication of sub-100 nm GaAs columns by reactive ion etching using Au islands as etching mask

    AU - Ahopelto, Jouni

    AU - Airaksinen, V.

    AU - Siren, E.

    AU - Niemi, H.

    N1 - Project code: E5SU00093

    PY - 1995

    Y1 - 1995

    N2 - A new method for fabrication of reactive ion etching masks for nanoscale GaAs columns is proposed. The mask consists of sub‐100 nm Au islands formed by in situ heating a thin gold film on the substrate surface. The resulting areal density of the Au islands can exceed 1010 cm−2. The islands show good resistance against etching, making the method suitable for fabrication of nanoscale structures with very high aspect ratios. This is demonstrated by etching over 1 μm high GaAs and AlGaAs/GaAs columns with widths below 100 nm.

    AB - A new method for fabrication of reactive ion etching masks for nanoscale GaAs columns is proposed. The mask consists of sub‐100 nm Au islands formed by in situ heating a thin gold film on the substrate surface. The resulting areal density of the Au islands can exceed 1010 cm−2. The islands show good resistance against etching, making the method suitable for fabrication of nanoscale structures with very high aspect ratios. This is demonstrated by etching over 1 μm high GaAs and AlGaAs/GaAs columns with widths below 100 nm.

    U2 - 10.1116/1.587976

    DO - 10.1116/1.587976

    M3 - Article

    VL - 13

    SP - 161

    EP - 162

    JO - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

    JF - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

    SN - 2166-2746

    IS - 1

    ER -

    Ahopelto J, Airaksinen V, Siren E, Niemi H. Fabrication of sub-100 nm GaAs columns by reactive ion etching using Au islands as etching mask. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1995;13(1):161-162. https://doi.org/10.1116/1.587976

    Access to Document